@inproceedings{inproceedings, title  = {{A novel dual gated lateral MOS-bipolar power device}},

 publisher = {{IEEE}},

 url = {{https://doi.org/10.1109/ispsd.1999.764113 }},

 year = {{1999}},

 month = {{1}},

 author = {{Hardikar S and Sankara Narayanan EM and De Souza MM and Huang AQ and Amaratunga G}},

 doi = {{10.1109/ispsd.1999.764113}},

 journal = {{11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)}},

 pages = {{261-264}},

 note = {{Accessed on 2025/11/24}}}