TY  - CONF

T1  - A novel dual gated lateral MOS-bipolar power device

JO  - 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

UR  - https://doi.org/10.1109/ispsd.1999.764113

PY  - 1999/01/01

AU  - Hardikar S

AU  - Sankara Narayanan EM

AU  - De Souza MM

AU  - Huang AQ

AU  - Amaratunga G

ED  - 

DO  - DOI: 10.1109/ispsd.1999.764113

PB  - IEEE

SP  - 261

EP  - 264

Y2  - 2025/11/24

ER  -