@article{article, title  = {{A Gate Driver-Level Isolated Monitoring Technique for Gate Oxide Degradation in Silicon Carbide Power Mosfets}},

 publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}},

 url = {{https://doi.org/10.1109/tpel.2024.3488581 }},

 year = {{2024}},

 month = {{10}},

 author = {{Naghibi J and Mohsenzade S and Mehran K and Foster MP}},

 doi = {{10.1109/tpel.2024.3488581}},

 volume = {{40}},

 journal = {{IEEE Transactions on Power Electronics}},

 issue = {{12}},

 pages = {{18178-18188}},

 note = {{Accessed on 2025/11/23}}}