TY  - JOUR

T1  - A Gate Driver-Level Isolated Monitoring Technique for Gate Oxide Degradation in Silicon Carbide Power Mosfets

JO  - IEEE Transactions on Power Electronics

UR  - https://doi.org/10.1109/tpel.2024.3488581

PY  - 2024/10/30

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Mehran K

AU  - Foster MP

ED  - 

DO  - DOI: 10.1109/tpel.2024.3488581

PB  - Institute of Electrical and Electronics Engineers (IEEE)

VL  - 40

IS  - 12

SP  - 18178

EP  - 18188

Y2  - 2025/11/23

ER  -