TY  - JOUR

T1  - InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator

JO  - Japanese Journal of Applied Physics

UR  - https://doi.org/10.1143/jjap.48.072102

PY  - 2009/07/21

AU  - Tan W-S

AU  - Bousquet V

AU  - Kauer M

AU  - Takahashi K

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1143/jjap.48.072102

PB  - IOP Publishing

VL  - 48

IS  - 7R

SP  - 072102

EP  - 072102

Y2  - 2025/11/25

ER  -