@inproceedings{inproceedings, title  = {{InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product}},

 publisher = {{IEEE}},

 url = {{https://doi.org/10.1109/iciprm.2016.7528782 }},

 year = {{2016}},

 month = {{8}},

 author = {{Zhou X and Xie S and Zhang S and Ng JS and Tan CH}},

 doi = {{10.1109/iciprm.2016.7528782}},

 journal = {{2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)}},

 pages = {{1-2}},

 note = {{Accessed on 2025/11/19}}}