TY  - JOUR

T1  - Modelling the threshold voltage for p-channel E-mode GaN HFETs

JO  - IET Power Electronics

UR  - https://eprints.whiterose.ac.uk/id/eprint/124483

PY  - 2018/04/01

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1049/iet-pel.2017.0438

PB  - Institution of Engineering and Technology

VL  - 11

IS  - 4

Y2  - 2025/12/07

ER  -