@inproceedings{inproceedings, title  = {{Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation}},

 publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}},

 url = {{https://eprints.whiterose.ac.uk/id/eprint/153668 }},

 year = {{2020}},

 month = {{2}},

 author = {{Luo P and Ekkanath Madathil SN and Nishizawa S and Saito W}},

 doi = {{10.1109/IEDM19573.2019.8993596}},

 isbn = {{9781728140339}},

 journal = {{Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM)}},

 pages = {{12.3.1-12.3.4}},

 note = {{Accessed on 2025/11/24}}}