TY  - CONF

T1  - Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation

JO  - Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM)

UR  - https://eprints.whiterose.ac.uk/id/eprint/153668

PY  - 2020/02/13

AU  - Luo P

AU  - Ekkanath Madathil SN

AU  - Nishizawa S

AU  - Saito W

ED  - 

DO  - DOI: 10.1109/IEDM19573.2019.8993596

PB  - Institute of Electrical and Electronics Engineers (IEEE)

SN  - 9781728140339

SP  - 12.3.1

EP  - 12.3.4

Y2  - 2025/11/24

ER  -