TY  - JOUR

T1  - The effect of gold doping on the threshold voltage, Hall mobility, gain, and current noise of M.O.S. transistors†

JO  - International Journal of Electronics

UR  - https://doi.org/10.1080/00207217108900297

PY  - 2007/01/22

AU  - LAMB DR

AU  - MOGHAL GR

AU  - HAWKINS RJ

ED  - 

DO  - DOI: 10.1080/00207217108900297

PB  - Informa UK Limited

VL  - 30

IS  - 2

SP  - 141

EP  - 147

Y2  - 2026/02/04

ER  -