TY  - CONF

T1  - Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

JO  - 2006 IEEE International Symposium on Power Semiconductor Devices & IC's

UR  - https://doi.org/10.1109/ispsd.2006.1666102

PY  - 2006/01/01

AU  - Vershinin K

AU  - Sweet M

AU  - Ngwendson L

AU  - Thomson J

AU  - Waind P

AU  - Bruce J

AU  - Sankara Narayanan EM

ED  - 

DO  - DOI: 10.1109/ispsd.2006.1666102

PB  - IEEE

SP  - 1

EP  - 4

Y2  - 2025/11/24

ER  -