TY  - JOUR

T1  - Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors

JO  - physica status solidi (a)

UR  - https://eprints.whiterose.ac.uk/id/eprint/207128

PY  - 2023/12/27

AU  - Du Y

AU  - Madathil SNE

AU  - Kawai H

AU  - Yagi S

AU  - Narui H

ED  - 

DO  - DOI: 10.1002/pssa.202300199

PB  - Wiley

VL  - 221

IS  - 4

Y2  - 2025/11/24

ER  -