@inproceedings{inproceedings, title  = {{Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage}},

 publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}},

 url = {{https://eprints.whiterose.ac.uk/id/eprint/209946 }},

 year = {{2023}},

 month = {{5}},

 author = {{Betha HV and Odavic M and Atallah K}},

 doi = {{10.1109/apec43580.2023.10131160}},

 isbn = {{9781665475389}},

 journal = {{2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}},

 pages = {{90-95}},

 note = {{Accessed on 2025/11/23}}}