TY  - CONF

T1  - Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage

JO  - 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

UR  - https://eprints.whiterose.ac.uk/id/eprint/209946

PY  - 2023/05/31

AU  - Betha HV

AU  - Odavic M

AU  - Atallah K

ED  - 

DO  - DOI: 10.1109/apec43580.2023.10131160

PB  - Institute of Electrical and Electronics Engineers (IEEE)

SN  - 9781665475389

SP  - 90

EP  - 95

Y2  - 2025/11/23

ER  -