TY  - JOUR

T1  - Excess leakage-current noise in junction field-effect transistors

JO  - Electronics Letters

UR  - https://doi.org/10.1049/el:19700282

PY  - 1970/06/25

AU  - Hawkins RJ

AU  - Bloodworth GG

ED  - 

DO  - DOI: 10.1049/el:19700282

PB  - Institution of Engineering and Technology (IET)

VL  - 6

IS  - 13

SP  - 401

EP  - 403

Y2  - 2026/02/04

ER  -