TY  - JOUR

T1  - A p-channel GaN heterostructure tunnel FET with high ON/OFF current ratio

JO  - IEEE Transactions on Electron Devices

UR  - https://eprints.whiterose.ac.uk/id/eprint/146570

PY  - 2019/07/01

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/ted.2019.2915768

PB  - Institute of Electrical and Electronics Engineers (IEEE)

VL  - 66

IS  - 7

SP  - 2916

EP  - 2922

Y2  - 2025/12/07

ER  -