Centre for GaN Materials and Devices
We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. We are keen to share research insights, build successful partnerships and strengthen links with industry and academia.
The University leads collaboration on development of next generation micro-displays and visible light communication
Professor Tao Wang is leading a £1.9M project in collaboration with American Universities Harvard and MIT and UK Universities Strathclyde and Bath, to advance the technology for the next generation of micro-displays and visible light communication.
New integration concept for microLEDs
A new paper from the Centre for GaN Materials and Devices proposes a different type of integration concept for microLEDs – an epitaxial approach aiming to monolithically integrate μLEDs and high electron mobility transistors on a single chip.
Important developments for visible light communications
A new paper from the Centre for GaN Materials and Devices demonstrates a special approach to on-chip integration of photonics and electronics which has important benefits for visible light communication (VLC) technology.
Major breakthroughs for the fabrication of ultra-small μLEDs with a record efficiency and a record spectral linewidth
There is an increasing demand for developing AR and VR microdisplays with high resolution, high efficiency and zero-cross talk, where ultrasmall, ultrahigh-efficient microLEDs are the key components and are extremely challenging to achieve.