GaN Centre team

Off

Academic staff

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Research Interests:

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Dr Yu Lu

Anhui University of Technology

Research interests:

  • III-nitride based LED and LD
  • HVPE growth of GaN substrate
Dr Qiang Wang

Qilu University of Technology

Research interests:

  • nano/micro fabrication and characterisation of III-nitride based LED
Professor Pallab Bhattacharya
Dr Jayanta Sarma

Research staff

Dr Jie Bai

Ph.D, University of Tokushima, Japan

Research Interests:

  • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
  • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
  • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
  • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.
Dr Suneal Ghataora

PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2019

B.Eng. Electronic and Electrical Engineering, The University of Sheffield

Research interests:

  • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices
Dr Xiangyu He

PhD in Physics, University of Strathclyde 2021

MSc in Science, University of Strathclyde

Research interests:

  • Fabrication and characterization of III-Nitride micro light emitting opto-electronic devices
Dr Kai Huang

PhD in Microelectronics and Solid State Electronics, Nanjing University, China, 2007
BSc in Microelectronics, Nanjing University, China, 2002

Research interests:

  • AlGaN based deep UV optoelectronics
  • plasmonics in III-nitride optoelectronics
Dr Sheng Jiang

PhD in Electronic and Electrical Engineering, the University of Sheffield, UK, 2018
MSc in Electronic and Electrical Engineering, the University of Sheffield, UK, 2013
BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011

Research interests:

  • GaN based high-voltage high-frequency transistors for power switching applications
  • GaN based integrated circuits and systems
Dr Nicolas Poyiatzis

PhD in Electronic and Electrical Engineering, University of Sheffield, 2020
MEng Electrical Engineering, The University of Sheffield

Research interests:

  • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

Support staff

Stephen Atkin
Katherine Greenacre

PhD students 

Mr Philippe Roosvelt Bantsi

MSc Electronic Engineering, Bangor University, UK, 2017
BEng Electronic Engineering, Bangor University, UK, 2016

Research interests:

  • fabrication and characterisation of hybrid organic and inorganic III Nitride based opto-electronic devices (LED and LASER)
  • transfer printing technique for hybrid device fabrication
  • non-radiative energy transfer processes for opto-electronic devices
Mr Si Chen

MEng, Electronic and Electrical Engineering, the University of Sheffield, UK

Research interests:

  • GaN based hybrid microcavity light emitting devices
  • fabrication and characterization of GaAs based photonic devices
Mr Xinchi Chen

MSc in Electronic and Electrical Engineering, University of Sheffield, UK, 2019
BEng in Electronic Engineering, University of Huddersfield, UK, 2018
BEng in Electronic and Information Engineering, Beijing University of Aeronautics and Astronautics (BUAA), Beijing, China, 2017

Research Interests:

  • Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
Mr William Cripps

MSci Experimental Physics, Royal Holloway, University of London, UK
MSc Compound Semiconductor Physics, Cardiff University, UK

Research interests:

  • deterministic nanoscale transfer printing of compound semiconductor nanowires
Mr Volkan Esendag

MEng Electronics and Nanotechnology, University of Leeds

Research interests:

  • Monolithic Integration of Group III-Nitrides on a Si Substrate
Mr Peng Feng

BSc, Applied Physics, Qingdao University of Technology
MSc, Semiconductor Photonics and Electronics, University of Sheffield

Research interests:

  • Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.
Mr Peter Fletcher

Research interests:

  • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
  • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach
Mr Jack Haggar

Research interests:

  • Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.
Mr Zhiheng Lin

MSc, Semiconductor Photonics and Electronics, University of Sheffield

Research Interests:

  • Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
Mr Guillem Martínez de Arriba

Bsc Electronic Engineering for Telecommunications, Autonomous University of Barcelona (UAB), Spain
Msc Electronic and Electrical Engineering, The University of Sheffield

Research Interests:

  • III nitrides materials for HEMT and Microdisk laser devices
Miss Rongzi Ni

BSc, Electronic Science and Technology, Yanshan University (YSU), China
MSc, Semiconductor Photonics and Electronics, The University of Sheffield, UK

Research interests:

  • Monolithic integration of III-nitride micro-emitters
Mr Ye Tian

B.Sc, Electrical Engineering, University of Liverpool
MSc, Semiconductor Photonics and Engineering, University of Sheffield

Research interests:

The growth of nitrogen-polar III-nitride based materials by MOCVD. Investigation of nitrogen-polar nano-membranes using conductive etching approach.

Mr Valerio Trinito

Bsc Electronic Engineering, Sapienza - University of Rome, Italy
Msc Nanotechnologies for ICTs, Polytechnic of Turin, Italy

Research interests:

  • Matlab Modelling
  • Opto-Electronic Devices Simulations
  • III-V Materials Applied to Solar Cells and LEDs
  • Measurement and Characterization of Opto-Electronic Devices
Mr Ce Xu

BSc, Electronic and Electrical Engineering , University of Greenwich
MSc, Electronic and Electrical Engineering, University of Sheffield

Research interests:

  • Growth and characterisation of monolithically integrated III-nitride micro-LED
Mr Xuefei Yang

MSc in Electronics and Electrical Engineering, the University of Sheffield, UK, 2018
BEng in Electronic and Electrical Engineering, University of ZhengZhou(ZZU), ZhengZhou, China, 2016

Research interests:

  • superluminescent Light Emitting Diode with Quantum Dots fabricated by Transfer printing and simulated by FDTD
Mr Xuanming Zhao

Msc Graduate, the University of Sheffield, UK, 2015

Research interests:

  • growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.
Mr Wei Zhong

BEng, Opto-electronic Engineering, Shenzhen University
MSc, Semiconductor Photonics and Electronics, University of Sheffield

Research interests:

  • Growth and fabrication of III-nitride micro-LED based micro-display
Mr Yilun Zhou

MSc, Semiconductor Photonics and Electronics, the University of Sheffield, UK

Research interests:

  • growth and characterisation of III-nitride material by sputtering deposition
Mr Chenqi Zhu

B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
MSc, Electronic and Electrical Engineering, University of Sheffield

Research interests:

  • Monolithic Integration and growth of Group III-Nitrides on Si Substrate