Dr Tom Hayward
Telephone: +44 (0) 114 222 5499
Fax: +44 (0) 114 222 5943
Address: Department of Materials Science and Engineering
Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 3JD
Tom completed his PhD at Sidney Sussex college, the University of Cambridge, in 2007, under the supervision of the late Professor Tony Bland. He subsequently worked in post-doctoral positions both in Cambridge and at the Department of Materials Science and Engineering, University of Sheffield, before being awarded an EPSRC Career Acceleration Fellowship entitled “Magnetism you can rely on: understanding stochastic behaviour in nanomagnetic devices” in July 2011.
Tom’s research is focused on studying the properties of ferromagnetic nanostructures both to gain a better understanding of their fundamental behaviour and to develop new technological applications. His work combines contemporary nano-fabrication techniques such as electron-beam lithography and thin-film deposition with high-sensitivity experimental techniques such as focused Magneto-Optic Kerr Effect (MOKE) magnetometry, Vector Network Analyser Ferromagnetic Resonance measurements (VNA-FMR) and Magnetoresistance (MR) measurements. He also has a strong interest in the simulation of magnetisation dynamics using numerical micromagnetic simulations.
Tom’s previous work has included studies of the properties of magnetic nanowire and nano-ring devices, both exciting candidates for future magnetic memory technologies. He has also developed methods of magnetically tagging probe biomolecules in high throughput biological assays, and ferromagnetic nanostructures capable of trapping and manipulating ultra-cold atoms.
His current research is focused on gaining a comprehensive, quantitative understanding of thermally activated “stochastic” behaviour in ferromagnetic nanostructures, a fundamental problem holding back the realisation of new forms of nanomagnetic technology.
Mr Alex Kirkpattrick