Professor Jo Shien Ng
PhD, BEng
School of Electrical and Electronic Engineering
Professor of Semiconductor Devices
School Director of Research & Innovation
j.s.ng@sheffield.ac.uk
Full contact details
Professor Jo Shien Ng
School of Electrical and Electronic Engineering
School of Electrical and Electronic Engineering
- Profile
-
I received my BEng degree and PhD degrees in electronic engineering from the University of Sheffield, in 1999 and 2003, respectively.
I held a postdoctoral position responsible for III-V material and device characterisation (2003 - 2006) within the EPSRC National Centre for III–V Technologies (now part of EPSRC National Epitaxy Facility).
I became a Royal Society Research Fellow (2006 – 2016) at the same department, before joining the department as Reader in Semiconductor Devices (2016). I was promoted to Professor of Semiconductor Devices in 2017.
My research topics include infrared photodiodes, avalanche photodiodes (APDs), Single Photon Avalanche Diodes (SPADs) and material characterisation on novel avalanche materials. These have received funding from the UK (EPSRC, Innovate UK and STFC) and EU (Horizon 2020 and European Space Agency), with total research grant portfolio of over £4M.I am co-authors of >100 peer-reviewed international journal articles.
- Research interests
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- Avalanche photodiodes (APDs)
- Geiger mode avalanche photodiodes or Single Photon Avalanche Diodes (SPADs)
- High-performance photodetectors for mid-infrared light detection
- Publications
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Journal articles
- Sensitivity improvement of 2.5 Gb/s receivers using AlGaAsSb avalanche photodiodes. Applied Sciences, 15(22). View this article in WRRO
- InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. View this article in WRRO
- Room temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode. IEEE Photonics Journal, 17(2). View this article in WRRO
- Low Excess Noise Al
0.8
In
0.2
As
0.31
Sb
0.69
Avalanche Photodiodes Lattice Matched to InAs. IEEE Transactions on Electron Devices, 1-7.
- Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes. Applied Physics Letters, 125(22). View this article in WRRO
- An extremely low noise-equivalent power photoreceiver using high-gain InGaAs/AlGaAsSb APDs. Journal of Lightwave Technology. View this article in WRRO
- GaAsSb/AlGaAsSb avalanche photodiode with high gain-linearity. IEEE Transactions on Electron Devices, 71(10), 6161-6165. View this article in WRRO
- Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices, 71(5), 3039-3044. View this article in WRRO
- Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 71(3), 1994-1998. View this article in WRRO
- On-chip circularly polarized circular loop antennas utilizing 4H-SiC and GaAs substrates in the Q/V band. Sensors, 24(2). View this article in WRRO
- Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1141. View this article in WRRO
- Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4). View this article in WRRO
Conference proceedings
- InGaAs/AlGaAsSb Avalanche Photodiodes with sub 100fW/√Hz noise equivlent power at 22 to 52 °C. Proceedings of 2025 IEEE 10th Optoelectronics Global Conference (OGC) (pp 121-125). Shenzhen, China, 9 September 2025 - 9 September 2025. View this article in WRRO
- Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
- Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
- Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
- Silicon carbide antenna for polarization agility in constrained environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA) (pp 653-656). Genoa, Italy, 15 November 2023 - 15 November 2023. View this article in WRRO
- Monolithic frequency-reconfigurable antenna on silicon carbide for constrained environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA) (pp 649-652). Genoa, Italy, 15 November 2023 - 15 November 2023. View this article in WRRO
Datasets
- Sensitivity improvement of 2.5 Gb/s receivers using AlGaAsSb avalanche photodiodes. Applied Sciences, 15(22). View this article in WRRO
- Grants
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- AIInP detectors, Commercial, Jul 15 - Apr 16
- Avalanche photodiodes, Commercial, Jul 15 - Jun 16, Co-I
- Linear geiger mode detector technology for time resolved spectral measurements, STFC, Jul 15 - Jun 18, PI
- High-performance photodetectors for mid-infrared light detection, Royal Society, Mar 15 - Feb 17, PI
- Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics, EU H2020, Jan 15 - Jun 18, Co-I
- InAs APD development for NIR & SWIR applications (Extension), European Space Agency, Jan 15 - Jun 15, PI
- Next generation avalanche photodiodes, EPSRC, Apr 13 - Oct 16, Co-I
- Royal Society University Research Fellowship, Royal Society, Apr 13 - Mar 16 , PI
- InAsNSb dilute nitride materials for mid-infrared devices and applications, EPSRC, Sept 12 - Aug 15, Co-I
- InGaAs/InAIAs APDs, Commercial, Jun 14 - Oct 14, PI
- InAs APD development for NIR & SWIR applications, European Space Agency, Jan 13 - Dec 14, Co-I
- InGaAs/InAIAs APDs, Commercial, Dec 12 - Jun 13, PI
- Narrow band APDs for underwater communications, MoD CDE, Apr 12 - Sept 12, Co-I
- High-performance X-ray detectors with sub-100eV energy resolution, EPSRC, Mar 11 - Feb 13, PI
- Novel InAS avalanche photodiodes for photon counting applications, EPSRC, Oct 10 - Sept 13, Co-I
- Knowledge exchange in AIGaAs X-ray detectors, STFC (PIPSS), Dec 09 - Nov 12, PI
- Detector for infrared Algorithmic Spectrometer, EMRS DTC, Apr 09 - Apr 10, Co-I
- Extended Temperature OptoElectronics II (ETOE II), TSB, Oct 08 - Sept 11, Co-I
- Materials for avalanche receiver for ultimate sensitivity (MARISE), EU FP7, May 08 - Jul 11, PI
- New high-performance avalanche photodiodes based on the unique properties of dilute nitrides, EPSRC, May 08 - Jul 10, Co-I
- Detectors for UV non-line-of-sight communication, MoD Col, Nov 07 - Oct 08, Co-I
- 2 Band Quantum Dot Infrared Photodiodes for Mid and Long Wave Infrared Scene Sensing, MoD Col, Nov 07 - Oct 08, Co-I
- Avalanche photodiode array detector for eye-safe 3D imaging, DSTL & STFC, Oct 07 - Sept 09, PI
- Infrared photodiodes based on Type-II Superlattices, EMRS DTC Apr 07 - Mar 10, Co-I
- Royal Society University Research Fellowship, Royal Society, Oct 06 - Mar 13, PI
- Near infrared detectors for LIDAR, European Space Agency, May 06 - Sept 09, Co-I
- Novel low voltage InAs avalanche photodiodes for affordable 2D IR detectors, EMRS DTC, Oct 05 - Dec 05, Co-I
- Secure Communications based on Quantum Cryptography, EU FP6, Apr 04 - Apr 06, Co-I
- High sensitivity avalanche photodiodes for imaging and rangefinding, EMRS DTC, Apr 03 - Mar 05, Co-I
- Teaching activities
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- EEE6217 - Optical Communication Devices and Systems
- Professional activities and memberships
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- Member of IEEE
- Co-founder of Phlux Technology Ltd, UK