Dr Dmitry Revin
School of Electrical and Electronic Engineering
Research Associate in Biophotonics
Semiconductor Materials and Devices Research Group
- Publications
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Journal articles
- Visible-light optical coherence tomography platform for the characterization of the skin barrier. Biomedical Optics Express, 14(8), 3914-3923. View this article in WRRO
- MOVPE-grown quantum cascade laser structures studied by Kelvin probe force microscopy. Crystals, 10(2). View this article in WRRO
- A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm. Quantum Electronics, 48(5), 472-475.
- Active mode locking of quantum cascade lasers in an external ring cavity. Nature Communications, 7, 11440-11440. View this article in WRRO
- Sensitivity Advantage of QCL Tunable-Laser Mid-Infrared Spectroscopy Over FTIR Spectroscopy. Applied Spectroscopy Reviews, 50(10), 822-839. View this article in WRRO
- Continuous wave room temperature external ring cavity quantum cascade laser. Applied Physics Letters, 106(26), 261102-261102. View this article in WRRO
- Artefacts in geometric phase analysis of compound materials. Ultramicroscopy, 157, 91-97.
- Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure. Physica Status Solidi (B) Basic Research, 250(4), 693-697.
- Electrical modulation of the optical properties of mid-infrared metamaterials. Applied Physics Letters, 101(25).
- View this article in WRRO Quantum Cascade Laser with Uni-Lateral Grating. IEEE Photonics Technology Letters, 24, 2112-2112.
- Spectroscopic study of transparency current in mid-infrared quantum cascade lasers. Optics Express, 20(17), 18925-18930.
- Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide. ELECTRONICS LETTERS, 47(21), 1193-1U55.
- InP-Based Midinfrared Quantum Cascade Lasers for Wavelengths Below 4 mu m. IEEE J SEL TOP QUANT, 17(5), 1417-1425.
- Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal-Organic Vapor Phase Epitaxy. IEEE PHOTONIC TECH L, 23(12), 774-776.
- High temperature λ∼4m In
0.7 Ga0.3 As/In0.34 Al0.66 As quantum cascade lasers grown by MOVPE. Electronics Letters, 47(9), 559-561. - Quantum cascade ring lasers: Unidirectional operation and coupled ring tuning. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011.
- InP-Based Midinfrared Quantum Cascade Lasers for Wavelengths Below 4 μm. IEEE Journal on Selected Topics in Quantum Electronics.
- λ ∼ 3.35 μm distributed-feedback quantum-cascade lasers with high-aspect-ratio lateral grating. IEEE Photonics Technology Letters, 23(7), 420-422.
- High peak power lambda similar to 3.3 and 3.5 mu m InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K. APPL PHYS LETT, 97(3).
- High-peak-power room-temperature λ ∼ 3.6 μm inGaAsAlAs(Sb) quantum cascade lasers. IEEE Photonics Technology Letters, 22(11), 757-759.
- Room temperature lambda similar to 3.3 mu m InP-based InGaAs/AlAs(Sb) quantum cascade lasers. ELECTRON LETT, 46(6), 439-U84.
- λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating. Applied Physics Letters, 97(11).
- A unidirectional quantum cascade ring laser. Applied Physics Letters, 97(23).
- Transmission properties of plasmonic metamaterial quantum cascade lasers. IEEE Photonics Technology Letters, 22(16), 1217-1219.
- Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at λ=3.3 μm. IEEE Photonics Technology Letters, 22(17), 1273-1275.
- Probing diagonal laser transitions in InGaAs/AlInAs/InP quantum cascade lasers. J APPL PHYS, 106(12).
- High performance, high temperature lambda approximate to 3.7 mu m InGaAs/AlAs(Sb) quantum cascade lasers. APPL PHYS LETT, 95(11).
- Characterization of Quantum-Cascade Lasers Using Single-Pass Transmission Spectroscopy. IEEE J QUANTUM ELECT, 45(5-6), 586-593.
- lambda similar to 3.1 mu m room temperature InGaAs/AlAsSb/InP quantum cascade lasers. APPL PHYS LETT, 94(3).
- Short wavelength distributed feedback quantum cascade laser. Optics InfoBase Conference Papers.
- Single grating period quantum cascade laser array with broad wavelength tuning range. ELECTRON LETT, 44(22), 1306-U28.
- Dispersive gain and loss in midinfrared quantum cascade laser. APPL PHYS LETT, 92(8).
- Waveguide optical losses in InGaAs/AlAsSb quantum cascade laser. J APPL PHYS, 103(4).
- Fingerprints of spatial charge transfer in quantum cascade lasers. J APPL PHYS, 102(11).
- Relaxation and dephasing of the intersubband transitions in n-type InAs/AlSb multi quantum wells. APPL PHYS LETT, 91(7).
- Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. APPL PHYS LETT, 91(5).
- InGaAs/AlAsSb/InP strain compensated quantum cascade lasers. APPL PHYS LETT, 90(15).
- Fabrication and characterization of InP-based quantum cascade distributed feedback lasers with inductively coupled plasma etched lateral gratings. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2424-2428.
- InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 mu m. APPL PHYS LETT, 90(2).
- InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
- μ-probe photoluminescence study of mid-IR quantum cascade lasers based on antimonide ternary and quaternary barriers. Journal of Nanophotonics, 1(1).
- Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window. Proceedings of SPIE - The International Society for Optical Engineering, 6485.
- High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings. APPL PHYS LETT, 89(20).
- Intersubband spectroscopy of quantum cascade lasers under operating conditions. APPL PHYS LETT, 88(13).
- Broadband 6 μm<λ<8 μm superluminescent quantum cascade light-emitting diodes. Applied Physics Letters, 88(12).
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers. J APPL PHYS, 98(8).
- Pulsed operation of long-wavelength (λ ≃ 11.3 μm) MOVPE-grown quantum cascade lasers up to 350 K. Electronics Letters, 41(21), 1175-1176.
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy. APPL PHYS LETT, 85(23), 5529-5531.
- InGaAs/AlAsSb quantum cascade lasers. APPL PHYS LETT, 85(18), 3992-3994.
- Room temperature operation of InAs/AlSb quantum cascade lasers. APPL PHYS LETT, 85(2), 167-169.
- InGaAs-AlAsSb quantum cascade structures emitting at 3.1 mu m. ELECTRON LETT, 40(14), 874-875.
- Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations. J APPL PHYS, 95(12), 7584-7587.
- λ∼4-5.3 μm Intersubband emission from InGaAs- AiAsSb quantum cascade structures. Applied Physics Letters, 84(9), 1447-1449.
- Time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric quantum wells. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 68(1), 58-61.
- Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy. APPL PHYS LETT, 83(10), 1921-1922.
- Quantum cascade lasers grown by metalorganic vapor phase epitaxy. APPL PHYS LETT, 82(24), 4221-4223.
- Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells. Proceedings of SPIE - The International Society for Optical Engineering, 5023, 209-212.
- Optical phenomena in InGaAs/AlGaAs quantum wells and quantum dots. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 67(2), 193-197.
- Intervalley scattering in GaAs-AlAs quantum cascade lasers. APPL PHYS LETT, 81(8), 1378-1380.
1-x Nx grown on GaAs by MOVPE. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 66(2), 193-196.
Optical and electrophysical properties of epitaxial layers GaAs- Investigation of hot electron distribution by interband transmittance in n-type InGaAs/GaAs MQW heterostructures. Physics of Low-Dimensional Structures, 1-2, 203-210.
2 :Nc-Si. Materials Research Society Symposium - Proceedings, 692, 607-613.
The influence of annealing temperature and doping on the red/near-infrared luminescence of ion implanted SiO- The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO
2 matrix. Surface and Coatings Technology, 158-159, 717-719. - Photoluminescence of nanosrtructured system of a-Si with c-Si nanoinclusions produced by method of monocrystalline silicon irradiation with heavy ions. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 65(2), 292-294.
- Toward far and mid IR intraband lasers based on hot carrier intervalley/real space transfer in multiple quantum well systems. Proceedings of SPIE-The International Society for Optical Engineering, 4318, 192-203.
- Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: Determination and analysis. Proceedings of SPIE - The International Society for Optical Engineering, 4415, 104-109.
- Photoluminescence of SiO
2 and α-Si with silicon nanoinclusions. Proceedings of SPIE-The International Society for Optical Engineering, 4318, 31-35. - Combined probe microscope with resonance piezoelectrical sensor of force of probe-sample surface interaction. Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya(2), 98-102.
- Influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO
2 with Si nanoinclusions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 174(1-2), 123-129. - Experimental determination of the energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 161-164.
- Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure. Semiconductor Science and Technology, 15(11), 1049-1053.
- Enhancement of luminescence in ion implanted Si quantum dots in SiO
2 matrix by means of dose alignment and doping. Nanotechnology, 11(4), 295-297. 2 matrix by means of dose aligment and doping. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 315-317.
The enhancement of luminescence in ion implanted Si quantum dots in SiO- Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field. Semiconductors, 34(9), 1073-1078.
- Far infrared emission and population inversion of hot holes in MQW InGaAs/GaAs heterostructures under real space transfer. Materials Science Forum, 297-298, 261-264.
- Hot electron intervalley transfer in GaAs-AlAs MQWs: Population inversion and possibility of intraband lasing. Physica B: Condensed Matter, 272(1-4), 139-142.
- Optical phenomena under hole heating and real space transfer in p-type InGaAs/GaAs MQW heterostructures. Materials Science Forum, 297-298, 37-40.
- Scanning combined near-field optical tunneling microscope. Instruments and Experimental Techniques, 41(2), 269-274.
- Characterization of GaAs/In
x Ga1-x As quantum-dot heterostructures by electrical and optical methods. Semiconductors, 32(1), 99-104. - Near field optical microscope for the investigation and modification of surface properties. Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 14(2), 189-193.
- Scanning combined near-field optical tunneling microscope. Pribory i Tekhnika Eksperimenta, 41(2), 132-137.
- Far-infrared emission and possibility of population inversion of hot holes in MQW InGaAs/GaAs heterostructures under real space transfer. Physica B: Condensed Matter, 249-251, 971-975.
- Investigation of the photoluminescence and modification of InGaP/GaAs/InGaAs heterostructures by near-field scanning microscopy. Technical Physics Letters, 23(8), 624-625.
- Far infrared emission and absorption (amplification) under real space transfer and population inversion in shallow multi-quantum-wells. Physica Status Solidi (B) Basic Research, 204(1), 563-565.
- Photoluminescence from InGaAs/GaAs MQW heterostructures under real space transfer. Physica Status Solidi (B) Basic Research, 204(1), 184-186.
- Porous gallium arsenide. Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 12(5), 585-589.
- IR radiation from hot holes in MQW InGaAs/GaAs heterostructures under real space transfer. Physica Status Solidi (B) Basic Research, 204(1), 178-180.
- Structure and properties of porous GaAs. Proceedings of SPIE - The International Society for Optical Engineering, 2777, 43-52.
- Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells. JETP Letters, 64(7), 520-524.
- Narrowing of photoluminescence line from single quantum well under high excitation levels. Materials Science Forum, 173-174, 227-230.
- Fast-sweeping continuous wave quantum cascade laser operating in an external cavity with polygon mirror. Optics Express.
- GaInAs/AlInAs Heteropair Quantum Cascade Laser Operating at a Wavelength of 5.6 μm and Temperature of Above 300K. KnE Engineering, 3(6), 236-236.
Chapters
- Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions, Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices (pp. 1-75). Springer Netherlands
- Modelling Quantum Well Laser Diode Structures, Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices (pp. 77-98). Springer Netherlands
Conference proceedings papers
- Rapid measurement of epidermal thickness with a 1.6 MHz FDML OCT system. Biomedical Spectroscopy, Microscopy, and Imaging III, 7 April 2024 - 12 April 2024.
- Towards cutaneous blood flow velocity estimation using VISTA processing on a 1.6 MHz FDML OCT system. Biomedical Spectroscopy, Microscopy, and Imaging III, 7 April 2024 - 12 April 2024.
- The potential application of visible light optical coherence tomography in skin barrier research. Biomedical Spectroscopy, Microscopy, and Imaging III, 7 April 2024 - 12 April 2024.
- A 1600nm optical coherence tomography platform for the assessment of skin inflammation caused by atopic dermatitis. Biomedical Spectroscopy, Microscopy, and Imaging III, 7 April 2024 - 12 April 2024.
- Optical design and simulation of a cervical scanning probe for polarization-sensitive optical coherence tomography using Ansys Zemax OpticStudio. Optical Coherence Imaging Techniques and Imaging in Scattering Media V, 25 June 2023 - 30 June 2023.
- Visible-light optical coherence tomography platform for the development of novel atopic dermatitis treatment. Photonics in Dermatology and Plastic Surgery 2023, 28 January 2023 - 3 February 2023.
- Fast swept continuous wave quantum cascade laser operating in external cavity with polygon mirror. Semiconductor Lasers and Laser Dynamics X (pp 22)
- Methods for reducing relative intensity noise in swept-source mid-infrared OCT. Biomedical Spectroscopy, Microscopy, and Imaging, 6 April 2020 - 10 April 2020.
- Towards swept-source mid-infrared OCT. Biophotonics: Photonic Solutions for Better Health Care VI, 22 April 2018 - 26 April 2018.
- High-speed high-sensitivity infrared spectroscopy using mid-infrared swept lasers (Conference Presentation). High-Speed Biomedical Imaging and Spectroscopy: Toward Big Data Instrumentation and Management, 13 February 2016 - 18 February 2016.
- Rigorous comparison of the spectral SNR of FTIR and EC-QCL spectroscopy (Conference Presentation). Biomedical Vibrational Spectroscopy 2016: Advances in Research and Industry, 13 February 2016 - 18 February 2016.
- Continuous wave room temperature external ring cavity quantum cascade laser. Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol. 2015-August
- External cavity quantum cascade laser based on Fabry-Pérot reflector. Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol. 2015-August
- External Cavity Quantum Cascade Laser Based on Fabry-Pérot Reflector. CLEO: 2015, 2015.
- Continuous Wave Room Temperature External Ring Cavity Quantum Cascade Laser. CLEO: 2015, 2015.
- The mid-infrared swept laser: life beyond OCT?. Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XIX
- A Rapid Swept-Source Mid-Infrared Laser. 2014 International Semiconductor Laser Conference, 7 September 2014 - 10 September 2014.
- A Rapid Swept-Source Mid-Infrared Laser. 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) (pp 155-156)
- Direct determination of transparency current in mid-infrared quantum cascade laser. 2012 Conference on Lasers and Electro-Optics, CLEO 2012
- Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011
- Recent progress in short wavelength quantum cascade lasers. 2011 IEEE Photonics Society Summer Topical Meeting Series (pp 57-58)
- Short wavelength InP based quantum cascade lasers. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
- Short wavelength InP based quantum cascade lasers. Optics InfoBase Conference Papers
- High performance short wavelength InP-based quantum cascade lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616
- Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 844-845)
- Short Wavelength Distributed Feedback Quantum Cascade Laser. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 842-843)
- High-order Transverse Mode Reflecting Quantum Cascade Lasers. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Measurement of gain and subband non-parabolicity in a λ-10μm quantum cascade laser from single-pass transmission measurements. 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
- Short-wavelength quantum cascade lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- Measurement of Gain and Subband Non-Parabolicity in a lambda similar to 10 mu m Quantum Cascade Laser from Single-Pass Transmission Measurements. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 (pp 1624-1625)
- Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 689-694)
- InGaAs-AlAsSb Quantum Cascade Lasers: Towards 3 mu m Emission. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 492-493)
- Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
- InP-Based Quantum Cascade Lateral Grating Distributed Feedback Lasers. Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 12 September 2006 - 15 September 2006.
- MOVPE grown quantum cascade lasers: Single mode performance and structural quality. Optics InfoBase Conference Papers
- Surface emission from MBE and MOVPE grown quantum cascade lasers. Optics InfoBase Conference Papers
- Electron transport in novel Sb-based quantum cascade lasers. NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS, Vol. 110 (pp 295-+)
- All-electrical, room temperature surface plasmon generation using quantum cascade lasers. 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 21 May 2006 - 26 May 2006.
- InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings. Conference Digest - IEEE International Semiconductor Laser Conference (pp 61-62)
- Probing the electronic and optical properties of quantum cascade lasers under operating conditions. Optical Methods in the Life Sciences, Vol. 6386 (pp U86-U93)
- Surface emission from MBE and MOVPE grown quantum cascade lasers. Optics InfoBase Conference Papers
- MOVPE grown quantum cascade lasers: Single mode performance and structural quality. Optics InfoBase Conference Papers
- Surface emission from MBE and MOVPE grown quantum cascade lasers. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 257-259)
- InGaAs-AlAsSb-InP quantum cascade lasers: Performance and prospects. 2005 International Conference on Indium Phosphide and Related Materials (pp 76-77)
- InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
- Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers. 2005 International Conference on Indium Phosphide and Related Materials (pp 64-67)
- MOVPE grown quantum cascade lasers: Single mode performance and structural quality. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 254-256)
- The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 19(4) (pp S273-S275)
- MOVPE grown quantum cascade lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 863-866)
- High performance MOVPE grown quantum cascade lasers. OSA Trends in Optics and Photonics Series, Vol. 96 A (pp 281-282)
- High performance quantum cascade lasers grown by metal-organic vapor phase epitaxy. INFRARED DETECTOR MATERIALS AND DEVICES, Vol. 5564 (pp 156-163)
- The Quantum Cascade Lasers: the semiconductor solution for lasers in the 3-5 mu m wavelength region.. TECHNOLOGIES FOR OPTICAL COUNTERMEASURES, Vol. 5615 (pp 16-26)
- ABOUT THE IMPURITY EFFECT IN THE SiO2:NC-Si SYSTEM. Physics, Chemistry and Application of Nanostructures
- The effect of intervalley scattering on the performance of GaAs-AlAs quantum cascade lasers. PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, Vol. 171 (pp 117-123)
- Population inversion and IR emission under real space transfer: Prospect for a new source. COMPOUND SEMICONDUCTORS 1996(155) (pp 149-152)
Preprints