Professor Jo Shien Ng

PhD, BEng

Department of Electronic and Electrical Engineering

Professor of Semiconductor Devices

Headshot of Jo Shien
j.s.ng@sheffield.ac.uk
+44 114 222 5173

Full contact details

Professor Jo Shien Ng
Department of Electronic and Electrical Engineering
Profile

I received my BEng degree and PhD degrees in electronic engineering from the University of Sheffield, in 1999 and 2003, respectively.

After a postdoctoral position within the EPSRC National Centre for III–V Technologies (now part of EPSRC National Epitaxy Facility) for material and device characterization, I became a Royal Society Research Fellow from 2006 to 2016.

I am currently Professor of Semiconductor Devices. My research is focused on developing a type of light sensors capable of measuring the weakest possible light signals.

There is a wide range of applications that rely on detection of the weakest possible light signal. An example is quantum cryptography (whose encryption key is made up of these very weak light), which currently offers the ultimate encryption safety.

Other key applications for highly sensitive light sensors are high-speed optical communication systems, laser-based ranging (autonomous vehicles and high-resolution geographical mapping), medical imaging (X-ray computed tomography), and non-contact temperature measurements.

These systems depend on detecting light so weak that each signal comprises only hundreds or photons (which make up the light) or even down to a single photon.

I am particularly interested in using avalanche photodiodes (APDs) to detect the very weak light. This semiconductor device senses light and gives electrical current that varies with the light intensity.

A process called avalanche gain (similar to how snow avalanche grows in size as it accelerates down a snow-covered mountain) in the APDs amplifies the electrical current, improving the system’s performance in terms of signal-to-noise ratios.

My current research themes include Si SPADs for detecting visible light from Raman spectroscopy; low-noise APDs for high-speed optical communication systems; measurements of avalanche gain and noise from novel materials; simulation models for APDs and single photon avalanche diodes (SPADs).

Qualifications
  • PhD (Electronic Engineering), University of Sheffield 2003
  • BEng (Electronic Engineering), University of Sheffield 1999
Research interests
  • Avalanche photodiodes (APDs)
  • Geiger mode avalanche photodiodes or Single Photon Avalanche Diodes (SPADs)
  • High-performance photodetectors for mid-infrared light detection
Publications

Journal articles

Conference proceedings papers

  • Ng JS & Tan CH (2018) AlGaAsSb Avalanche Photodiodes. 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018. RIS download Bibtex download
  • Pinel LLG, Tan CH & Ng JS (2018) Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018. RIS download Bibtex download
  • Zhang S, Abdullah S, Tan CH & Ng JS (2018) Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018. RIS download Bibtex download
  • Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Advanced Photon Counting Techniques XI View this article in WRRO RIS download Bibtex download
  • Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO RIS download Bibtex download
  • Zhou X, Xie S, Zhang S, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016. RIS download Bibtex download
  • Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016. RIS download Bibtex download
  • Xie S, Zhou X, Zhang S, Ng JS, Tan CH & IEEE (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) RIS download Bibtex download
  • Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015 RIS download Bibtex download
  • Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference 2015, 2015. RIS download Bibtex download
  • Zhou X, Ng JS & Tan CH (2015) InAs photodiode for low temperature sensing. Sensors, Systems, and Next-Generation Satellites XIX View this article in WRRO RIS download Bibtex download
  • Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) A high sensitivity detector for underwater communication systems. Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications RIS download Bibtex download
  • Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) Narrow-band detector for underwater communication system. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014. RIS download Bibtex download
  • Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) Photoluminescence from localized states in GaAsBi epilayers. 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014. RIS download Bibtex download
  • Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) Design of High Sensitivity Detector for Underwater Communication System. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899 RIS download Bibtex download
  • Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168) RIS download Bibtex download
  • Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) Dilute nitride GaInNAs and GaInNAsSb for solar cell applications. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256 RIS download Bibtex download
  • Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241) RIS download Bibtex download
  • Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811) RIS download Bibtex download
  • Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531) RIS download Bibtex download
  • Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073) RIS download Bibtex download
  • Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277) RIS download Bibtex download
  • Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) InGaAsN absorber for telecommunication wavelength APDs. 2010 Photonics Global Conference, PGC 2010 RIS download Bibtex download
  • Hayat MM, Ong DSG, David JPR & Ng JS (2010) Sensitivity of high-speed receivers using InAlAs avalanche photodiodes. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127) RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424) RIS download Bibtex download
  • Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190) RIS download Bibtex download
  • Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726 RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681 RIS download Bibtex download
  • David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457) RIS download Bibtex download
  • Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320 RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298 RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294) RIS download Bibtex download
  • Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234) RIS download Bibtex download
  • Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210) RIS download Bibtex download
  • Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314) RIS download Bibtex download
  • Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322) RIS download Bibtex download
  • Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348) RIS download Bibtex download
  • Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000) RIS download Bibtex download
  • Hopkins J-M, Preston RD, Maclean AJ, Calvez S, Sun H, NG J, Steer M, Hopkinson M & Burns D (2007) High performance 2.2 μm optically-pumped vertical external-cavity surface-emitting laser. Journal of Modern Optics, Vol. 54(12) (pp 1677-1683) RIS download Bibtex download
  • Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516) RIS download Bibtex download
  • Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514) RIS download Bibtex download
  • Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400) RIS download Bibtex download
  • Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349) RIS download Bibtex download
  • Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342) RIS download Bibtex download
  • Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295) RIS download Bibtex download
  • Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298) RIS download Bibtex download
  • Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194) RIS download Bibtex download
  • Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers RIS download Bibtex download
  • Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788) RIS download Bibtex download
  • Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790) RIS download Bibtex download
  • Gutierrez M, Hopkinson M, Liu HY, Ng JS, Herrera M, Gonzalez D, Garcia R & Beanland R (2005) Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251) RIS download Bibtex download
  • Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431) RIS download Bibtex download
  • Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321) RIS download Bibtex download
  • Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80) RIS download Bibtex download
  • Liu HY, Sun HD, Navaretti P, Ng JS, Hopkinson M, Clark AH & Dawson MD (2004) 1.55-mu m GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (pp 189-193) RIS download Bibtex download
  • Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270) RIS download Bibtex download
  • Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774) RIS download Bibtex download
  • Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) Impact ionisation coefficients of In0.53Ga0.47As. IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228) RIS download Bibtex download
  • Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9) RIS download Bibtex download
  • Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518) RIS download Bibtex download
  • Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes (pp 339-342) RIS download Bibtex download

Software / Code

Datasets

Other

Grants
Dates Sponsor Grant Title PI/co-I
Jul 15 - Apr 16 Commercial AIInP detectors PI
Jul 15 - Jun 16 Commercial Avalanche photodiodes Co-I
Jul 15 - Jun 18 STFC Linear geiger mode detector technology for time resolved spectral measurements PI
Mar 15 - Feb 17 Royal Society High-performance photodetectors for mid-infrared light detection PI
Jan 15 - Jun 18 EU H2020 PROMIS (Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics) Co-I
Jan 15 - Jun 15 European Space Agency InAs APD development for NIR & SWIR applications (Extension) PI
Apr 13 - Oct 16 EPSRC Next generation avalanche photodiodes Co-I
Apr 13 - Mar 16  Royal Society Royal Society University Research Fellowship PI
Sept 12 - Aug 15 EPSRC InAsNSb dilute nitride materials for mid-infrared devices and applications. Co-I
Jun 14 - Oct 14 Commercial InGaAs/InAIAs APDs

PI

Jan 13 - Dec 14 European Space Agency InAs APD development for NIR & SWIR applications Co-I
Dec 12 - Jun 13 Commercial InGaAs/InAIAs APDs PI
Apr 12 - Sept 12 MoD CDE Narrow band APDs for underwater communications Co-I
Mar 11 - Feb 13 EPSRC High performance X-ray detectors with sub-100eV energy resolution PI
Oct 10 - Sept 13 EPSRC Novel InAS avalanche photodiodes for photon counting applications Co-I
Dec 09 - Nov 12 STFC (PIPSS) Knowledge exchange in AIGaAs X-ray detectors PI
Apr 09 - Apr 10 EMRS DTC Detector for infrared Algorithmic Spectrometer Co-I
Oct 08 - Sept 11 TSB Extended Tempertaure OptoElectronics II (ETOE II) Co-I
May 08 - Jul 11 EU FP7 Materials for avalanche receiver for ultimate sensitivity (MARISE) PI
May 08 - Jul 10 EPSRC New high-performance avalanche photodiodes based on the unique properties of dilute nitrides. Co-I
Nov 07 - Oct 08 MoD Col Detectors for UV non line-of-sight communication Co-I
Nov 07 - Oct 08 MoD Col 2 Band Quantum Dot Infrared Photodiodes for Mid and Long Wave Infrared Scene Sensing Co-I
Oct 07 - Sept 09 DSTL & STFC Avalanche photodiode array detector for eye-safe 3D imaging PI
Apr 07 - Mar 10 EMRS DTC Infrared photodiodes based on Type-II Superlattices Co-I
Oct 06 - Mar 13 Royal Society Royal Society University Research Fellowship PI
May 06 - Sept 09 European Space Agency Near infrared detectors for LIDAR Co-I
Apr 06 - Mar 09 EMRS DTC   Co-I
Oct 05 - Dec 05 EMRS DTC Novel low voltage InAs avalanche photodiodes for affordable 2D IR detectors. Co-I
Apr 04 - Aprt 06 EU FP6 Secure Communications based on Quantum Cryptography Co-I
Apr 03 - Mar 05 EMRS DTC High sensitivity avalanche photodiodes for imaging and rangefinding Co-I
Teaching activities
  • EEE123 (Introduction to Electric and Electronic Circuits)
  • AER11003 (Aerospace Electrics and Drives)
Professional activities
  • Departmental Director of Research & Innovation
  • EEE Women Adviser
  • EEE Athena SWAN team member
Research students
Student Degree Status Primary/Secondary
Goldberg G R  MPhil Graduated Primary
Meng X PhD Graduated Primary
Mohmad A R B PhD Graduated Primary
Ong D S G PhD Graduated Primary
Ong S-L PhD Graduated Primary
Dimler S J PhD Graduated Secondary
Guerrero Moreno M A MPhil Graduated Secondary