Dr Kristian Groom
PhD, MPhys
School of Electrical and Electronic Engineering
Senior Lecturer
Semiconductor Materials and Devices Research Group
k.m.groom@sheffield.ac.uk
+44 114 222 5822
+44 114 222 5822
Full contact details
Dr Kristian Groom
School of Electrical and Electronic Engineering
School of Electrical and Electronic Engineering
- Profile
-
I graduated with a MPhys (1999) and a PhD (2003) both from the Dept. of Physics at The University of Sheffield. My thesis detailed research into the carrier processes and dynamics in quantum dot lasers.
I joined the EEE Dept in 2003 initially as a postdoctoral researcher investigating quantum dot lasers for telecommunications applications as part of a European project, but soon became involved in developing device fabrication capabilities for a broad range of additional projects including quantum cascade lasers, InP photodiodes, and single photon devices.
In 2005 I was awarded a Royal Academy of Engineering Research Fellowship for research into advanced semiconductor laser engineering, focusing on regrowth technologies for GaAs, including buried self-aligned stripe and distributed feedback (ie. single frequency) lasers, which provided a potential platform for GaAs photonic integration and next generation vertically-emitting lasers.
At the same time, a burgeoning interest in biophotonics research drew me in to investigate GaAs based superluminescent diodes as low coherence light sources for application in optical coherence tomography.
Following the end of my Fellowship I was appointed as Lecturer in 2010, moving to Senior Lecturer in 2012.
My research continues to focus on semiconductor optoelectronic component design and manufacture, with an interest in photonic integration and in the application of near- and mid-IR semiconductor lasers, superluminescent diodes, amplifiers, detectors and passive optical elements for application in high value manufacturing methodologies, such as in additive manufacturing and embeddable metrology.
I am currently working on projects to develop capability for the heterogeneous integration of III-V semiconductor components and circuits upon a range of substrates to enable new sensor technologies, both through the collaborative EPSRC Heteroprint project and via the EPSRC Future Photonics Hub.
At the same time, I am pursuing research into the application of laser diode arrays for efficient high-speed additive manufacturing of both metallic and polymer parts.
- Research interests
-
- Optoelectronic device manufacture using novel fabrication strategies
- Additive manufacturing using semiconductor laser arrays
- Semiconductor lasers, superluminescent diodes, optical amplifiers and photodiodes
- Semiconductor quantum dots
- Mid-infrared quantum cascade lasers
- Photonic device engineering for application in metrology and biomedical imaging systems
- Publications
-
Journal articles
- Dual-laser powder bed fusion using 450 nm diode area melting and 1064 nm galvo-scanning fiber laser sources. Materials & Design, 248, 113511-113511.
- “Multi-laser powder bed fusion of Ti6Al4V: diode area melting utilizing low-power 450 nm diode lasers”. Journal of Materials Processing Technology. View this article in WRRO
- Hybrid integration methodology for quantum cascade lasers with germanium waveguides in mid-IR. EPJ Web of Conferences, 266, 01008-01008.
- Diode area melting of Ti6Al4V using 808 nm laser sources and variable multi-beam profiles. Materials & Design, 215, 110518-110518.
- Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography. Applied Physics Letters, 117(6), 061106-061106.
- Investigating the melt pool properties and thermal effects of multi-laser diode area melting. The International Journal of Advanced Manufacturing Technology, 97(1-4), 1383-1396. View this article in WRRO
- Diode area melting single-layer parametric analysis of 316L stainless steel powder. The International Journal of Advanced Manufacturing Technology. View this article in WRRO
- Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1-11. View this article in WRRO
- Laser diode area melting for high speed additive manufacturing of metallic components. Materials and Design, 117, 305-315. View this article in WRRO
- A GaAs-based self-aligned stripe distributed feedback laser. Semiconductor Science and Technology, 31(8), 085001-085001. View this article in WRRO
- GaAs-based superluminescent diodes with window-like facet structure for low spectral modulation at high output powers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(4). View this article in WRRO
- Evaluation of selective laser sintering processes by optical coherence tomography. MATERIALS & DESIGN, 88, 837-846. View this article in WRRO
- All-semiconductor photonic crystal surface-emitting lasers based on epitaxial regrowth. IEEE Journal on Selected Topics in Quantum Electronics, 19(4).
- Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser. IEEE Photonics Technology Letters, 24(11), 966-968.
- Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser. Japanese Journal of Applied Physics, 51(2S), 02BG05-02BG05.
- The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. APPLIED PHYSICS LETTERS, 100(5).
- Optimisation of coupling between photonic crystal and active elements in an epitaxially regrown GaAs based photonic crystal surface emitting laser. Japanese Journal of Applied Physics, 51(2 PART 2).
- The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. Applied Physics Letters, 100(5).
- Subthreshold diode characteristics of InAs/GaAs quantum dot lasers. PHYS REV B, 83(20). View this article in WRRO
- Distributed feedback laser employing buried GaAs/InGaP index-coupled grating. ELECTRON LETT, 46(15), 1076-U51.
- Quantum dot superluminescent diodes for optical coherence tomography: Skin imaging. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 748-754.
- Quantum dot superluminescent diodes for optical coherence tomography: Device engineering. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 1015-1022. View this article in WRRO
- Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes. S AFR J SCI, 105(7-8), 276-277.
- Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots. IEEE J SEL TOP QUANT, 15(3), 757-763.
- Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer. IEEE J SEL TOP QUANT, 15(3), 819-827. View this article in WRRO
- Multi-section quantum dot superluminescent diodes for spectral shape engineering. IET OPTOELECTRONICS, 3(2), 100-104.
- Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers. JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4).
- Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. MICROELECTRONICS JOURNAL, 40(3), 588-591.
- GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer. ELECTRON LETT, 44(15), 905-907.
- A quantum dot swept laser source based upon a multisection laser device. JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2965-2967.
- Structural analysis of life tested 1.3 mu m quantum dot. J APPL PHYS, 103(1).
- Systematic study of the. effects of modulation p-doping on 1.3-mu m quantum-dot lasers. IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
- All semiconductor swept laser source utilizing quantum dots. APPL PHYS LETT, 91(12).
- High-power and broadband quantum dot superluminescent diodes centered at 1250 nm for optical coherence tomography. IEEE J SEL TOP QUANT, 13(5), 1267-1272.
- Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes. APPL PHYS LETT, 91(8).
- Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers. PHYS REV B, 76(8).
- Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer. ELECTRON LETT, 43(12), 670-672.
- Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching. ELECTRON LETT, 43(10), 587-589.
- Fabrication and characterization of InP-based quantum cascade distributed feedback lasers with inductively coupled plasma etched lateral gratings. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2424-2428.
- Molecular beam epitaxial growth of high power quantum dot super-luminecent diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2418-2420.
- Zero and controllable linewidth enhancement factor in p-doped 1.3 mu m quantum dot lasers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2421-2423.
- Low threshold current density and negative characteristic temperature 1.3 mu m InAs self-assembled quantum dot lasers. APPL PHYS LETT, 90(11).
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- High-power 1.3-mu m quantum-dot superluminescent light-emitting diode grown by molecular beam epitaxy. IEEE PHOTONIC TECH L, 19(2-4), 109-111.
- Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244(1), 82-86.
- Design, growth, fabrication, and characterization of InAs/GaAs 1.3 mu m quantum dot broadband superluminescent light emitting diode. J APPL PHYS, 100(10).
- High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings. APPL PHYS LETT, 89(20).
- Observation and modeling of a room-temperature negative characteristic temperature 1.3-mu m p-type modulation-doped quantum-dot laser. IEEE J QUANTUM ELECT, 42(11-12), 1259-1265.
- p-doped 1.3 mu m InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. APPL PHYS LETT, 89(7).
- 1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. ELECTRON LETT, 42(16), 922-923.
- Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. JPN J APPL PHYS 1, 45(4A), 2542-2545.
- Broadband 6 mu m
. APPL PHYS LETT, 88(12).
- Design and performance of an InGaAs-InP single-photon avalanche diode detector. IEEE J QUANTUM ELECT, 42(3-4), 397-403.
- Infrared modulated interlevel spectroscopy of 1.3 mu m self-assembled quantum dot lasers using a free electron laser. APPL PHYS LETT, 88(8).
- Mid-infrared optical coherence tomography: Application in tissue engineering. Optics InfoBase Conference Papers.
- Fabrication of v-groove gratings in InP by inductively coupled plasma etching with SiCl4/Ar. SEMICOND SCI TECH, 21(1), L1-L5.
- Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells. IEEE PHOTONIC TECH L, 18(1-4), 58-60.
- Inversion of exciton level splitting in quantum dots. PHYS REV B, 72(11). View this article in WRRO
- Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 11(5), 1041-1047.
- Improved temperature performance of 1.31-mu m quantum dot lasers by optimized ridge waveguide design. IEEE PHOTONIC TECH L, 17(9), 1785-1787. View this article in WRRO
- High-performance three-layer 1.3-mu m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE PHOTONIC TECH L, 17(6), 1139-1141. View this article in WRRO
- Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. APPL PHYS LETT, 86(14).
- Growth, fabrication, and operating characteristics of ultra-low threshold current density 1.3 mu m quantum dot lasers. JPN J APPL PHYS 1, 44(4B), 2520-2522.
- Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. Device Research Conference - Conference Digest, DRC, 2005, 71-72.
- Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons. PHYS REV B, 70(19).
- 1.3 mu m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. ELECTRON LETT, 40(22), 1412-1413.
- Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques. APPL PHYS LETT, 85(12), 2226-2228.
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures. J APPL PHYS, 96(4), 1988-1992.
- Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
- Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots.. Phys Rev Lett, 93(5), 057401.
- Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments. APPL PHYS LETT, 81(22), 4118-4120.
- Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. APPL PHYS LETT, 81(1), 1-3.
- Staircase-like dynamics of stimulated emission in InAs quantum dot amplifiers. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 74, 178-179.
- Performance of lasers containing three, five and seven layers of quantum dots. IEE P-OPTOELECTRON, 148(5-6), 238-242.
- Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers. ELECTRON LETT, 37(20), 1220-1222.
- Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 123-127.
- Design, fabrication and characterisation of InGaAs/InP single-photon
avalanche diode detectors.
- Use of 450-808 nm diode lasers for efficient energy absorption during powder bed fusion of Ti6Al4V. The International Journal of Advanced Manufacturing Technology.
Conference proceedings papers
- Silicon photonics mid-infrared devices and sensors. Smart Photonic and Optoelectronic Integrated Circuits 2024, 27 January 2024 - 1 February 2024.
- Group IV Mid-Infrared Photonic Devices and Applications. 2023 23rd International Conference on Transparent Optical Networks (ICTON), 2 July 2023 - 6 July 2023.
- Hybrid laser integration in the mid-IR for silicon photonics sensing applications. Silicon Photonics XVIII, 28 January 2023 - 3 March 2023.
- Group IV mid-infrared photonics for communications and sensing. Integrated Optics: Devices, Materials, and Technologies XXVI, 22 January 2022 - 28 February 2022.
- Multi-laser processing for high-speed powder bed additive manufacturing and opportunities for photonic integration. SPIE Photonex Industry Talks, 5 October 2020 - 9 October 2020.
- High-power gaas-based superluminescent diodes employing window-like facets for low spectral modulation. Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015
- Towards swept-source mid-infrared OCT. Biophotonics: Photonic Solutions for Better Health Care VI, 22 April 2018 - 26 April 2018.
- Gallium nitride light sources for optical coherence tomography. Gallium Nitride Materials and Devices XII
- Towards in-situ process monitoring in selective laser sintering using optical coherence tomography. Laser 3D Manufacturing III View this article in WRRO
- GaAs-based self-aligned stripe superluminescent diodes processed normal to the cleaved facet. Novel In-Plane Semiconductor Lasers XV
- Simulation of broad spectral bandwidth emitters at 1060 nm for optical coherence tomography. Novel In-Plane Semiconductor Lasers XV
- Rigorous comparison of the spectral SNR of FTIR and EC-QCL spectroscopy
(Conference Presentation). Biomedical Vibrational Spectroscopy 2016: Advances in Research and Industry, 13 February 2016 - 18 February 2016.
- High-speed high-sensitivity infrared spectroscopy using mid-infrared swept lasers
(Conference Presentation). High-Speed Biomedical Imaging and Spectroscopy: Toward Big Data Instrumentation and Management, 13 February 2016 - 18 February 2016.
- High-power gaas-based superluminescent diodes employing window-like facets for low spectral modulation. Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015
- High-power gaAs-based superluminescent diodes employing window-like facets for low spectral modulation. Optics InfoBase Conference Papers
- Coherently Coupled Photonic Crystal Surface Emitting Lasers. 2014 International Semiconductor Laser Conference, 7 September 2014 - 10 September 2014.
- GaAs Based Superluminescent Diodes Employing Window Facets in a Self-Aligned Stripe. 2014 International Semiconductor Laser Conference, 7 September 2014 - 10 September 2014.
- High-power gaAs-based superluminescent diodes employing window-like facets for low spectral modulation. Optics InfoBase Conference Papers
- GaAs-based Superluminescent Diodes Employing Window Facets in a Self-Aligned Stripe. 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) (pp 175-176)
- Coherently Coupled Photonic Crystal Surface Emitting Lasers. 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) (pp 213-214)
- Photonic crystal surface emitting lasers based on epitaxial regrowth. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
- Photonic crystal surface emitting lasers based on epitaxial regrowth. Conference Digest - IEEE International Semiconductor Laser Conference (pp 167-168)
- Realization of a photonic crystal surface emitting laser through GaAs based regrowth. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8255
- Epitaxially regrown GaAs based photonic crystal surface emitting laser. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 705-706)
- Epitaxially regrown GaAs based photonic crystal surface emitting laser. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 705-706)
- Gain spectra analysis of bilayer quantum dot lasers beyond 1.3μm. 2010 Photonics Global Conference, PGC 2010
- Dual-state lasing and the case against the phonon bottleneck. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616
- A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616
- Buried inGaP/GaAs grating Distributed Feedback laser with AlGaAs cladding. Optics InfoBase Conference Papers
- Buried InGaP/GaAs grating distributed feedback laser with AlGaAs cladding. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 14 June 2009 - 19 June 2009.
- GaAs Based Quantum Dot Superluminescent Diodes for Optical Coherence Tomography of Skin Tissue. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 426-431)
- A Platform for GaAs Opto-Electronic Integrated Circuits Based on GaAs/AlGaAs Overgrowth of Patterned InGaP. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 213-214)
- Broad-band High Power Quantum Dot Superluminescent Diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 604-605)
- Optical coherence tomography with high power quantum-dot superluminescent diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 207-208)
- GaAs-based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum p-type Modulation Doping. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilising a Multi-Contact Device Incorporating Chirped Quantum Dots. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Two Section Quantum Dot Lasers for Tuning and Modulation. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer. Optics InfoBase Conference Papers
- GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer. Optics InfoBase Conference Papers
- multi-contact quantum dot superluminescent diodes for optical coherence tomography. 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
- High-performance 1300-nm InAs/GaAs quantum-dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer. 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
- Multi-Contact Quantum Dot Superluminescent Diodes for Optical Coherence Tomography. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 104-106)
- Tuning and Modulation in Two Section Quantum Dot Lasers. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 93-96)
- 1.3 mu m Quantum Dot Self-Aligned Stripe Laser. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 97-100)
- Two Section Quantum Dot Devices for Tuning and Modulation. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 109-110)
- GaAs-Based Buried Heterostructure Laser Incorporating an InGaP Opto-Electronic Confinement Layer. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 (pp 2177-2178)
- GaAs-Based Self-Aligned Laser Incorporating an InGaP Opto-Electronic Confinement Layer. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 97-98)
- Multi-Contact Quantum Dot Superluminescent Diodes for Optical Coherence Tomography. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 107-108)
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Conference on Lasers and Electro-Optics, 2007, CLEO 2007
- Electro-optical characterization of self-assembled InAs/GaAs quantum rings embedded in P-i-N and Schottky diodes. AIP Conference Proceedings, Vol. 893 (pp 909-910)
- Systematic study of the effects of δ-p-doping on 1.3μm Dot-in-well lasers. Conference on Lasers and Electro-Optics Europe - Technical Digest
- Intensity noise of ultrabroadband Quantum Dot Light Emitting Diodes and Lasers at 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6603
- Photon Coupling Mechanism in 1.3-mu m Quantum-Dot Lasers. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 2340-2341)
- Growth and characterization of multi-layer 1.3 mu m quantum dot lasers. INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, Vol. 6(3-4) (pp 291-296)
- Systematic study of the effects of modulation p-doping on 1.3 mu m InAs/GaAs dot-in-well lasers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 517-520)
- Quantum dot superluminescent diodes - Bandwidth engineering and epitaxy for high powers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 289-292)
- High-performance 1.3 mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 280-283)
- InP-Based Quantum Cascade Lateral Grating Distributed Feedback Lasers. Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 12 September 2006 - 15 September 2006.
- Inversion of the exciton fine structure splitting in quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 32(1-2) (pp 97-100)
- Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers
- Broadband quantum cascade lasers and superluminescent diodes. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- Design, fabrication, and operating characteristics of broadband quantum dot superluminescent diodes. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- High-power and broad-band quantum dot SLDs for optical coherence tomography. Conference Digest - IEEE International Semiconductor Laser Conference (pp 47-48)
- InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings. Conference Digest - IEEE International Semiconductor Laser Conference (pp 61-62)
- High-performance 1.3-mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature - art. no. 618417. Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp 18417-18417)
- Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells - art. no. 612907. Quantum Dots, Particles, and Nanoclusters III, Vol. 6129 (pp 12907-12907)
- Optimizing the growth of 1.3-mu m InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
- Enhanced photoluminescence intensity of 1.3-mu m multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 129-132)
- Lasing and spontaneous emission characteristics of 1.3 mu m In(Ga)As quantum-dot lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 382-385)
- Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 401-402)
- Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2005 (pp 402-403)
- Growth and characterization of 1.3 mu m multi-layer quantum dots lasers incorporating high growth temperature spacer layers. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 1547-1548)
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. OSA Trends in Optics and Photonics Series, Vol. 97 (pp 667-668)
- Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference (pp 57-58)
- Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
Patents
- Semiconductor light source and method of fabrication thereof. GB2471266 (national/regional). Appl. 29 Dec 2010.
Preprints
- Design, fabrication and characterisation of InGaAs/InP single-photon
avalanche diode detectors, arXiv.
- Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode
Detector, arXiv.
- Inversion of exciton level splitting in quantum dots, arXiv.
- Dual-laser powder bed fusion using 450 nm diode area melting and 1064 nm galvo-scanning fiber laser sources. Materials & Design, 248, 113511-113511.
- Teaching activities
-
- EEE118 Electronic Devices & Circuits
- EEE6214 Packaging & Reliability of Microsystems
- Professional activities and memberships
-
- Senior Lecturer
- TUoS Manufacturing Research Board member
- EEE Estates Committee member
- Nanoscience Management Committee member
- Research students
Student Degree Status Primary/Secondary Ghazal O M S PhD Graduated Primary Greenwood P D L
PhD Graduated Primary Lei H PhD Graduated Primary Peyvast N PhD Graduated Primary
Jin Xiao PhD Graduated Secondary Li Wei PhD Graduated Secondary Qian H PhD Graduated Secondary Stevens B J PhD Graduated Secondary Zavala Arredondo M A PhD Graduated Secondary