Dr Robert Richards
PhD, MPhys
School of Electrical and Electronic Engineering
Lecturer in Semiconductor Materials
Electrical and Electronic Engineering Y3 & 4 Tutor
Full contact details
School of Electrical and Electronic Engineering
- Profile
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I studied physics at the University of Sheffield, gaining an MPhys in 2009. I then enrolled in the E-Futures Doctoral Training Centre, working on a variety of energy related projects from molecular biology through to mechanical engineering.
In late 2010 I started my PhD in Sheffield on photovoltaic characterisation, working with the Imperial College London spin-out company Quantasol.
Following the sale of Quantasol in 2011, I moved into molecular beam epitaxy (MBE) and gained my PhD in the MBE growth and characterisation of dilute bismide materials in 2014.
I was awarded an EPSRC Prize Fellowship to continue this work throughout 2015 and remained in the Semiconductor Materials and Devices group as a PDRA throughout 2016.
During this time I was awarded a Royal Academy of Engineering research fellowship, which started in 2017. Through this fellowship I am working on the development of MBE growth techniques for producing infrared optoelectronic devices.
The development of modern electronic devices has been driven by breakthroughs in functional materials. The realisation of gallium nitride devices gave us blue LEDs, blu-ray players, and white light LEDs; recent improvements in television technology have been triggered by the advent of organic LEDs and progress in quantum dot production.
My interest is in the development of highly mismatched alloys (HMAs) for next generation opto-electronic devices. These are devices that manipulate the interaction between photons and electrons, such as LEDs, lasers or solar cells.
HMAs are material systems wherein one of the component elements is significantly larger or smaller than the others. This mismatch makes the synthesis of these materials very challenging, but also endows them with unique opto-electronic properties.
- Research interests
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- Dilute bismide semiconductor growth and characterisation
- Publications
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Journal articles
- Capacitance-voltage characterization of GaAsBi/GaAs multiple quantum wells grown by molecular beam epitaxy. Journal of Physics: Conference Series, 3020. View this article in WRRO
- Structural and optical characteristics of epitaxially grown AlGaAsBi on GaAs for potential application in ultra-low noise avalanche photodiodes. Applied Surface Science, 689, 162473-162473.
- The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles. Surfaces and Interfaces, 56, 105490-105490.
- Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11(11), 4846-4853. View this article in WRRO
- The Effects of Growth Interrruptions in the Gaasbi/Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles.
- Exploring the implementation of GaAsBi alloys as strain-reducing layers in InAs/GaAs quantum dots. Nanomaterials, 14(4). View this article in WRRO
- Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature. Materials Science in Semiconductor Processing, 169, 107888-107888.
- Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode. Applied Physics A, 129(8).
- Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications. Solid State Phenomena, 343, 99-104.
Book chapters
- Microtexture and Polymorphism Observed During the Molecular-Beam Epitaxial Growth of Group III–V Semiconductor Nanostructures, Topics in Applied Physics (pp. 109-141). Springer Nature Singapore
Conference proceedings
- Effect of biasing under illumination on GaAsBi/GaAs multiple quantum wells for solar cell performance. 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (pp 40-43), 28 August 2023 - 30 August 2023.
- Capacitance-voltage characterization of GaAsBi/GaAs multiple quantum wells grown by molecular beam epitaxy. Journal of Physics: Conference Series, 3020. View this article in WRRO
- Grants
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- 2015 - Development of InAsBi Quantum Dots as Single Photon Emitters for Quantum Technology
- Royal Academy of Engineering research fellowship: Development of indium gallium arsenide bismide for mid-wavelength infrared applications
- Teaching interests
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- EEE119 - Digital System Engineering
- EEE380 - Individual Design Project
- EEE381 - Individual Investigative Project
- Professional activities and memberships
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- Royal Academy of Engineering Post-doctoral Research Fellow
- UK Semiconductors Conference organising committee member
- Postdoctoral Fellowship College mentor