Professor Shankar Madathil
PhD, MTech, MSc, BSc
School of Electrical and Electronic Engineering
Chair in Power Electronic Systems
Electrical Machines and Drives Research Group
Rolls-Royce/Royal Academy of Engineering Research Chair
s.madathil@sheffield.ac.uk
+44 114 222 5856
+44 114 222 5856
Sir Frederick Mappin Building
Full contact details
Professor Shankar Madathil
School of Electrical and Electronic Engineering
Sir Frederick Mappin Building
Mappin Street
Sheffield
S1 3JD
School of Electrical and Electronic Engineering
Sir Frederick Mappin Building
Mappin Street
Sheffield
S1 3JD
- Profile
-
Prof Shankar N Ekkanath Madathil was a Royal Academy of Engineering Research Professor in Power Electronics (2007-12) and a Royal Society Industry Fellow of Rolls-Royce (2013-17).
Between 1994 and 2007, he was the Founding Director of the Emerging Technologies Research Centre at De Montfort University, which he established to undertake research in microelectronics.
Prior to that, he was elected as a Maudslay Engineering Research Fellow of Pembroke College, Cambridge.
He completed his PhD in Cambridge University through support from Cambridge Nehru scholarship and has a Master’s degree in Semiconductor Technology and a Master’s degree in Materials Science.
He has more than three decades of proven track record in the field of power semiconductor devices and associated technologies and works with key supply chain partners world-wide.
His group has already delivered world-leading innovative power semiconductor device solutions in Silicon (Si) and wide band gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC).
His notable contributions include the Clustered IGBT concept in Silicon and Silicon Carbide; the first demonstration of 3 kV Intelligent Power Chip in Silicon, record low on-state resistance 100 V devices in Silicon, world first demonstration of high density 2 Dimensional Hole Gas in GaN and most recently, ground-breaking super-junction switching technologies in GaN. As PI/Co-I, he has successfully led projects to transfer innovative power device technologies to industry.
He was an invited Fellow at the National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan in 2005 & 2007. He is a Visiting Professor and Vajra Faculty in IIT Bombay, India.
Most recently, he has been offered short-term Invitation Fellowship by Japanese Society of Promotion of Sciences to spend two months at Kyushu University in Japan.
He is an editor of IEEE – Transactions in Electron Devices, IEEE - Transactions in Devices and Materials Reliability, Proceedings of the Royal Society – Mathematical, Physical and Engineering Sciences and an associated editor of IET – Journal of Power Electronics.
He is a Fellow of IET and IOP. Presently, he is involved as a Technical Program Committee member in various IEEE and premier conferences such as IEDM and ESSDERC/ESSIRC.
- Qualifications
-
- PhD (Engineering), University of Cambridge 1992
- MTech (Physical Engineering), Indian Institute of Science, Bangalore 1986
- MSc (Applied Sciences), PSG College of Technology, India 1984
- BSc (Applied Sciences), PSG College of Technology, India 1982
- Research interests
-
- Power semiconductor devices and technologies
- High temperature power electronics
- Active gate drive technologies
- High power density converters
- Power integrated circuits for lighting, automotive and switched mode power supplies
- High voltage thin film transistors and integration aspects
- Modelling of power semiconductor devices and technologies
- New concepts for semiconductor devices and technologies
- Power semiconductor devices and technologies for harsh environments
- Wide band gap power semiconductor devices and technologies
- Nano technologies for power electronic applications
- Publications
-
Journal articles
- Evaluation of a 1200 V polarization super junction GaN field-effect transistor in cascode configuration. Electronics, 14(3). View this article in WRRO
- Characteristics of a 1200 V hybrid power switch comprising a Si IGBT and a SiC MOSFET. Micromachines, 15(11). View this article in WRRO
- Current saturation behavior in GaN polarization superjunction hybrid diode. physica status solidi (a), 221(21). View this article in WRRO
- Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors. physica status solidi (a), 221(4). View this article in WRRO
- Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics, 62. View this article in WRRO
- Erratum: Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability [Jpn. J. Appl. Phys.
62 014501 (2023)]. Japanese Journal of Applied Physics, 62(3), 039401-039401.
- Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics, 62(1). View this article in WRRO
- Investigation on shift in threshold voltages of 1.2 kV GaN polarization superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices, 70(1), 178-184. View this article in WRRO
- Investigation of turn-on performance in 1.2 kV MOS-bipolar devices. Japanese Journal of Applied Physics, 61(SC). View this article in WRRO
- Analytical modeling of sheet carrier density and ON-resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices, 68(11), 5714-5719. View this article in WRRO
- An ultra-fast protection scheme for normally-on wide bandgap devices. IET Power Electronics, 14(14), 2305-2313. View this article in WRRO
- Evaluation of gate drive circuit effect in cascode GaN-based application. Bulletin of the Polish Academy of Sciences : Technical Sciences, 69(2). View this article in WRRO
- Design of a snubber circuit for low voltage DC solid-state circuit breakers. IET Power Electronics, 14(6), 1111-1120. View this article in WRRO
- Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices. IEEE Transactions on Power Electronics, 36(3), 3304-3311. View this article in WRRO
- Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology. IEEE Transactions on Electron Devices, 67(12), 5621-5627. View this article in WRRO
- 3-D scaling rules for high voltage planar clustered IGBTs. IEEE Transactions on Electron Devices, 67(12), 5613-5620. View this article in WRRO
- Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices. IEEE Transactions on Electron Devices, 67(9), 3691-3697. View this article in WRRO
- Guest editorial : selected papers from the 14th international seminar on power semiconductors (ISPS 2018). IET Power Electronics, 12(15), 3859-3860. View this article in WRRO
- A novel approach to suppress the collector induced barrier lowering (CIBL) effect in narrow mesa IGBTs. IEEE Electron Device Letters, 39(9), 1350-1353. View this article in WRRO
- Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11(14), 2198-2203. View this article in WRRO
- Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65(4), 1440-1446. View this article in WRRO
- Guest Editorial: Selected Papers from the 13th International Seminar on PowerSemiconductors (ISPS 2016). IET Power Electronics, 11(4), 627-628.
- The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. View this article in WRRO
- The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001.
- A snap-back free Shorted Anode Super-Junction TCIGBT. IET Power Electronics.
- Low cost high voltage GaN polarization superjunction field effect transistors. Physica Status Solidi (a), 214(8). View this article in WRRO
- P/N混載GaNパワー集積回路技術の現状, 199-199.
- The world’s first high voltage GaN-on-Diamond power semiconductor devices. Solid-State Electronics, 125, 111-117. View this article in WRRO
- Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period. Facta universitatis - series: Electronics and Energetics, 29(1), 1-10.
- Base drive energy recovery for a silicon bipolar junction transistors. IET Power Electronics, 8(12), 2429-2434.
- International Seminar on Power Semiconductors 2014. IET Power Electronics, 8(12), 2307-2307.
- Increased static R ON in GaN-on-silicon power transistors under high-side operation with floating substrate conditions. Electronics Letters, 51(1), 108-110.
- Crosstalk in monolithic GaN-on-Silicon power electronic devices. Microelectronics Reliability, 54(9-10), 2242-2247.
- Comparison of the thermal properties of polycrystalline diamond and aluminium nitride substrates. IECON Proceedings Industrial Electronics Conference, 544-548.
- Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC. IEEE Transactions on Electron Devices.
- Investigation of negative gate capacitance in MOS-gated power devices. IEEE Transactions on Electron Devices, 59(12), 3464-3469.
- Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT. Ieee Transactions on Power Electronics, 27, 3072-3080.
- Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC. Materials Science Forum, 717-720, 1139-1142.
- Numerical evaluation of the short-circuit performance of 3.3-kV CIGBT in field-stop technology. IEEE Transactions on Power Electronics, 27(5), 2673-2679.
- Performance evaluation of 3.3-kV planar CIGBT in the NPT technology with RTA anode. IEEE Transactions on Electron Devices, 59(5), 1439-1444.
- GaN power devices using the polarization junction concept. 電気学会研究会資料. SPC, 半導体電力変換研究会, 2011(142), 1-6.
- GaN power devices using the polarization junction concept. 電気学会研究会資料. EDD, 電子デバイス研究会, 2011(50), 1-6.
- Performance Evaluation of 10-kV SiC Trench Clustered IGBT. IEEE ELECTR DEVICE L, 32(9), 1272-1274.
- GaN-based super heterojunction field effect transistors using the polarization junction concept. IEEE Electron Device Letters, 32(4), 542-544.
- Comparison of Trench gate IGBT and CIGBT devices for 3.3kV high power module applications. Speedam 2010 International Symposium on Power Electronics Electrical Drives Automation and Motion, 545-550.
- High density two-dimensional hole gas induced by negative polarization at GaN/AlGaN heterointerface. Applied Physics Express, 3(12).
- Comparison of trench gate IGBT and CIGBT devices for increasing the power density from high power modules. IEEE Transactions on Power Electronics, 25(3), 583-591.
- Current distribution analysis of insulated gate bipolar transistor cells. Japanese Journal of Applied Physics, 49(4 PART 2).
- A new method to improve tradeoff performance for advanced power MOSFETs. IEEE Electron Device Letters, 30(4), 416-418.
- Turn-off behavior of 1.2 kV/25 A NPT-CIGBT under clamped inductive load switching. IEEE Transactions on Power Electronics, 24(4), 1100-1106.
- Anode engineering for the insulated gate bipolar transistor - A comparative review. IEEE Transactions on Power Electronics, 22(5), 1857-1866.
- Zero-current soft-switching performance of 1200-V PT clustered insulated gate bipolar transistor. IEEE Transactions on Power Electronics, 22(4), 1177-1185.
- Fully isolated high side and low side LIGBTs in junction isolation technology. Proceedings of the International Symposium on Power Semiconductor Devices and Ics, 2006.
- Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology. IEEE Transactions on Electron Devices, 53(7), 1740-1744.
- Transient substrate currents in junction-isolated lateral IGBT. IEEE Transactions on Electron Devices, 53(6), 1487-1490.
- Influence of layout design on the performance of LIGBT. IEE Proceedings Circuits Devices and Systems, 153(1), 67-72.
- Performance analysis of the segment npn anode LIGBT. IEEE Transactions on Electron Devices, 52(11), 2482-2488.
- Innovation in power semiconductor industry: Past and future. IEEE Transactions on Engineering Management, 52(4), 429-439.
- MOS control device concepts for AC-AC matrix converter applications: The HCD concept for high-efficiency anode-gated devices. IEEE Transactions on Electron Devices, 52(9), 2075-2080.
- A low temperature combination method for the production of ZnO nanowires. Nanotechnology, 16(10), 2188-2192.
- Design and analysis of multichannel LIGBTs in junction isolation technology. IEEE Transactions on Electron Devices, 52(7), 1672-1676.
- Low temperature a-Si:H TFTs with a SiO2 gate insulator deposited by liquid phase deposition. Materials Research Society Symposium Proceedings, 808, 697-702.
- Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping. IEEE Transactions on Electron Devices, 51(12), 2223-2228.
- Realizing high breakdown voltages (>600 V) in partial SOI technology. Solid State Electronics, 48(9), 1655-1660.
- Comparative study of drift region designs in RF LDMOSFETs. IEEE Transactions on Electron Devices, 51(8), 1296-1303.
- 1.7 kV NPTV-groove clustered IGBT. IEE Proceedings Circuits Devices and Systems, 151(3), 265-268.
- Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings Circuits Devices and Systems, 151(3), 203-206.
- Advances in power semiconductor devices.. Microelectron. J., 35, 223-223.
- A novel double RESURF LDMOS for HVIC's. Microelectronics Journal, 35(3), 305-310.
- Progress in MOS-controlled bipolar devices and edge termination technologies. Microelectronics Journal, 35(3), 235-248.
- Analysis and optimisation of the trench gated emitter switched thyristor. Solid State Electronics, 48(12), 2207-2211.
- Creativity - A Catalyst for Technological Innovation. IEEE International Engineering Management Conference, 291-295.
- A Fast Switching Segmented Anode NPN Controlled LIGBT. IEEE Electron Device Letters, 24(11), 701-703.
- A high performance RF LDMOSFET in thin film SOI technology with step drift profile. Solid State Electronics, 47(11), 1937-1941.
- Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET). IEEE Electron Device Letters, 23(12), 725-727.
- Striped anode engineering: A concept for fast switching power devices. Solid State Electronics, 46(6), 903-909.
- High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. Applied Physics Letters, 80(12), 2192-2194.
- Growth of precursors in silicon using pseudopotential calculations.. Phys Rev Lett, 88(8), 085501.
- Analysis of the breakdown voltage in SOI and SOS technologies. Solid State Electronics, 46(2), 255-261.
- A study of fully coordinated precursors in silicon using the Ackland potential. Physica B Condensed Matter, 304(1-4), 483-488.
- A segmented anode, npn controlled lateral insulated gate bipolar transistor. Solid State Electronics, 45(7), 1055-1058.
- Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip. Microelectronics Journal, 32(5-6), 527-536.
- Radial confinement in lateral power devices. Microelectronics Journal, 32(5-6), 481-484.
- A novel metal field plate edge termination for power devices. Microelectronics Journal, 32(4), 323-326.
- The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology. Solid-State Electronics, 45(1), 71-77.
- A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.. Microelectron. Reliab., 41, 169-177.
- Investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies. Microelectronics Journal, 32(2), 121-126.
- Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices. Solid State Electronics, 45(1), 127-132.
- A novel trench clustered insulated gate bipolar transistor (TCIGBT). IEEE ELECTR DEVICE L, 21(12), 613-615.
- Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications. Solid State Electronics, 44(10), 1869-1873.
- 1200 V fully implanted JI technology. Electronics Letters, 36(18), 1587-1589.
- A novel area efficient floating field limiting ring edge termination technique. Solid-State Electronics, 44(8), 1381-1386.
- Radial confinement: Concept for lateral power devices. Electronics Letters, 36(14), 1242-1244.
- Local charge control technique to improve the forward bias safe operating area of LIGBT. Solid State Electronics, 44(7), 1213-1218.
- The Kirk effect in the DELDI technology. Microelectronics Journal, 31(3), 175-185.
- Luminescent chemically-etched porous polycrystalline silicon on insulating substrates. Journal of Electronic Materials, 29(8), 1033-1037.
- Novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT). IEEE Electron Device Letters, 20(11), 580-582.
- Design of novel high side power MOSFET based on HVIC process. Electronics Letters, 35(21), 1880-1881.
- Planar self-interstitial in silicon. Physical Review Letters, 83(9), 1799-1801.
- Turn-On Characteristics of Polycrystalline Silicon TFT's - Impact of Hydrogenation and Channel Length. IEEE Electron Device Letters, 20(2), 80-82.
- A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology. International Journal of Electronics, 86(10), 1169-1178.
- A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor. Solid-State Electronics, 43(10), 1845-1853.
- Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
- Polycrystalline silicon thin film transistor incorporating a semi-insulating field plate for high voltage circuitry on glass. Applied Physics Letters, 71(14), 2002-2004.
- Novel lateral MOS controlled power devices and technologies for high voltage integrated circuits. Solid State Phenomena, 55, 51-53.
- Double resurf technology for HVICs. Electronics Letters, 32(12), 1092-1093.
- Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications. Thin Solid Films, 270(1-2), 517-521.
- npn
controlled lateral insulated gate bipolartransistor. Electronics Letters, 31(23), 2045-2047.
- Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications. Microelectronic Engineering, 28(1-4), 451-454.
- A CMOS compatible lateral emitter switched thyristor with enhanced turn-on capability. IEEE Electron Device Letters, 15(11), 482-484.
- CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors. IEEE Transactions on Electron Devices, 40(10), 1880-1883.
- Monolithic integration of 5 V CMOS and high-voltage devices. IEEE Electron Device Letters, 13(11), 575-577.
- Analysis of CMOS-compatible lateral insulated base transistors. IEEE Transactions on Electron Devices, 38(7), 1624-1632.
- Analysis of n-channel MOS-controlled thyristors. IEEE Transactions on Electron Devices, 38(7), 1612-1618.
- Simulation of reverse breakdown in planar P-N junctions. Solid State Electronics, 34(9), 983-993.
- Static CMOS latch-up considerations in HVIC design. IEEE Journal of Solid-State Circuits, 25(2), 613-616.
- A novel double p-well lateral emitter switched thyristor. 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299), 1047-1050.
Conference proceedings
- Performance of 1.2 kV Field Stop Trench Clustered IGBTs in a Hybrid Power Switch Configuration. 2025 17th International Seminar on Power Semiconductors (ISPS) (pp 1-4), 27 August 2025 - 29 August 2025.
- Evaluation of a 650 V Hybrid Power Switch Combining GaN Si SiC Technologies. Pcim Europe Conference Proceedings (pp 179-184)
- Evaluation of a 3 kV polarization superjunction GaN HEMT. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings (pp 549-556). Nürnberg, Germany, 11 June 2024 - 11 June 2024. View this article in WRRO
- Evaluation of a hybrid power switch based on trench clustered IGBT and SiC MOSFET. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp 2601-2606). Nürnberg, Germany, 11 June 2024 - 11 June 2024. View this article in WRRO
- Impact of Super Junction Concepts in Silicon and Wide Bandgap Semiconductors. ISPS'23 Proceedings (pp 24-27)
- Compact GaN-based Bidirectional Polarization Super Junction HFETs with Schottky Gate on Sapphire. ISPS'23 Proceedings (pp 137-143)
- Evaluation of Characteristics and Turn-off dV/dt Controllability of 1.2 kV SiC Si Hybrid Power Switch. ISPS'23 Proceedings (pp 55-61)
- Development of Current Limiting Ultra-Fast Solid-State Circuit Breakers. IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society (pp 1-6), 13 October 2021 - 16 October 2021.
- Performance Comparison of Scaled IGBTs and CIGBTs. Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials, 6 September 2021 - 9 September 2021.
- Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) (pp 1319-1324). Singapore, Singapore, 24 May 2021 - 27 May 2021.
- A simple approach to improve the switching performance of cascode GaNFETs. 2020 8th International Conference on Power Electronics Systems and Applications (PESA). Hong Kong, China, 7 December 2020 - 7 December 2020. View this article in WRRO
- Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications. ISPS'21 Proceedings (pp 113-115)
- Dynamic avalanche free super junction-TCIGBT for high power density operation. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vienne, Austria, 13 September 2020 - 18 September 2020.
- Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation. Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM) (pp 12.3.1-12.3.4). San Francisco, CA, USA, 7 December 2019 - 7 December 2019. View this article in WRRO
- 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13 September 2020 - 18 September 2020.
- High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. Pcim Asia 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management Proceedings (pp 176-180)
- Analysis of Voltage Source Converters Under DC Line-to-Line Short-Circuit Fault Conditions. Electric Machines and Drives Conference (IEMDC), 2017 IEEE International (pp 1801-1806). Miami, FL, 21 May 2017 - 21 May 2017. View this article in WRRO
- Analysis of voltage source converters under DC line-to-line short-circuit fault conditions. 2017 IEEE International Electric Machines and Drives Conference (IEMDC) (pp 1-7), 21 May 2017 - 24 May 2017.
- Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch. Industrial Electronics (ISIE), 2017 IEEE 26th International Symposium on (pp 612-615). Edinburgh, UK, 19 June 2017 - 19 June 2017. View this article in WRRO
- Reliability Study and Modelling of IGBT Press-Pack Power Modules. 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) (pp 2711-2717)
- Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis. Japanese Journal of Applied Physics, Vol. 56(4S), 26 September 2016 - 29 September 2016.
- Impact of Poly-Crystalline Diamond within Power Semiconductor Device Modules in a Converter. 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
- Influence of Cassette Design upon Breakdown Performance of a 4.5kV Press-pack IGBT Module. 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) (pp 6 .-6 .)
- Short-circuit protection of power converters with SiC current limiters. 2016 IEEE Energy Conversion Congress and Exposition (ECCE) (pp 1-6), 18 September 2016 - 22 September 2016.
- The world's first high voltage GaN-on-diamond power devices. 2015 45th European Solid State Device Research Conference (ESSDERC) (pp 126-129), 14 September 2015 - 18 September 2015.
- Next generation 1200V trench CIGBT for high voltage applications. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp 33-36), 10 May 2015 - 14 May 2015.
- The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship. 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 1266-1269), 15 March 2015 - 19 March 2015.
- 2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp 245-248), 15 June 2014 - 19 June 2014.
- A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
- Thermal cycling reliability of polycrystalline diamond and aluminium nitride substrates. 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (pp 128-132), 18 June 2014 - 20 June 2014.
- Enhanced short-circuit performance of 3.3kV clustered insulated gate bipolar transistor (CIGBT) in NPT technology with RTA anode. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 169-172)
- GaN-based bidirectional super HFETs using polarization junction concept on insulator substrate. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 265-268)
- Evaluation of 1.2kV Super Junction Trench-Gate Clustered Insulated Gate Bipolar Transistor (SJ-TCIGBT). 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 92-95)
- GaN Based Super HFETs over 700V Using the Polarization Junction Concept. 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 280-283)
- An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices. Proceedings of the IEEE Bipolar Bicmos Circuits and Technology Meeting (pp 198-205)
- Novel, 100V, trench super junction high voltage TFTs using low temperature poly crystalline silicon. Technical Digest International Electron Devices Meeting Iedm (pp 8.7.4)
- Performance of a trench PMOS gated, planar, 1.2 kV clustered insulated gate bipolar transistor in NPT technology. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 164-167)
- Experimental demonstration of a vertical LOCOS insulated base transistor. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 235-238)
- An Analysis on Turn-off Behaviour of 1.2kV NPT-CIGBT under Clamped Inductive Load Switching. 2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 (pp 43-47)
- Experimental demonstration of 3.3kV planar CIGBT in NPT technology. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 48-51)
- A study of the influence of technology on the negative gate capacitance in 1.2kV IGBTs. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 177-180)
- ISPSD `07 Best Paper Award; Record-Low On-Resistance for 0.35 μm based Integrated XTREMOSTM Transistors. 2008 20th International Symposium on Power Semiconductor Devices and IC's (pp 1-3), 18 May 2008 - 22 May 2008.
- Record-low on-Resistance for 035 um based integrated XtreMOSTM Transistors. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 57-60)
- RESURFed quasi lateral IGBT structure for high current PICs. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 245-248)
- RC-TCIGBT: A reverse conducting trench clustered IGBT. PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (pp 161-164)
- Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology. 2006 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION, VOLS 1-3 (pp 275-278)
- XtreMOS™: The first integrated power transistor breaking the silicon limit. Technical Digest International Electron Devices Meeting Iedm
- Experimental demonstration of a 1.2kV trench clustered insulated gate bipolar transistor in non punch through technology. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 185-188)
- Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 119-122)
- Zero voltage switching of a 1200V PT clustered insulated gate bipolar transistor. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 263-266)
- Technology strategy - A powerful instrument to generate and sustain competitive advantage in power microelectronics. IEEE International Engineering Management Conference, Vol. 1 (pp 358-362)
- Potential of high-k dielectrics for lateral power and high voltage devices. Proceedings of the International Conference on Microelectronics, Vol. 24 I (pp 129-132)
- Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT. Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's (pp 285-287), 27 May 2004 - 27 May 2004.
- Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT). IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 269-272)
- Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 241-244)
- Human Aspect of Rapid Product Commercialization in Power Microelectronics. IEEE International Engineering Management Conference (pp 247-251)
- 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 345-348)
- Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 299-302)
- Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 216-219)
- Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium Proceedings, Vol. 716 (pp 317-323)
- Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics Proceedings ICSE (pp 314-318)
- Progress in silicon RF Power MOS technologies-current and future trends. ICCDCS 2002 4th IEEE International Caracas Conference on Devices Circuits and Systems
- Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
- Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
- Characterisation of dual gate lateral inversion layer emitter transistor. IEE Conference Publication(487) (pp 557-561)
- The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
- Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor. IEE Proceedings - Circuits, Devices and Systems, Vol. 148(2) (pp 79-79)
- Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
- A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 323-326)
- Self-interstitial clusters in silicon. Materials Research Society Symposium Proceedings, Vol. 610 (pp B11.3.5)
- Floating body induced transient characteristics in polycrystalline silicon TFTs. Materials Research Society Symposium Proceedings, Vol. 609 (pp A2841-A2846)
- Novel area efficient edge termination technique for planar, MOS controlled power devices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3975
- The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 349-352)
- A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 173-181)
- Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 185-187)
- Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
- Clustered IGBT - a new power semiconductor device. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3975
- Structure sensitive hydrogenation effects in polysilicon high voltage thin film transistors. Materials Research Society Symposium Proceedings, Vol. 557 (pp 635-640)
- The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium Digest(104) (pp 75-79)
- Stepped Gate Polysilicon Thin Film Transistor for Large Area Power Applications. MRS Proceedings, Vol. 507
- Stepped Gate Polysilicon Thin-Film Transistor for Large Area Power Applications. MRS Proceedings, Vol. 508
- The Impact of Field Plate Resistivity on the Performance of a Novel High Voltage Thin Film Transistor Incorporating a Semi-Insulating Layer. MRS Proceedings, Vol. 467
- A Semi-Insulating Layer for Novel High Voltage Polysilicon Thin Film Transistors. MRS Proceedings, Vol. 377
- Investigation of novel high voltage polysilicon thin film transistors (pp 605-608)
- A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid State Device Research Conference (pp 521-524)
- Influence of lattice temperature on SOI MOSFET's output characteristics. IEE Colloquium Digest(64) (pp 8/4)
- High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 686-689). New Orleans, LA, USA, 15 March 2020 - 15 March 2020. View this article in WRRO
- A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
- Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology. 2006 IEEE International Symposium on Power Semiconductor Devices & IC's (pp 1-4)
- Fully Isolated High Side and Low Side LIGBTs in Junction Isolation Technology. 2006 IEEE International Symposium on Power Semiconductor Devices & IC's (pp 1-4)
- Interaction between monolithically integrated JI-LIGBTs under Clamped Inductive Switching. Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. (pp 119-122)
- Dual gate lateral inversion layer emitter transistor. Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics (pp 37-37)
- Degradation behaviour of polysilicon high voltage thin film transistors. Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) (pp 219-222)
- Novel dual gate high voltage TFT with variable doping slot. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 155-158)
- Innovation and competition: are they crucial in power semiconductor industry? A market perspective. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 7-13)
- The accumulation enhanced emitter switched thyristor - a novel area efficient power semiconductor device. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 151-154)
- A novel 'cool' insulated base transistor. 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) (pp 313-316)
- Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs. 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) (pp 108-111)
- A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 123-125)
- Analyses of a COOL-MOSFET. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 131-134)
- Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 63-66)
- The trench planar insulated gate bipolar transistor (TPIGBT). CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 51-54)
- A novel dual gated lateral MOS-bipolar power device. 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) (pp 261-264)
- A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance. International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (pp 273-276)
- A new lateral insulated base emitter switched thyristor. Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) (pp 221-224)
- A novel thin film transistor for high voltage circuitry on glass. Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (pp 321-324)
- A novel multi-channel approach to improve LIGBT performance. Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (pp 313-316)
- A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology. Proceedings of Second International Conference on Power Electronics and Drive Systems, Vol. 1 (pp 72-77)
- Performance of LIGBTs built on SIMOX substrates using double epitaxial layer dielectric isolation technology. Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (pp 218-223)
- A new double epitaxial layer dielectric isolation technology for HVICs. [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs (pp 113-118)
- A study of the resurf principle for thin epitaxial layer high voltage integrated circuits. Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics (pp 172-175)
- Performance of 200 V CMOS compatible auxiliary cathode lateral insulated gate transistors. [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs (pp 103-108)
- CMOS compatible 250 V lateral insulated base transistors. [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs (pp 181-186)
- A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure. Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. (pp 102-107)
- International Symposium on Power Semiconductors & ICs. International Symposium on Power Semiconductors and ICs
Preprints
- Evaluation of a 1200 V polarization super junction GaN field-effect transistor in cascode configuration. Electronics, 14(3). View this article in WRRO
- Professional activities and memberships
-
- Rolls-Royce/Royal Academy of Engineering Research Chair