Professor Shankar Madathil

Staff Photo

Contact Details

s.madathil@sheffield.ac.uk

Tel: +44 (0)114 22 25856

ORCID: 0000-0001-6832-1300

Qualifications

  • PhD (Engineering), University of Cambridge 1992
  • MTech (Physical Engineering), Indian Institute of Science, Bangalore 1986
  • MSc (Applied Sciences), PSG College of Technology, India 1984
  • BSc (Applied Sciences), PSG College of Technology, India 1982

Research Activities

  • Power semiconductor devices and technologies
  • High temperature power electronics
  • Active gate drive technologies
  • High power density converters
  • Power integrated circuits for lighting, automotive and switched mode power supplies
  • High voltage thin film transistors and integration aspects
  • Modelling of power semiconductor devices and technologies
  • New concepts for semiconductor devices and technologies
  • Power semiconductor devices and technologies for harsh environments
  • Wide band gap power semiconductor devices and technologies
  • Nano technologies for power electronic applications

Responsibilities

  • Rolls-Royce/Royal Academy of Engineering Research Chair
Profile

Prof Shankar N Ekkanath Madathil@E.M. Sankara Narayanan was a Royal Academy of Engineering Research Professor in Power Electronics (2007-12) and a Royal Society Industry Fellow of Rolls-Royce (2013-17). Between 1994 and 2007, he was the Founding Director of the Emerging Technologies Research Centre at De Montfort University, which he established to undertake research in microelectronics. Prior to that, he was elected as a Maudslay Engineering Research Fellow of Pembroke College, Cambridge. He completed his PhD in Cambridge University through support from Cambridge Nehru scholarship and has a Master’s degree in Semiconductor Technology and a Master’s degree in Materials Science.

He has more than three decades of proven track record in the field of power semiconductor devices and associated technologies and works with key supply chain partners world-wide. His group has already delivered world-leading innovative power semiconductor device solutions in Silicon (Si) and wide band gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC). His notable contributions include the Clustered IGBT concept in Silicon and Silicon Carbide; the first demonstration of 3 kV Intelligent Power Chip in Silicon, record low on-state resistance 100 V devices in Silicon, world first demonstration of high density 2 Dimensional Hole Gas in GaN and most recently, ground-breaking super-junction switching technologies in GaN. As PI/Co-I, he has successfully led projects to transfer innovative power device technologies to industry. He was an invited Fellow at the National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan in 2005 & 2007. He is a Visiting Professor and Vajra Faculty in IIT Bombay, India. Most recently, he has been offered short-term Invitation Fellowship by Japanese Society of Promotion of Sciences to spend two months at Kyushu University in Japan.

He is an editor of IEEE – Transactions in Electron Devices, IEEE - Transactions in Devices and Materials Reliability, Proceedings of the Royal Society – Mathematical, Physical and Engineering Sciences and an associated editor of IET – Journal of Power Electronics. He is a Fellow of IET and IOP. Presently, he is involved as a Technical Program Committee member in various IEEE and premier conferences such as IEDM and ESSDERC/ESSIRC.