Professor John David

PhD, BEng

School of Electrical and Electronic Engineering

Personal Chair

j.p.david@sheffield.ac.uk
+44 114 222 5185

Full contact details

Professor John David
School of Electrical and Electronic Engineering

Profile: I obtained my BEng and PhD degrees in Electronic Engineering from the University of Sheffield in 1979 and 1983, respectively.

After that, I undertook a number of postdoctoral positions within the Department of Electronic & Electrical Engineering at Sheffield eventually managing the characterisation activities of the SERC Centre for III–V Semiconductors.

In 2001 I left to join Marconi Optical Components, Caswell before returning the following year as a Senior Lecturer.

In 2004 I became Professor of Semiconductor Materials and Devices, and between 2009 to 2013 served as Head of Department. Between 2002 -2004 I was a IEEE LEOS Distinguished Lecturer and I am currently a Fellow of the IEEE and IET.

My research is focussed in two areas;

on the characterisation of III-V semiconductor materials and devices, especially that containing Bismuth and
on the understanding and development of avalanche photodiodes. The addition to Bismuth offers a possible route to extend the wavelength of many optical structures such as photodiodes and solar cells.
I use characterisation techniques such as X-ray double crystal diffraction and photoluminescence to study semiconductor structures containing bulk and quantum wells of GaAsBi and , and then correlate this to current-voltage, capacitance-voltage and photocurrent spectra of fabricated devices.

I also study how under very high electric-fields, electrons and holes in a semiconductor gain energy and create further carriers through a process of impact ionisation. This process can lead to destructive breakdown in power electronic devices but can also be utilised to amplify weak optical signals, giving rise to avalanche photodiodes (APDs).

I study the theory behind the ionisation process via different modelling techniques and also look experimentally at the ionisation coefficients in different semiconductor materials and device structures.

The aim of my research is to develop APDs capable of operating at very high speeds for next generation telecommunication networks and also APDs that are very sensitive.

Qualifications

PhD (Semiconductors), University of Sheffield 1983
BEng (Electronics), University of Sheffield 1976

Research interests

-Impact Ionisation and breakdown in semiconductors
Photodiode and avalanche photodiodes
Bismuth containing alloys

Publications

Journal articles

Harun F, Richards RD & David JPR (2025) Capacitance-voltage characterization of GaAsBi/GaAs multiple quantum wells grown by molecular beam epitaxy. Journal of Physics: Conference Series, 3020. View this article in WRRO
Jin X, Zhao S, Craig AP, Tian Q, Gilder L, Yi X, Carmichael M, Golding T, Tan CH, Marshall ARJ & David JPR (2024) High-performance room temperature 2.75 µm cutoff In0.22Ga0.78As0.19Sb0.81/Al0.9Ga0.1As0.08Sb0.92 avalanche photodiode. Optica, 11(12), 1632-1638. View this article in WRRO
Liu Y, Jin X, Jung H, Lee S, Harun F, Ng JS, Krishna S & David JPR (2024) Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes. Applied Physics Letters, 125(22). View this article in WRRO
Kirdoda J, Mirza M, Smith C, Dumas D, Coughlan C, McCarthy C, Mowbray H, Fleming F, Yi X, Saalbach L , Muir D et al (2024) (Invited) Pseudo-Planar Ge-on-Si Avalanche Photodiodes in Geiger and Linear Modes for Short-Wave Infrared Detection. ECS Meeting Abstracts, MA2024-02(32), 2330-2330.
Tao X, Jin X, Gao S, Yi X, Liu Y, Rockett TBO, Bailey NJ, Harun F, Adham NA, Tan CH , Richards RD et al (2024) Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11(11), 4846-4853. View this article in WRRO
Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection. Communications Materials, 5(1). View this article in WRRO
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25). View this article in WRRO
Fleming F, Yi X, Mirza MMA, Jin X, Kirdoda J, Dumas DCS, Saalbach L, Modak M, Muir DAS, Smith C , Coughlan C et al (2024) Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise. Optics Express, 32(11). View this article in WRRO
Ronningen TJ, Kodati SH, Jin X, Lee S, Jung H, Tao X, Lewis HIJ, Schwartz M, Gajowski N, Martyniuk P , Guo B et al (2023) Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate. Applied Physics Letters, 123(13).
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH & David JPR (2023) Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31(20), 33141-33149. View this article in WRRO
Sreerag SJ, Sharma AS, Rockett TBO, David JPR, Richards RD & Kini RN (2023) Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode. Applied Physics A, 129(8).
Campbell JC, David JPR & Bank SR (2023) Sb-based low-noise avalanche photodiodes. Photonics, 10(7). View this article in WRRO
Lewis HIJ, Jin X, Guo B, Lee S, Jung H, Kodati SH, Liang B, Krishna S, Ong DS, Campbell JC & David JPR (2023) Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.. Scientific Reports, 13. View this article in WRRO
Jung H, Lee S, Liu Y, Jin X, David JPR & Krishna S (2023) High electric field characteristics of GaAsSb photodiodes on InP substrates. Applied Physics Letters, 122(22). View this article in WRRO
Singh R, O'Farrell T, Biagi M, Penty RV & David JPR (2023) Vector coding optical wireless links. Journal of Lightwave Technology, 41(17), 5577-5587. View this article in WRRO
Batool Z, Hild K, Marko I, Mohmad AR, David JPR, Lu X, Tiedje T & Sweeney SJ (2023) Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures. Journal of Materials Science: Materials in Electronics, 34(6).
Lee S, Jin X, Jung H, Lewis H, Liu Y, Guo B, Kodati SH, Schwartz M, Grein C, Ronningen TJ , David JPR et al (2023) High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes. Optica, 10(2). View this article in WRRO
Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm. Materials Science in Semiconductor Processing, 153, 107135-107135.
Bui T-C, Singh R, O'Farrell T, Scarano G, David JPR & Biagi M (2022) Optimized multi-primary modulation for visible light communication. Journal of Lightwave Technology, 40(22), 7254-7264. View this article in WRRO
Lee HJ, Gamel MMA, Ker PJ, Jamaludin MZ, Wong YH & David JPR (2022) Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects. Journal of Electronic Materials, 51(11), 6082-6107.
Rockett TBO, Adham NA, Harun F, David JPR & Richards RD (2022) Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods. Journal of Crystal Growth, 589. View this article in WRRO
Bailey NJ, Carr MR, David JPR & Richards RD (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. View this article in WRRO
Guo B, Jin X, Lee S, Ahmed SZ, Jones AH, Xue X, Liang B, Lewis HIJ, Kodati SH, Chen D , Ronningen TJ et al (2022) Impact Ionization Coefficients of Digital Alloy and Random Alloy Al_0.85Ga_0.15As_0.56Sb_0.44 in a Wide Electric Field Range. Journal of Lightwave Technology, 40(14), 4758-4764.
Bailey NJ, Rockett TBO, Flores S, Reyes DF, David JPR & Richards RD (2022) Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling.. Scientific Reports, 12. View this article in WRRO
Ong DS, Tan AH, Choo KY, Yeoh KH & David JPR (2022) Weibull-Fréchet random path length model for avalanche gain and noise in photodiodes. Journal of Physics D: Applied Physics, 55(6), 065105-065105.
Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker DL, Tan CH , Ong DS et al (2022) Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 28(2: Optical Detectors), 1-8.
Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12(1). View this article in WRRO
Lewis HIJ, Qiao L, Cheong JS, Baharuddin ANAP, Krysa AB, Ng BK, Green JE & David JPR (2021) Impact Ionization Coefficients in (Al_xGa_1-x)_0.52In_0.48P and Al_xGa_1-xAs Lattice-Matched to GaAs. IEEE Transactions on Electron Devices, 68(8), 4045-4050.
Richards RD, Harun F, Nawawi MRM, Liu Y, Rockett TBO & David JPR (2021) Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour. Journal of Physics D: Applied Physics, 54(19). View this article in WRRO
Gamel MMA, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David JPR & Jamaludin MZ (2021) Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm. Scientific Reports, 11(1). View this article in WRRO
Ahmed J, Xie S, Liang B, Yi X, Jin X, Kesaria M, David JPR & Huffaker DL (2021) Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability. IEEE Journal of Quantum Electronics, 57(2), 1-6.
L. H, C. J, B. M, A. A, R. S, M.H. J, J.P.R. D & A.R. M (2020) Photoluminescence and Raman Scattering of GaAs1-xBix Alloy. Sains Malaysiana, 49(10), 2559-2564.
Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35(9). View this article in WRRO
Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics, 13(10), 683-686. View this article in WRRO
Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marín N, David JPR & González D (2019) Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies. Applied Surface Science, 485, 29-34. View this article in WRRO
Hossain MM, David JPR & Hayat MM (2019) Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes. Journal of Lightwave Technology, 37(13), 3315-3323.
Singh R, O’Farrell T, Biagi M & David JPR (2018) Coded color shift keying with frequency domain equalization for low complexity energy efficient indoor visible light communications. Physical Communication, 31, 160-168.
Richards RD, Rockett TBO, Nawawi MRM, Harun F, Mellor A, Wilson T, Christou C, Chen S & David JPR (2018) Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology, 33(9). View this article in WRRO
Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8(1).
Qiao L, Dimler SJ, Baharuddin ANAP, Green JE & David JPR (2018) An excess noise measurement system for weak responsivity avalanche photodiodes. Measurement Science and Technology, 29(6). View this article in WRRO
Wilson T, Hylton NP, Harada Y, Pearce P, Alonso-Álvarez D, Mellor A, Richards RD, David JPR & Ekins-Daukes NJ (2018) Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi.. Scientific Reports, 8(1). View this article in WRRO
Beling A, David J, Hutchinson M, Schow C & Shi J-W (2018) Guest Editorial: Introduction to the Special Issue on Optical Detectors. IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-3.
Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ & David JPR (2017) Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices. Solar Energy Materials and Solar Cells, 172, 238-243. View this article in WRRO
Hossain MM, Ray S, Cheong JS, Qiao L, Baharuddin ANAP, Hella MM, David JPR & Hayat MM (2017) Low-Noise Speed-Optimized Large Area CMOS Avalanche Photodetector for Visible Light Communication. Journal of Lightwave Technology, 35(11), 2315-2324.
Cheong JS, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2017) Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164, 28-31. View this article in WRRO
Xie S, Kim H, Lee W-J, Farrell AC, David JP & Huffaker DL (2016) InAs/InAsP Core/shell Nanowire Photodiode on a Si Substrate. Nano Advances.
Jamil E, Cheong JS, David JPR & Hayat MM (2016) On the analytical formulation of excess noise in avalanche photodiodes with dead space. Optics Express, 24(19), 21597-21608. View this article in WRRO
Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) Avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 quaternary alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
Balanta MAG, Kopaczek J, Orsi Gordo V, Santos BHB, Rodrigues AD, Galeti HVA, Richards RD, Bastiman F, David JPR, Kudrawiec R & Galvão Gobato Y (2016) Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells. Journal of Physics D: Applied Physics, 49(35). View this article in WRRO
David J (2016) The staircase photodiode. Nature Photonics, 10(6), 364-366.
Auckloo A, Cheong JS, Meng X, Tan CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) High-Gain InAs Planar Avalanche Photodiodes. Journal of Lightwave Technology, 34(11). View this article in WRRO
Qiao L, Cheong JS, Ong JSL, Ng JS, Krysa AB, Green JE & David JPR (2015) Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Letters, 28(4), 481-484. View this article in WRRO
Cheong JS, Ng JS, Krysa AB, Ong JSL & David JPR (2015) Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48(40). View this article in WRRO
Thomas T, Mellor A, Hylton NP, Führer M, Alonso-Álvarez D, Braun A, Ekins-Daukes NJ, David JPR & Sweeney SJ (2015) Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell. Semiconductor Science and Technology, 30(9), 094010-094010.
White BS, Sandall IC, David JPR & Tan CH (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62(9), 2928-2932. View this article in WRRO
Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D & David JPR (2015) MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization. Journal of Crystal Growth, 425, 237-240. View this article in WRRO
Mohmad AR, Bastiman F, Hunter CJ, Harun F, Reyes DF, Sales DL, Gonzalez D, Richards RD, David JPR & Majlis BY (2015) Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures. Semiconductor Science and Technology, 30(9), 094018-094018.
Richards RD, Bastiman F, Walker D, Beanland R & David JPR (2015) Growth and structural characterization of GaAsBi/GaAs multiple quantum wells. Semiconductor Science and Technology, 30(9), 094013-094013.
Kopaczek J, Linhart WM, Baranowski M, Richards RD, Bastiman F, David JPR & Kudrawiec R (2015) Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study. Semiconductor Science and Technology, 30(9), 094005-094005.
Zhou Z, Mendes DF, Richards RD, Bastiman F & David JPR (2015) Absorption properties of GaAsBi based p–i–n heterojunction diodes. Semiconductor Science and Technology, 30(9), 094004-094004.
Jeng Shiuh Cheong , Hayat MM, Xinxin Zhou & David JPR (2015) Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients. IEEE Transactions on Electron Devices, 62(6), 1946-1952.
Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) InAs/GaSb Type-II Superlattice for Radiation Thermometry. IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
Kudrawiec R, Kopaczek J, Polak MP, Scharoch P, Gladysiewicz M, Misiewicz J, Richards RD, Bastiman F & David JPR (2014) Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells. Journal of Applied Physics, 116(23).
Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
Singh R, O'Farrell T & David J (2014) An Enhanced Colour Shift Keying Modulation Scheme for High Speed Wireless Visible Light Communications. Journal of Lightwave Technology, 32(14), 2582-2592. View this article in WRRO
Mohmad AR, Bastiman F, Hunter CJ, Richards RD, Sweeney SJ, Ng JS, David JPR & Majlis BY (2014) Localization effects and band gap of GaAsBi alloys. Physica Status Solidi B Basic Research, 251(6), 1276-1281.
Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) Demonstration of InAsBi photoresponse beyond 3.5 μ m. Applied Physics Letters, 104(17).
Cheong JS, Ong J, Ng JS, Krysa A & David JP (2014) Al0.52In0.48P SAM-APD as a Blue-Green Detector. IEEE Journal of Selected Topics in Quantum Electronics, 20(6), 142-146.
Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9.
Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS & David JPR (2014) Molecular beam epitaxy growth of GaAsBi using As2 and As 4. Journal of Crystal Growth, 390, 120-124.
Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electron Devices, 61(3), 838-843.
Ong JSL, Ng JS, Krysa AB & David JPR (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al_0.52In_0.48P. JOURNAL OF APPLIED PHYSICS, 115(6).
El-Howayek G, Zhang C, Li Y, Ng JS, David JPR & Hayat MM (2014) On the Use of Gaussian Approximation in Analyzing the Performance of Optical Receivers. IEEE PHOTONICS JOURNAL, 6(1).
Reyes DF, Bastiman F, Hunter CJ, Sales DL, Sanchez AM, David JPR & González D (2014) Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures. Nanoscale Research Letters, 9(1), 1-8.
Reyes DF, Gonzalez D, Bastiman F, Dominguez L, Hunter CJ, Guerrero E, Roldan MA, Mayoral A, David JPR & Sales DL (2013) Photoluminescence Enhancement of InAs(Bi) Quantum Dots by Bi Clustering. APPLIED PHYSICS EXPRESS, 6(4).
Dominguez L, Reyes DF, Bastiman F, Sales DL, Richards RD, Mendes D, David JPR & Gonzalez D (2013) Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy. APPLIED PHYSICS EXPRESS, 6(11).
Tan SL, Soong WM, Green JE, Steer MJ, Zhang S, Tan LJJ, Ng JS, Marko IP, Sweeney SJ, Adams AR , Allam J et al (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103(10).
Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
Richards R, Bastiman F, Hunter CJ, Mohmad AR, David JPR & Ekins-Daukes N (2013) GaAsBi MQWs for multi-junction photovoltaics. Conference Record of the IEEE Photovoltaic Specialists Conference, 303-305.
Ker PJ, David JPR & Tan CH (2012) Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Optics Express, 20(28), 29568-29576.
Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ & David JPR (2012) Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), 2191-2194.
Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates. Proceedings of SPIE the International Society for Optical Engineering, 8541.
Green JE, David JPR & Tozer RC (2012) A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes. Measurement Science and Technology, 23(12).
Green JE, Tozer RC & David JPR (2012) Stability in Small Signal Common Base Amplifiers. IEEE Transactions on Circuits and Systems.
Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS & David JPR (2012) Effects of rapid thermal annealing on GaAs 1-xBi x alloys. Applied Physics Letters, 101(1).
Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452.
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement. IEEE Transactions on Electron Devices, 59(4), 1030-1036.
Ivanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, Hongpinyo V, Vines P, David JPR & Ooi BS (2012) Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors. Journal of Physics Conference Series, 356(1).
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth.
Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Technology Letters, 24(3), 218-220.
Tan SL, Hunter CJ, Zhang S, Tan LJJ, Goh YL, Ng JS, David JPR, Marko IP, Sweeney SJ, Adams AR & Allam J (2012) Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors. Journal of Electronic Materials, 1-9.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth, 341(1), 19-23.
Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 310-313.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2012) Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys. Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 259-261.
Bastiman F, Mohmad ARB, Ng JS, David JPR & Sweeney SJ (2011) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
Hasbullah NF & David JPR (2011) Reverse leakage current mechanisms in quantum dot laser structures. 2011 IEEE Regional Symposium on Micro and Nanoelectronics Rsm 2011 Programme and Abstracts, 32-35.
Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.. Opt Express, 19(23), 23341-23349.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact ionization coefficients in Al0.52In0.48P. IEEE Electron Device Letters, 32(11), 1528-1530.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE J QUANTUM ELECT, 47(8), 1123-1128.
Mohmad AR, Bastiman F, Hunter CJ, Ng JS, Sweeney SJ & David JPR (2011) The effect of Bi composition to the optical quality of GaAs1-xBix. APPL PHYS LETT, 99(4).
Hasbullah NF, David JPR & Mowbray DJ (2011) Effect of modulation p-doping on the optical properties of quantum dot laser structure. Aip Conference Proceedings, 1328, 136-138.
Hasbullah NF, David JPR & Mowbray DJ (2011) Dark current mechanisms in quantum dot laser structures. J APPL PHYS, 109(11).
Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ & Allam J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications. IEEE ELECTR DEVICE L, 32(7), 919-921.
Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE J QUANTUM ELECT, 47(6), 858-864.
Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors. Infrared Physics and Technology, 54(3), 228-232.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods. IEEE J QUANTUM ELECT, 47(5), 607-613.
Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2011) Photoluminescence investigation of high quality GaAs1-xBix on GaAs. APPL PHYS LETT, 98(12).
Ong DSG, Hayat MM, David JPR & Ng JS (2011) Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes. IEEE Photonics Technology Letters, 23(4), 233-235.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47(2), 190-197.
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
Tan LJJ, Soong WM, David JPR & Ng JS (2011) Dark current mechanism in bulk GaInNAs lattice matched to GaAs. IEEE Transactions on Electron Devices, 58(1), 103-106.
Hasbullah NF, Hopkinson M, Alexander RR, Hogg RA, David JPR, Badcock TJ & Mowbray DJ (2010) Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
Marshall ARJ, David JPR & Tan CH (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57(10), 2631-2638.
Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
Rees GJ & David JPR (2010) Nonlocal impact ionization and avalanche multiplication. Journal of Physics D Applied Physics, 43(24).
Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571.
Sanchez AM, Beanland R, Hasbullah NF, Hopkinson M & David JPR (2009) Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures. J APPL PHYS, 106(2).
Ong DSG, Ng JS, Hayat MM, Sun P & David JPR (2009) Optimization of InP APDs for High-Speed Lightwave Systems. J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE PHOTONIC TECH L, 21(13), 866-868.
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85.
Loh WS, Goh EZJ, Vassilevski K, Nikitina I, David JPR, Wright NG & Johnson CM (2008) Impact ionization in ion implanted 4H-SiC photodiodes. Materials Research Society Symposium Proceedings, 1069, 245-250.
Beanland R, David JPR & Sanchez AM (2008) Quantum dots in strained layers-preventing relaxation through the precipitate hardening effect. Journal of Applied Physics, 104(12).
Tan LJJ, Ng JS, Tan CH & David JPR (2008) Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. APPL PHYS LETT, 93(11).
Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM & David JPR (2008) Impact ionization coefficients in 4H-SiC. IEEE T ELECTRON DEV, 55(8), 1984-1990.
Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. J APPL PHYS, 104(1).
David JPR & Tan CH (2008) Material considerations for avalanche photodiodes (Invited paper). IEEE J SEL TOP QUANT, 14(4), 998-1009.
Buller GS, Warburton RE, Pellegrini S, Ng JS, David JPR, Tan LJJ, Krysa AB & Cova S (2007) Single-photon avalanche diode detectors for quantum key distribution. IET OPTOELECTRONICS, 1(6), 249-254.
Groves C & David JPR (2007) Effects of Ionization Velocity and Dead Space on Avalanche Photodiode Bit Error Rate.. IEEE Trans. Commun., 55, 2033-2033.
Aivaliotis P, Vukmirovic N, Zibik EA, Cockburn JW, Indjin D, Harrison P, Groves C, David JPR, Hopkinson M & Wilson LR (2007) Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors. J PHYS D APPL PHYS, 40(18), 5537-5540.
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
Tan CH, Ng JS, Rees GJ & David JPR (2007) Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs. J APPL PHYS, 101(6).
Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M, Priestley N, Teoh YP & Dunn GM (2007) Double transit region Gunn diodes. SEMICOND SCI TECH, 22(3), 245-248.
Ng JS, Tan CH, Rees GJ & David JPR (2007) Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
Groves C & David JPR (2007) Effects of ionization velocity and dead space on avalanche photodiode bit error rate. IEEE T COMMUN, 55(11), 2152-2158.
Dimler SJ, Ng JS, Tozer RC, Rees GJ & David JPR (2007) Capacitive quenching measurement circuit for Geiger-mode avalanche photodiodes. IEEE J SEL TOP QUANT, 13(4), 919-925.
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.
Ng JS, Liu HY, Steer MJ, Hopkinson M & David JPR (2006) Photoluminescence beyond 1.5 mu m from InAs quantum dots. MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end. MEAS SCI TECHNOL, 17(7), 1941-1946.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and performance of an InGaAs-InP single-photon avalanche diode detector. IEEE J QUANTUM ELECT, 42(3-4), 397-403.
Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M & David JPR (2006) Room-temperature 1.6 mu m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J APPL PHYS, 99(4).
Bai J, Wang T, Comming P, Parbrook PJ, David JPR & Cullis AG (2006) Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. J APPL PHYS, 99(2).
Groves C & David JPR (2006) A physics-based model to predict bit error rate of an optical telecommunication system incorporating an avalanche photodiode that includes the effects of dead space and finite carrier velocity. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 859-860.
Massey DJ, David JPR & Rees GJ (2006) Temperature dependence of impact ionization in submicrometer silicon devices. IEEE Transactions on Electron Devices, 53(9), 2328-2334.
David JPR (2005) Low noise avalanche photodiodes. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2005, 369-370.
Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414.
Ng JS, Tan CH, David JPR & Rees GJ (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE T ELECTRON DEV, 52(7), 1527-1534.
Wang T, Raviprakash G, Ranalli F, Harrison CN, Bai J, David JPR, Parbrook PJ, Ao JP & Ohno Y (2005) Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. J APPL PHYS, 97(8).
Liu HY, Soong WM, Navaretti P, Hopkinson M & David JPR (2005) Enhanced optical and structural properties of 1.3 mu m GaInNAs/GaAs multiple quantum-well heterostructures with stepped strain-mediating layers. APPL PHYS LETT, 86(6).
Massey DJ, David JPR & Rees GJ (2005) Temperature dependence of avalanche multiplication in submicron silicon devices. Proceedings of Essderc 2005 35th European Solid State Device Research Conference, 2005, 245-248.
Groves C, Chia CK, Tozer RC, David JPR & Rees GJ (2005) Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs. IEEE J QUANTUM ELECT, 41(1), 70-75.
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2004) Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8×3″ multiwafer reactor for optoelectronic applications. Design and Nature, 6, 107-110.
Groves C, David JPR & Rees GJ (2004) Gain dependent avalanche duration and gain×bandwidth product in an avalanche photodiode. Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices Nusod 04, 30-31.
Groves C, Harrison CN, David JPR & Rees GJ (2004) Temperature dependence of breakdown voltage in AlxGa 1-xAs. Journal of Applied Physics, 96(9), 5017-5019.
Groves C, David JPR, Robson PN & Rees GJ (2004) Excess noise characteristics of single heterojunction AlxGa 1-xAs-GaAs avalanche photodiodes. Proceedings of SPIE the International Society for Optical Engineering, 5451, 426-433.
Liu HY, Sellers IR, Gutierrez M, Groom KM, Soong WM, Hopkinson M, David JPR, Beanland R, Badcock TJ, Mowbray DJ & Skolnick MS (2004) Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures. J APPL PHYS, 96(4), 1988-1992.
Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
Groves C, David JPR, Rees GJ & Ong DS (2004) Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes. Journal of Applied Physics, 95(11 I), 6245-6251.
Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) Impact ionization in submicron silicon devices. J APPL PHYS, 95(10), 5931-5933.
Hambleton PJ, David JPR & Rees GJ (2004) Enhanced carrier velocity to early impact ionization. Journal of Applied Physics, 95(7), 3561-3564.
Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
Hogg R, Groom KM, Liu HY, Sellers IR, Ray SK, Badcock T, Gutierrez M, Hopkinson M, Ng JS, R. David JP , Mowbray DJ et al (2004) Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) Improving optical properties of 1.55 mu m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. APPL PHYS LETT, 83(24), 4951-4953.
David J (2003) Low Noise Avalanche Photodiodes. Conference on Optical Fiber Communication Technical Digest Series, 86, 336-337.
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
Groves C, Ghin R, David JPR & Rees GJ (2003) Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50(10), 2027-2031.
Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE T ELECTRON DEV, 50(10), 2021-2026.
Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes. J APPL PHYS, 94(4), 2631-2637.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2003) Nonlocal effects in thin 4H-SiC UV avalanche photodiodes. IEEE T ELECTRON DEV, 50(8), 1724-1732.
Rees GJ & David JPR (2003) Why small avalanche photodiodes are beautiful. Proceedings of SPIE the International Society for Optical Engineering, 4999, 349-362.
Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
Groves C, David JPR & Rees GJ (2003) The effect of ionization threshold softness on the temperature dependence of the impact ionization coefficient. Semiconductor Science and Technology, 18(7), 689-692.
Hambleton PJ, Plimmer SA, David JPR & Rees GJ (2003) Time response modelling in submicron avalanche photodiodes. IEE Proceedings Optoelectronics, 150(2), 167-170.
Ong DS, Rees GJ & David JPR (2003) Avalanche speed in thin avalanche photodiodes. Journal of Applied Physics, 93(7), 4232-4239.
Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) Performance of thin 4H-SiC UV avalanche photodiodes. IEE PROCEEDINGS-OPTOELECTRONICS, 150(2), 187-190.
Yee M, Ng WK, David JPR, Houston PA & Harrison CN (2003) Negative temperature dependence of electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 82(8), 1224-1226.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2003) The effects of nonlocal impact lonization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50(2), 347-351.
Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC & Weiner M (2003) Demonstration of 4H-SiC avalanche photodiodes linear array. SOLID-STATE ELECTRONICS, 47(2), 241-245.
Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function. J LIGHTWAVE TECHNOL, 21(1), 155-159.
Harrison CN, David JPR, Hopkinson M & Rees GJ (2002) Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes. J APPL PHYS, 92(12), 7684-7686.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2002) Non-equilibrium modelling of avalanche photodiode speed. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2, 490-491.
Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE T ELECTRON DEV, 49(12), 2349-2351.
Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
Ng BK, Yan F, David JPR, Tozer RC, Rees GJ, Qin C & Zhao JH (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE PHOTONIC TECH L, 14(9), 1342-1344.
Jacob B, Robson PN, David JPR & Rees GJ (2002) Fokker-Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91(8), 5438-5441.
Ng JS, David JPR, Rees GJ & Allam J (2002) Avalanche breakdown voltage of In0.53Ga0.47As. J APPL PHYS, 91(8), 5200-5202.
Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
Ng BK, David JPR, Tozer RC, Hopkinson M, Hill G & Rees GJ (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524.
Yan F, Qin C, Zhao JH, Weiner M, Ng BK, David JPR & Tozer RC (2002) Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 degrees positive bevel. ELECTRON LETT, 38(7), 335-336.
Hambleton PJ, Plimmer SA, David JPR, Rees GJ & Dunn GM (2002) Simulated current response in avalanche photodiodes. Journal of Applied Physics, 91(3), 2107-2111.
Yee M, Houston PA & David JPR (2002) Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor. J APPL PHYS, 91(3), 1601-1605.
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, 131-136.
David JPR & Rees GJ (2001) Low noise avalanche photodiodes. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2, 693-694.
Ng BK, David JPR, Plimmer SA, Tozer RC, Rees GJ & Hopkinson M (2001) Al0.8Ga0.2As: A very low excess noise multiplication medium for avalanche photodiodes. IEE P-OPTOELECTRON, 148(5-6), 243-246.
Ng BK, David JPR, Plimmer SA, Rees GJ, Tozer RC, Hopkinson M & Hill G (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204.
Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
Jacob B, Robson PN, David JPR & Rees GJ (2001) Fokker-Planck model for nonlocal impact ionization in semiconductors. J APPL PHYS, 90(3), 1314-1317.
Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
Plimmer SA, David JPR, Jacob B & Rees GJ (2001) Impact ionization probabilities as functions of two-dimensional space and time. Journal of Applied Physics, 89(5), 2742-2751.
Ng BK, David JPR, Plimmer SA, Hopkinson M, Tozer RC & Rees GJ (2000) Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
Plimmer SA, David JPR & Ong DS (2000) The merits and limitations of local impact lonization theory. IEEE Transactions on Electron Devices, 47(5), 1080-1088.
Flimmer SA, David JPR, Grey R & Rees GJ (2000) Avalanche multiplication in AlxGa1-xAs (x = OtoO.60). IEEE Transactions on Electron Devices, 47(5), 1089-1097.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Plimmer SA, Chang KY & Roberts JS (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE T ELECTRON DEV, 47(5), 910-914.
Chia CK, David JPR, Plimmer SA, Rees GJ, Grey R & Robson PN (2000) Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures. J APPL PHYS, 88(5), 2601-2608.
Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
Plimmer SA, David JPR, Rees GJ & Robson PN (2000) Ionization coefficients in AlxGa1-xAs (x = 0-0.60). Semiconductor Science and Technology, 15(7), 692-699.
Ong DS, Li KF, Plimmer SA, Rees GJ, David JPR & Robson PN (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes. Journal of Applied Physics, 87(11), 7885-7891.
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA , Hopkinson M et al (2000) Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.. Phys Rev Lett, 84(4), 733-736.
Flimmer SA, David JPR, Ong DS & Li KF (1999) A simple model for avalanche multiplication including deadspace effects. IEEE Transactions on Electron Devices, 46(4), 769-775.
David JPR, Khoo EA, Pabla AS, Woodhead J, Grey R & Rees GJ (1999) Intracavity piezoelectric InGaAs/GaAs laser modulator. Proceedings of SPIE the International Society for Optical Engineering, 3896, 163-170.
Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
Dunn GM, Ghin R, Rees GJ, David JPR, Plimmer S & Herbert DC (1999) Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p+in+ diodes. Semiconductor Science and Technology, 14(11), 994-1000.
Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1999) Photoluminescence linewidths of piezoelectric quantum wells. Applied Physics Letters, 75(13), 1929-1931.
Li KF, Plimmer SA, David JPR, Tozer RC, Rees GJ, Robson PN, Button CC & Clark JC (1999) Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication. IEEE PHOTONIC TECH L, 11(3), 364-366.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1999) Piezoelectric InGaAs/AIGaAs laser with intracavity absorber. IEE Proceedings Optoelectronics, 146(1), 62-66.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1999) Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors. IEE P-OPTOELECTRON, 146(1), 21-24.
Khoo EA, Woodhead J, David JPR, Grey R & Rees GJ (1999) Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber. Electronics Letters, 35(2), 150-152.
Roberts JS, David JPR, Smith L & Tihanyi PL (1998) The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers. Journal of Crystal Growth, 195(1-4), 668-675.
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) A monte carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes. IEEE Transactions on Electron Devices, 45(8), 1804-1810.
Ghin R, David JPR, Plimmer SA, Hopkinson M, Rees GJ, Herbert DC & Wight DR (1998) Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
Li KF, Ong DS, David JPR, Rees GJ, Tozer RC, Robson PN & Grey R (1998) Avalanche multiplication noise characteristics in thin GaAs p(+)-i-n(+) diodes. IEEE T ELECTRON DEV, 45(10), 2102-2107.
Flitcroft RM, David JPR, Houston PA & Button CC (1998) Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors. IEEE T ELECTRON DEV, 45(6), 1207-1212.
Chia CK, David JPR, Rees GJ, Plimmer SA, Grey R & Robson PN (1998) Impact ionization in AlxGa1-xAs/GaAs single heterostructures. Journal of Applied Physics, 84(8), 4363-4369.
Ong DS, Li KF, Rees GJ, David JPR & Robson PN (1998) A simple model to determine multiplication and noise in avalanche photodiodes. Journal of Applied Physics, 83(6), 3426-3428.
Lye BC, Houston PA, Button CC & David JPR (1998) Electrical and optical characterisation of heavily doped GaAs : C bases of heterojunction bipolar transistors. SOLID STATE ELECTRON, 42(1), 115-120.
Ong DS, Li KF, Rees GJ, David JPR, Robson PN & Dunn GM (1998) Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes. Applied Physics Letters, 72(2), 232-234.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1998) Low excess noise characteristics in thin avalanche region GaAs diodes. ELECTRON LETT, 34(1), 125-126.
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro Optics Europe Technical Digest, 95.
Yow HK, Houston PA, Button CC, David JPR & Ng CMS (1998) Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors. J ELECTRON MATER, 27(1), 17-23.
Dunn GM, Rees GJ & David JPR (1997) Simulation of impact ionization breakdown in MESFETS using Monte Carlo methods. Semiconductor Science and Technology, 12(9), 1147-1153.
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization in photodetectors. Semiconductor Science and Technology, 12(6), 692-697.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1997) Monte Carlo simulation of impact ionization and current multiplication in short GaAs p+in+ diodes. Semiconductor Science and Technology, 12(1), 111-120.
Chia CK, David JPR, Rees GJ, Robson PN, Plimmer SA & Grey R (1997) Electron multiplication in AlxGa1-xAs/GaAs heterostructures. Applied Physics Letters, 71(26), 3877-3879.
Plimmer SA, David JPR & Dunn GM (1997) Spatial limitations to the application of the lucky-drift theory of impact ionization. IEEE Transactions on Electron Devices, 44(4), 659-663.
Lidzey DG, Bradley DDC, Pate MA, David JPR, Whittaker DM, Fisher TA & Skolnick MS (1997) Mapping the confined optical field in a microcavity via the emission from a conjugated polymer. APPL PHYS LETT, 71(6), 744-746.
Plimmer SA, David JPR, Rees GJ, Grey R, Herbert DC, Wight DR & Higgs AW (1997) Impact ionization in thin AlxGa1-xAs (x = 0.15 and 0.30) p-i-n diodes. Journal of Applied Physics, 82(3), 1231-1235.
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ & Robson PN (1997) Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
Wilson LR, Mowbray DJ, Skolnick MS, Astratov VN, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1997) Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate. Electronics Letters, 33(11), 957-958.
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionisation in MESFETs. Electronics Letters, 33(7), 639-640.
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionisation in photodetectors. Electronics Letters, 33(4), 337-339.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) Influence of ordering on the polarization characteristics of GaInP vertical-cavity surface-emitting lasers. IEEE Photonics Technology Letters, 9(2), 143-145.
Valtueña JF, Izpura I, Sánchez-Rojas JL, Muñoz E, Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1997) Memory effects on piezoelectric InGaAs/GaAs MQW PIN diodes. Microelectronics Journal, 28(8-10), 757-765.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1997) Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers ( VCSELs). Journal of Crystal Growth, 170(1-4), 399-403.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) Polarisation characteristics of visible VCSELs. Journal of Crystal Growth, 170(1-4), 394-398.
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allam J (1997) Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes. IEEE International Conference on Semiconductor Electronics Proceedings ICSE, 256-260.
Roberts JS, David JPR, Chen YH & Sale TE (1997) Optical properties of MOVPE grown AlxGa1-xAs quantum wells. Journal of Crystal Growth, 170(1-4), 621-625.
Martin RW, McGow FJ, Hopkinson M & David JPR (1997) Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
Wilson LR, Mowbray DJ, Skolnick MS, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
Kinder D, Nicholas RJ, Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G (1996) Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
Mazzer M, Grünbaum E, Barnham KWJ, Barnes J, Griffin PR, Holt DB, Hutchison JL, Norman AG, David JPR, Roberts JS & Grey R (1996) Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells. Materials Science and Engineering B, 42(1-3), 43-51.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1996) Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes. IEEE Transactions on Electron Devices, 43(12), 2303-2305.
Griffin PR, Barnes J, Barnham KWJ, Haarpaintner G, Mazzer M, Zanotti-Fregonara C, Grünbaum E, Olson C, Rohr C, David JPR , Roberts JS et al (1996) Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes. Journal of Applied Physics, 80(10), 5815-5820.
Kowalski OP, Wegerer RM, Mowbray DJ, Skolnick MS, Button CC, Roberts JS, Hopkinson M, David JPR & Hill G (1996) Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1996) Room temperature visible (683-713 nm) all-AlGaAs vertical-cavity surface-emitting lasers (VCSEL's). IEEE Photonics Technology Letters, 8(4), 473-475.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1996) Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration. Applied Physics Letters, 68(12), 1595-1597.
Chen YH, Wilkinson CI, Woodhead J, Button CC, David JPR, Pate MA & Robson PN (1996) Polarisation characteristics of InGaAlP/ AlGaAs visible vertical cavity surface emitting lasers. Electronics Letters, 32(6), 559-560.
David JPR, Sale TE, Pabla AS, RodriguezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN, Skolnick MS & Hogg RA (1996) Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures. APPL PHYS LETT, 68(6), 820-822.
Plimmer SA, David JPR, Herbert DC, Lee TW, Rees GJ, Houston PA, Grey R, Robson PN, Higgs AW & Wight DR (1996) Investigation of impact ionization in thin GaAs diodes. IEEE T ELECTRON DEV, 43(7), 1066-1072.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1995) Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration. Applied Physics Letters, 1595.
DAVID JPR, HOPKINSON M, STAVRINOU PN & HAYWOOD SK (1995) GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
David JPR, Chen YH, Grey R, Hill G, Robson PN & Kightley P (1995) Effect of misfit dislocations on leakage currents in strained multiquantum well structures. Applied Physics Letters, 67, 906.
David JPR, Allam J, Adams AR, Roberts JS, Grey R, Rees GJ & Robson PN (1995) Avalanche breakdown in AlxGa1-xAs alloys and Al0.3Ga0.7As/GaAs multilayers. Applied Physics Letters, 2876.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings International Conference on Indium Phosphide and Related Materials, 299-302.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
Grey R, David JPR, Hill G, Pabla AS, Pate MA, Rees GJ, Robson PN, RodriguezGirones PJ, Sale TE, Woodhead J , Fisher TA et al (1995) Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
ROBERTS JS & DAVID JPR (1994) HIGH-PURITY ALGAAS FROM METHYL-BASED PRECURSORS USING IN-SITU GETTERING OF ALKOXIDES. J CRYST GROWTH, 145(1-4), 968-969.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Reddy M, Hill G & Sánchez-Dehesa J (1994) Room- and low-temperature assessment of pseudomorphic AlGaAs/InGaAs/GaAs high-electron-mobility transistor structures by photoluminescence spectroscopy. Journal of Applied Physics, 76(10), 5931-5944.
SALE TE, WOODHEAD J, REES GJ, GREY R, DAVID JPR, PABLA AS, RODRIGUEZGIRONES PJ, ROBSON PN, HOGG RA & SKOLNICK MS (1994) CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS. J APPL PHYS, 76(9), 5447-5452.
Roberts JS, David JPR, Sale TE & Tihanyi PL (1994) High purity AlGaAs from methyl-based precursors using in situ gettering of alkoxides. Journal of Crystal Growth, 143(3-4), 135-140.
PABLA AS, HOPKINSON M, DAVID JPR, KHOO EA & REES GJ (1994) ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
Pabla AS, Woodhead J, Grey R, Rees GJ, David JPR, Pate MA & Robson PN (1994) All-optical bistable switching in a strained piezoelectric self-electro-optic effect device. Electronics Letters, 30(18), 1521-1522.
DAVID JPR, GREY R, REES GJ, PABLA AS, SALE TE, WOODHEAD J, SANCHEZROJAS JL, PATE MA, HILL G, ROBSON PN , HOGG RA et al (1994) GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
Dunstan DJ, Kidd P, Fewster PF, Andrew NL, Grey R, David JPR, González L, González Y, Sacedón A & González-Sanz F (1994) Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures. Applied Physics Letters, 65(7), 839-841.
MOWBRAY DJ, KOWALSKI OP, HOPKINSON M, SKOLNICK MS & DAVID JPR (1994) ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
WOODHEAD J, REDDY M & DAVID JPR (1994) ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS. ELECTRON LETT, 30(14), 1181-1183.
DAVID JPR, HOPKINSON M & PATE MA (1994) AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, DELONG MC, HOPKINSON M, DAVID JPR & CULLIS AG (1994) SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
David JPR, Hopkinson M, Ghin R & Pate MA (1994) Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings International Conference on Indium Phosphide and Related Materials, 403-406.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, HOPKINSON M & DAVID JPR (1994) OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
Hogg RA, Fisher TA, Willcox AR, Whittaker DM, Skolnick MS, Mowbray DJ, David JP, Pabla AS, Rees GJ, Grey R , Woodhead J et al (1993) Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells.. Phys Rev B Condens Matter, 48(11), 8491-8494.
PABLA AS, SANCHEZROJAS JL, WOODHEAD J, GREY R, DAVID JPR, REES GJ, HILL G, PATE MA, ROBSON PN, HOGG RA , FISHER TA et al (1993) TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, HOPKINSON M, DAVID JPR, TAYLOR PC, KURTZ SR & OLSON JM (1993) PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
David JPR, Hopkinson M, Hill G, Stavrinou P & Haywood SK (1993) Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
Roberts JS, Sale TE, Button CC, David JPR & Jennings A (1992) High performance microcavity resonator devices grown by atmospheric pressure MOVPE. Journal of Crystal Growth, 124(1-4), 792-800.
David JPR, Morley MJ, Wolstenholme AR, Grey R, Pate MA, Hill G, Rees GJ & Robson PN (1992) Enhanced breakdown voltages in strained InGaAs/GaAs structures. Applied Physics Letters, 61(17), 2042-2044.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Hill G & Castagné J (1992) Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors. Applied Physics Letters, 61(10), 1225-1227.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) DETERMINATION OF LOW-TEMPERATURE IMPACT IONIZATION COEFFICIENTS IN GAAS BY ELECTROLUMINESCENCE MEASUREMENTS ON SINGLE BARRIER TUNNELING STRUCTURES. APPL PHYS LETT, 61(7), 825-827.
HOPKINSON M, DAVID JPR, CLAXTON PA & KIGHTLEY P (1992) GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) IMPACT IONIZATION AND ELECTROLUMINESCENCE IN SINGLE BARRIER TUNNELING STRUCTURES. SUPERLATTICE MICROST, 12(4), 443-446.
David JPR, Grey R, Pate MA, Claxton PA & Woodhead J (1991) Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes. Journal of Electronic Materials, 20(4), 295-297.
ROBERTS JS, SINGH KC, BUTTON CC, DAVID JPR & WOODHEAD J (1991) ALGAAS/GAAS P-MODFET MATERIALS GROWN USING INTRINSIC CARBON DOPING. JOURNAL OF CRYSTAL GROWTH, 107(1-4), 915-920.
Woodhead J, Claxton PA, Grey R, Sale TE, David JPR, Liu L, Pate MA, Hill G & Robson PN (1990) Low Voltage Strained Layer Asymmetric Fabry-Perot Reflection Modulator. Electronics Letters, 26(25), 2117-2118.
DAVID JPR, WOLSTENHOLME AR, CLAXTON PA, GREY R & WOODHEAD J (1990) LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES. J ELECTRON MATER, 19(7), 56-56.
Pickin W & David JPR (1990) Carrier decay in GaAs quantum wells. Applied Physics Letters, 56(3), 268-270.
Roberts JS, Button CC, David JPR, Jones AC & Rushworth SA (1990) MOVPE growth of AlGaAs using trimethylamine alane. Journal of Crystal Growth, 104(4), 857-860.
Grey R, David JPR, Claxton PA, Gonzalez Sanz F & Woodhead J (1989) Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures. Journal of Applied Physics, 66(2), 975-977.
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. INST PHYS CONF SER(96), 397-400.
David JPR, Marsland JS & Roberts JS (1989) The Electron Impact Ionization Rate and Breakdown Voltage in GaAs/Ga0.7A10.3As MQW Structures. IEEE Electron Device Letters, 10(7), 294-296.
Woodhead J, Gonzalez Sanz F, Claxton PA & David JPR (1988) On the band gap of InGaAs/GaAs strained quantum wells. Semiconductor Science and Technology, 3(6), 601-604.
Pape IJ, Wa PLK, David JPR, Claxton PA & Robson PN (1988) Disordering of ga0.47ln0 53as/lnp multiple quantum well layers by sulphur diffusion. Electronics Letters, 24(19), 1217-1218.
Pape IJ, Li Kam Wa PLK, David JPR, Claxton PA, Robson PN & Sykes D (1988) Diffusion-Induced Disordering of Ga0.47ln0 53As/lnP Multiple Quantum Wells with Zinc. Electronics Letters, 24(15), 910-911.
ROBERTS DA, DAVID JPR, HILL G, HOUSTON PA, PATE MA, ROBERTS JS & ROBSON PN (1988) GAAS/ALGAAS MULTIPLE QUANTUM WELL PIN DIODES GROWN BY SELECTIVE AREA EPITAXY. ELECTRON LETT, 24(14), 896-898.
Li Kam Wa P, Robson PN, Roberts JS, Pate MA & David JPR (1988) All-optical switching between modes of a GaAs/GaAlAs multiple quantum well waveguide. Applied Physics Letters, 52(24), 2013-2014.
ROBERTS JS, PATE MA, MISTRY P, DAVID JPR, FRANKS RB, WHITEHEAD M & PARRY G (1988) MOVPE GROWN MQW PIN DIODES FOR ELECTRO-OPTIC MODULATORS AND PHOTODIODES WITH ENHANCED ELECTRON IONIZATION COEFFICIENT. J CRYST GROWTH, 93(1-4), 877-884.
WHITEHEAD M, PARRY G, ROBERTS JS, MISTRY P, WA PLKM & DAVID JPR (1987) QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS. ELECTRON LETT, 23(20), 1048-1050.
CLAXTON PA, ROBERTS JS, DAVID JPR, SOTOMAYORTORRES CM, SKOLNICK MS, TAPSTER PR & NASH KJ (1987) GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE. J CRYST GROWTH, 81(1-4), 288-295.
Wa PLK, Robson PN, David JPR, Hill G, Mistry P, Pate MA & Roberts JS (1986) NONLINEAR PROPERTIES OF GaAs/GaAlAs MULTI-QUANTUM-WELL OPTICAL WAVEGUIDES.. IEE Colloquium Digest(1986 /128), 4-8.
WA PLK, ROBSON PN, DAVID JPR, HILL G, MISTRY P, PATE MA & ROBERTS JS (1986) ALL-OPTICAL SWITCHING EFFECTS IN A PASSIVE GAAS/GAALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE RESONATOR. ELECTRON LETT, 22(21), 1129-1130.
Roberts JS, Claxton PA, David JPR & Marsh JH (1986) Improved Molecular Beam Epitaxial Growth Of Inp Using Solid Sources. Electronics Letters, 22(10), 506-507.
David JPR, Marsland JS, Hall HY, Hill G, Mason NJ, Pate MA, Roberts JS, Robson PN, Sitch JE & Woods RC (1985) MEASURED IONIZATION COEFFICIENTS IN Ga//1// minus //xAl//xAs.. Institute of Physics Conference Series(74), 247-252.
DAVID JPR (1985) IONIZATION COEFFICIENT IN GAAS, DOPING DEPENDENCE. IEE PROC-I, 132(1), 47-47.
DAVID JPR, SITCH JE & STERN MS (1982) GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS. IEEE T ELECTRON DEV, 29(10), 1548-1552.
Harun F, Rusli JR, Richards RD, Abdul Rahman MG & David JPR () Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications. Solid State Phenomena, 343, 99-104.

Book chapters

Gu Y, Richards RD, David JPR & Zhang Y (2019) Dilute Bismide Photodetectors, Springer Series in Materials Science (pp. 299-318). Springer Singapore
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2018) Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8×3" multiwafer reactor for optoelectronic applications, Microscopy of Semiconducting Materials 2003 (pp. 107-110).
Finley JJ & David JPR (2005) SEMICONDUCTOR MATERIALS | GaAs Based Compounds, Encyclopedia of Modern Optics (pp. 358-363). Elsevier
Allam J & David JPR (1996) Universal Relation Between Avalanche Breakdown Voltage and Bandstructure in Wide-Gap Semiconductors, Hot Carriers in Semiconductors (pp. 343-346). Springer US
Cullis AG & Midgley PA () Microscopy of Semiconducting Materials 2003 CRC Press

Conference proceedings

Yi X, Jin X, Liang BL, Lewis H, Tian Q, Tan CH, Xie S, Li Q, Yan Z, Buller G & David JPR (2025) Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Optical Components and Materials XXII (pp 34-34), 25 January 2025 - 31 January 2025.
Millar RW, Mirza M, Smith CK, Kirdoda J, Dumas DCS, McCarthy C, Fleming F, Yi X, Modak M, Saalbach L , Muir D et al (2025) Pseudo-planar Ge-on-Si avalanche photodiode with >100 gain and low excess noise. Optical Components and Materials XXII (pp 19-19), 25 January 2025 - 31 January 2025.
Modak M, Yi X, Saalbach L, Mirza MMA, Jin X, Fleming F, Kirdoda J, Dumas DCS, Tian Q, Muir DAS , Smith CK et al (2025) Development of high-performance short-wave infrared Ge-on-Si linear mode avalanche photodiodes. Silicon Photonics XX (pp 24-24), 25 January 2025 - 31 January 2025.
Modak M, Yi X, Saalbach L, Fleming F, Muir DAS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C, McCarthy C , Mowbray H et al (2024) Ge-on-Si avalanche photodiodes and single-photon avalanche diode detectors for low-level light detection in the short-wave infrared wavelength region. Emerging Imaging and Sensing Technologies for Security and Defence IX (pp 17-17), 16 September 2024 - 20 September 2024.
Yi X, Saalbach L, Fleming F, Modak M, Muir D, Buller GS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C , Coughlan C et al (2024) Linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes in the SWIR (Conference Presentation). Infrared Sensors, Devices, and Applications XIV (pp 12-12), 18 August 2024 - 23 August 2024.
Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
Liu Y, Jin X, Lee S, Jung H, Lewis H, Guo B, Kodati S, Schawrtz M, Gerin C, Ronningen TJ , Campbell J et al (2024) Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature. Optical Components and Materials XXI, Vol. 12882. San Francisco, California, United States, 27 January 2024 - 27 January 2024. View this article in WRRO
Harun F, Richards RD & David JPR (2023) Effect of biasing under illumination on GaAsBi/GaAs multiple quantum wells for solar cell performance. 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (pp 40-43), 28 August 2023 - 30 August 2023.
David JPR, Jin X, Lewis HIJ, Guo B, Lee S, Jung H, Kodati SH, Liang BL, Krishna S & Campbell JC (2022) Avalanche multiplication and excess noise characteristics in antimony-based avalanche photodiodes. Emerging Imaging and Sensing Technologies for Security and Defence VII (pp 10-10), 5 September 2022 - 8 September 2022.
Harun F, Richards RD & David JP (2022) Effect of bismuth flux on the optical and morphological properties of GaAsBi grown by Molecular Beam Epitaxy. 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA) (pp 127-131), 26 September 2022 - 28 September 2022.
Rockett TB, Adham NA, Carr M, David JPR & Richards RD (2022) GaAsBi light emitting diodes for 1050nm broadband light sources. Biomedical Spectroscopy, Microscopy, and Imaging II (pp 42-42), 3 April 2022 - 23 May 2022.
Jin X, Guo B, Lewis H, Lee S, Liang B, Krishna S, Campbell J & David J (2022) Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optical Sensing and Detection VII (pp 7-7), 3 April 2022 - 16 May 2022.
Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. Optical Components and Materials XIX (pp 19-19), 22 January 2022 - 28 February 2022.
Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III (pp 18-18), 21 September 2020 - 25 September 2020.
Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) Photoluminescence and Raman Studies on $mathrm{GaAs}_{1-mathrm{x}}mathrm{Bi}_{mathrm{X}}$ Grown on GaAs. 2020 IEEE 8th International Conference on Photonics (ICP) (pp 1-2), 12 May 2020 - 30 June 2020.
Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation). Optical Components and Materials XVII (pp 13-13), 1 February 2020 - 6 February 2020.
Mohmad AR & David JPK (2018) Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 µm. 2018 IEEE International Conference on Semiconductor Electronics (ICSE) (pp 177-179), 15 August 2018 - 17 August 2018.
Singh R, Pergoloni S, O'Farrell T, Scarano G, David J & Biagi M (2018) White Light Constrained Multi-Primary Modulation for Visible Light Communication. 2017 IEEE Globecom Workshops (GC Wkshps). Marina Bay Sands Expo and Convention Centre, Singapore, 4 December 2017 - 4 December 2017. View this article in WRRO
Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Proceedings, Advanced Photon Counting Techniques XI, Vol. 10212. California, United States, 9 April 2017 - 9 April 2017. View this article in WRRO
Becker JJ, Xu X, Woods-Robinson R, Campbell CM, Lassise M, Ager J & Zhang Y-H (2017) CuZnS hole contacts on monocrystalline CdTe solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) (pp 3410-3412), 25 June 2017 - 30 June 2017.
Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988. Edinburgh View this article in WRRO
Richards RD, Harun F, Cheong JS, Mellor A, Hylton NP, Wilson T, Thomas T, Ekins-Daukes NJ & David JPR (2016) GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics. Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016 (pp 1135-1137). Portland, OR, USA, 5 June 2016 - 5 June 2016. View this article in WRRO
Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. Photonics (ICP), 2016 IEEE 6th International Conference on. Sarawak, Malaysia, 14 March 2016 - 14 March 2016. View this article in WRRO
Richards RD, Hunter CJ, Bastiman F, Mohmad AR & David JPR (2016) Telecommunication wavelength GaAsBi light emitting diodes. IET Optoelectronics, Vol. 10(2) (pp 34-38) View this article in WRRO
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Mohmad AR, Majlis BY, Bastiman F, Richards RD & David JPR (2015) The effect of growth conditions to the optical quality of GaAsBi alloy. 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (pp 1-3), 19 August 2015 - 21 August 2015.
Singh R, O'Farrell T & David JPR (2015) Analysis of forward error correction schemes for colour shift keying modulation. 2015 IEEE 26th Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC) (pp 575-579), 30 August 2015 - 2 September 2015.
Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) A high sensitivity detector for underwater communication systems. SPIE Proceedings, Vol. 9647 (pp 96470O-96470O)
Singh R, O'Farrell T & David JPR (2015) Higher Order Colour Shift Keying Modulation Formats for Visible Light Communications. 2015 IEEE 81st Vehicular Technology Conference (VTC Spring) (pp 1-5), 11 May 2015 - 14 May 2015.
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference 2015 (pp ASu5A.3-ASu5A.3), 2015.
Hossain MM, Zarkesh-Ha P, David JPR & Hayat MM (2014) Low breakdown voltage CMOS compatible p-n junction avalanche photodiode. 2014 IEEE Photonics Conference (pp 170-171), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference (pp 356-357), 12 October 2014 - 16 October 2014.
Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) Narrow-band detector for underwater communication system. 2014 IEEE Photonics Conference (pp 346-347), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) Demonstration of an InAsBi photodiode operating in the MWIR. SPIE Proceedings
Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) Photoluminescence from localized states in GaAsBi epilayers. 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) (pp 354-357), 27 August 2014 - 29 August 2014.
Auckloo A, Tozer R, David J & Tan CH (2014) A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) (pp 590-593), 7 December 2014 - 10 December 2014.
Ker PJ, Tan CH & David JPR (2013) High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics Icp 2013 Conference Proceeding (pp 78-80)
Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) Design of High Sensitivity Detector for Underwater Communication System. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Singh R, O'Farrell T & David J (2013) Performance evaluation of IEEE 802.15.7 CSK physical layer. Globecom Workshops (GC Wkshps), 2013 IEEE
Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 µm grown on Silicon. IEEE Photonics Conference 2012 (pp 167-168), 23 September 2012 - 27 September 2012.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest 2012 17th Opto Electronics and Communications Conference Oecc 2012 (pp 220-221)
Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) Dilute nitride GaInNAs and GaInNAsSb for solar cell applications. Proceedings of SPIE the International Society for Optical Engineering, Vol. 8256
Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 31-32)
Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting (pp 276-277), 9 October 2011 - 13 October 2011.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) InGaAsN absorber for telecommunication wavelength APDs. 2010 Photonics Global Conference Pgc 2010
Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 706-707)
Hayat MM, Ong DSG, David JPR & Ng JS (2010) Sensitivity of high-speed receivers using InAlAs avalanche photodiodes. 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 126-127)
Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7838
Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 187-190)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 421-424)
Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 409-412)
Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7726
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7681
Green JE, Loh WS, David JPR, Tozer RC, Soloviev SI & Sandvik PM (2010) Characterisation of Low Noise 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol. 645-648 (pp 1081-1084)
Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
Chee HT, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7355
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Marshall ARJ, Tan CH & David JPR (2009) The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7320
Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS (pp 296-297)
Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
David JPR (2008) Low noise avalanche photodiodes. 2008 IEEE International Conference on Semiconductor Electronics (pp A12-A12), 25 November 2008 - 27 November 2008.
Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
Aivaliotis P, Zibik E, Wilson LR, David JPR, Hopkinson M & Groves C (2006) Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications. Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics Infobase Conference Papers
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
David JPR (2005) Low noise avalanche photodiodes. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 368-369)
Liu HY, Sellers IR, Gutierrez M, Groom KM, Beanland R, Soong WM, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ & Skolnick MS (2005) Optimizing the growth of 1.3-mu m InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference Conference Digest Drc (pp 79-80)
Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2004) Avalanche multiplication and breakdown in 4H-SiC diodes. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, Vol. 457-460 (pp 1069-1072)
Rees G & David J (2003) Lonisation dead space and the super-APD. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 995-996)
Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) High gain, low noise 4H-SiC UV avalanche photodiodes. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 355-358)
Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
David JPR (2003) Physics & design of low noise avalanche photodiodes. CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 (pp 99-99)
David JPR (2003) Physics and design of low noise avalanche photodiodes - LEOS distinguished lecture 2003-2004. ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS (pp 170-170)
David J (2003) Low Noise Avalanche Photodiodes. Optics Infobase Conference Papers (pp 19-20)
Groves C, Ghin R, Harrison CN, David JPR & Rees GJ (2002) Temperature dependence of avalanche multiplication in GaAs. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 226-230)
Yee M, Ng WK, David JPR & Houston PA (2002) Temperature dependence of In0.53Ga0.47As ionisation coefficients. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 316-320)
Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) Impact ionisation coefficients of In0.53Ga0.47As. IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 131-136)
Fry PW, Itskevich IE, Mowbray DJ, Sholnick MS, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M , Al-Khafaji M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3953 (pp 95-102)
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO (pp 230-235)
Chia CK, David JPR, Rees GJ, Plimmer SA & Grey R (1999) Avalanche multiplication in Al x Ga 1-x As/GaAs multilayer structures. SPIE Proceedings, Vol. 3896 (pp 385-385)
Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 295-298)
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low noise avalanche photodetectors. Conference on Lasers and Electro Optics Europe Technical Digest (pp 383)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 435-438)
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro-Optics-Europe (pp CTuI50-CTuI50), 1998.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low Noise Avalanche Photodetectors. Conference on Lasers and Electro-Optics-Europe (pp CFG9-CFG9), 1998.
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) Monte Carlo estimation of excess noise factor in thin p(+)-i-n(+) avalanche photodiodes. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 631-634)
Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 435-438)
Flitcroft RM, Houston PA, Lye BC, Button CC & David JPR (1997) Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors. EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 273-278)
Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
Sale TE, Roberts JS, David JPR, Grey R & Robson PN (1997) <title>VCSELs for 640- to 1100-nm emission</title>. SPIE Proceedings, Vol. 3004 (pp 10-21)
Sale TE, Roberts JS, David JPR, Grey R, Woodhead J & Robson PN (1997) <title>Temperature effects in VCSELs</title>. SPIE Proceedings, Vol. 3003 (pp 100-110)
Ghin R, Dunn GM, Plimmer SA, David JPR, Rees GJ & Herbert DC (1997) Monte Carlo modelling of impact ionisation in GaAs. COMPOUND SEMICONDUCTORS 1996(155) (pp 629-632)
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization effects in MSM photodetectors and MESFET's.. COMPOUND SEMICONDUCTORS 1996(155) (pp 659-662)
Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
Li KF, Ong DS, David JPR, Robson PN, Tozer RC, Rees GJ & Grey R (1997) Avalanche photodiode (APD) noise dependence on avalanche region width. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 (pp 170-171)
David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1996) Electron and hole multiplication characteristics in short GaAs PINs. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 563-568)
Plimmer SA, David JPR, Herbert DC, Rees GJ, Houston PA, Robson PN, Grey R, Pate MA, Higgs AW & Wight DR (1996) Multiplication characteristics of thin AlxGa1-xAs (x=0 to 0.3) diodes. 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST (pp 44-45)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1995) Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes. 1995 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (EDMO) (pp 64-69)
Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
David JPR, Sale TE, Pabla AS, RodriquezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN & Skolnick MS (1995) Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 42-46)
Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Integrated Photonics Research (pp FF5-FF5), 1994.
DAVID JPR, KIGHTLEY P, CHEN YH, GOH TS, GREY R, HILL G & ROBSON PN (1994) LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 373-378)
DAVID JPR, ALLAM J, ROBERTS JS, GREY R, REES G & ROBSON PN (1994) AVALANCHE BREAKDOWN IN GAAS/ALXGA1-XAS MULTILAYERS AND ALLOYS. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 721-726)
SANCHEZROJAS JL, MUNOZ E, PABLA AS, DAVID JPR, REES GJ, WOODHEAD J & ROBSON PN (1994) OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 331-336)
DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
FISHER TA, HOGG RA, WILLCOX ARK, WHITTAKER DM, SKOLNICK MS, MOWBRAY DJ, DAVID JPR, PABLA AS, REES GJ, GREY R , SANCHEZROJAS JL et al (1994) SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Optics Infobase Conference Papers (pp 260-262)
AARDVARK A, ALLOGHO GG, BOUGNOT G, DAVID JPR, GIANI A, HAYWOOD SK, HILL G, KLIPSTEIN PC, MANSOOR F, MASON NJ , NICHOLAS RJ et al (1993) DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 8(1) (pp S380-S385)
CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 (pp 397-400)
Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z & David JPR () Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. Journal of Crystal Growth. Montpellier, France View this article in WRRO
Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes (pp 339-342)
David JPR () Physics and design of low noise avalanche photodiodes. Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715), Vol. 1 (pp 99-99)
David JPR, Ghin R, Plimmer SA, Rees GJ & Grey R () Temperature dependence of avalanche breakdown in GaAs p-i-n diodes. HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) (pp 187-190)
Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 μm modulation grown by solid source MBE. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) (pp 564-567)
Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (pp 440-443)
Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () Strain effects in InAsP/InP MQW modulators for 1.06 μm operation. Seventh International Conference on Indium Phosphide and Related Materials (pp 536-539)
Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () Varying strains in InAs/sub 1-x/P/sub x//InP multiple quantum well device structures. 1993 (5th) International Conference on Indium Phosphide and Related Materials (pp 652-655)
Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () Photoconductivity of a strained InAs/InP superlattice in the 1.0-1.5 mu m region. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels (pp 569-572)
Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy. [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials (pp 492-495)

Preprints

Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 {mu}m Wavelength Detection, arXiv.
Gamel M, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David J & Jamaludin MZ (2020) Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm, Research Square Platform LLC.
Singh R, O'Farrell T, Bui TC, Biagi M & David JPR (2019) Performance Evaluation of Frequency Domain Equalisation Based Colour Shift Keying Modulation Schemes Over Diffuse Optical Wireless Channels, arXiv.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors, arXiv.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector, arXiv.

Research group: Materials and Devices

Teaching interests

EEE124 -Introduction to Energy
EEE225 - Analogue and Digital Electronics
EEE6216 -Energy Efficient Semiconductor Devices
MEC316 - Renewable Energy

Professional activities and memberships

Fellow of the IEEE
Fellow of the IET

School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor John David

Journal articles

Book chapters

Conference proceedings

Preprints

Links