Professor John David

PhD, BEng

Department of Electronic and Electrical Engineering

Personal Chair

Departmental Director of Admissions

Semiconductor Materials and Devices Research Group

Headshot of John David
Profile picture of Headshot of John David
j.p.david@sheffield.ac.uk
+44 114 222 5185

Full contact details

Professor John David
Department of Electronic and Electrical Engineering
Profile

I obtained my BEng and PhD degrees in Electronic Engineering from the University of Sheffield in 1979 and 1983, respectively.

After that, I undertook a number of postdoctoral positions within the Department of Electronic & Electrical Engineering at Sheffield eventually managing the characterisation activities of the SERC Centre for III–V Semiconductors.

In 2001 I left to join Marconi Optical Components, Caswell before returning the following year as a Senior Lecturer.

In 2004 I became Professor of Semiconductor Materials and Devices, and between 2009 to 2013 served as Head of Department. Between 2002 -2004 I was a IEEE LEOS Distinguished Lecturer and I am currently a Fellow of the IEEE and IET.

My research is focussed in two areas;

  1. on the characterisation of III-V semiconductor materials and devices, especially that containing Bismuth and
  2. on the understanding and development of avalanche photodiodes. The addition to Bismuth offers a possible route to extend the wavelength of many optical structures such as photodiodes and solar cells.

I use characterisation techniques such as X-ray double crystal diffraction and photoluminescence to study semiconductor structures containing bulk and quantum wells of GaAsBi and , and then correlate this to current-voltage, capacitance-voltage and photocurrent spectra of fabricated devices.

I also study how under very high electric-fields, electrons and holes in a semiconductor gain energy and create further carriers through a process of impact ionisation. This process can lead to destructive breakdown in power electronic devices but can also be utilised to amplify weak optical signals, giving rise to avalanche photodiodes (APDs).

I study the theory behind the ionisation process via different modelling techniques and also look experimentally at the ionisation coefficients in different semiconductor materials and device structures.

The aim of my research is to develop APDs capable of operating at very high speeds for next generation telecommunication networks and also APDs that are very sensitive.

Qualifications
  • PhD (Semiconductors), University of Sheffield 1983
  • BEng (Electronics), University of Sheffield 1976
Research interests
  • Impact Ionisation and breakdown in semiconductors
  • Photodiode and avalanche photodiodes
  • Bismuth containing alloys
Publications

Journal articles

Chapters

Conference proceedings papers

  • Harun F, Richards RD & David JPR (2023) Effect of biasing under illumination on GaAsBi/GaAs multiple quantum wells for solar cell performance. 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 28 August 2023 - 30 August 2023. RIS download Bibtex download
  • David JPR, Jin X, Lewis HIJ, Guo B, Lee S, Jung H, Kodati SH, Liang BL, Krishna S & Campbell JC (2022) Avalanche multiplication and excess noise characteristics in antimony-based avalanche photodiodes. Emerging Imaging and Sensing Technologies for Security and Defence VII, 5 September 2022 - 8 September 2022. RIS download Bibtex download
  • Harun F, Richards RD & David JP (2022) Effect of bismuth flux on the optical and morphological properties of GaAsBi grown by Molecular Beam Epitaxy. 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA), 26 September 2022 - 28 September 2022. RIS download Bibtex download
  • Rockett TB, Adham NA, Carr M, David JPR & Richards RD (2022) GaAsBi light emitting diodes for 1050nm broadband light sources. Biomedical Spectroscopy, Microscopy, and Imaging II, 3 April 2022 - 23 May 2022. RIS download Bibtex download
  • Jin X, Guo B, Lewis H, Lee S, Liang B, Krishna S, Campbell J & David J (2022) Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optical Sensing and Detection VII, 3 April 2022 - 16 May 2022. RIS download Bibtex download
  • Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. Optical Components and Materials XIX (pp 19) RIS download Bibtex download
  • Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020. RIS download Bibtex download
  • Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) Photoluminescence and Raman Studies on $mathrm{GaAs}_{1-mathrm{x}}mathrm{Bi}_{mathrm{X}}$ Grown on GaAs. 2020 IEEE 8th International Conference on Photonics (ICP), 12 May 2020 - 30 June 2020. RIS download Bibtex download
  • Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation). Optical Components and Materials XVII, 1 February 2020 - 6 February 2020. RIS download Bibtex download
  • Mohmad AR & David JPK (2018) Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 µm. 2018 IEEE International Conference on Semiconductor Electronics (ICSE), 15 August 2018 - 17 August 2018. RIS download Bibtex download
  • Singh R, Pergoloni S, O'Farrell T, Scarano G, David J, Biagi M & IEEE (2018) White Light Constrained Multi-Primary Modulation for Visible Light Communication. 2017 IEEE GLOBECOM WORKSHOPS (GC WKSHPS) View this article in WRRO RIS download Bibtex download
  • Becker JJ, Xu X, Woods-Robinson R, Campbell CM, Lassise M, Ager J & Zhang Y-H (2017) CuZnS hole contacts on monocrystalline CdTe solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25 June 2017 - 30 June 2017. RIS download Bibtex download
  • Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z & David J (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. Journal of Crystal Growth, Vol. 477(Proceeding of the 19th International Conference on Molecular Beam Epitaxy) (pp 139-143). Le Corum - Montepllier, France, 4 September 2016 - 9 September 2016. View this article in WRRO RIS download Bibtex download
  • Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Advanced Photon Counting Techniques XI View this article in WRRO RIS download Bibtex download
  • Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO RIS download Bibtex download
  • Richards RD, Harun F, Cheong JS, Mellor A, Hylton NP, Wilson T, Thomas T, Ekins-Daukes NJ & David JPR (2016) GaAsBi: An alternative to InGaAs based multiple quantum well photovoltaics. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5 June 2016 - 10 June 2016. View this article in WRRO RIS download Bibtex download
  • Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016. View this article in WRRO RIS download Bibtex download
  • Richards RD, Hunter CJ, Bastiman F, Mohmad AR & David JPR (2016) Telecommunication wavelength GaAsBi light emitting diodes. IET Optoelectronics, Vol. 10(2) (pp 34-38) View this article in WRRO RIS download Bibtex download
  • Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015 RIS download Bibtex download
  • Mohmad AR, Majlis BY, Bastiman F, Richards RD & David JPR (2015) The effect of growth conditions to the optical quality of GaAsBi alloy. 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 19 August 2015 - 21 August 2015. RIS download Bibtex download
  • Singh R, O'Farrell T & David JPR (2015) Analysis of forward error correction schemes for colour shift keying modulation. 2015 IEEE 26th Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC), 30 August 2015 - 2 September 2015. RIS download Bibtex download
  • Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference 2015, 2015. RIS download Bibtex download
  • Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) A high sensitivity detector for underwater communication systems. Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications RIS download Bibtex download
  • Singh R, O'Farrell T & David JPR (2015) Higher Order Colour Shift Keying Modulation Formats for Visible Light Communications. 2015 IEEE 81st Vehicular Technology Conference (VTC Spring), 11 May 2015 - 14 May 2015. RIS download Bibtex download
  • Auckloo A, Tozer R, David J & Tan CH (2014) A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014. RIS download Bibtex download
  • Hossain MM, Zarkesh-Ha P, David JPR & Hayat MM (2014) Low breakdown voltage CMOS compatible p-n junction avalanche photodiode. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014. RIS download Bibtex download
  • Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014. RIS download Bibtex download
  • Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) Narrow-band detector for underwater communication system. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014. RIS download Bibtex download
  • Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) Photoluminescence from localized states in GaAsBi epilayers. 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014. RIS download Bibtex download
  • Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) Demonstration of an InAsBi photodiode operating in the MWIR. Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III RIS download Bibtex download
  • Singh R, O'Farrell T & David J (2013) Performance evaluation of IEEE 802.15.7 CSK physical layer. Globecom Workshops (GC Wkshps), 2013 IEEE RIS download Bibtex download
  • Ker PJ, Tan CH & David JPR (2013) High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80) RIS download Bibtex download
  • Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) Design of High Sensitivity Detector for Underwater Communication System. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899 RIS download Bibtex download
  • Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899 RIS download Bibtex download
  • Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 µm grown on Silicon. IEEE Photonics Conference 2012, 23 September 2012 - 27 September 2012. RIS download Bibtex download
  • Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221) RIS download Bibtex download
  • Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) Dilute nitride GaInNAs and GaInNAsSb for solar cell applications. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256 RIS download Bibtex download
  • Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241) RIS download Bibtex download
  • Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073) RIS download Bibtex download
  • Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811) RIS download Bibtex download
  • Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531) RIS download Bibtex download
  • Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32) RIS download Bibtex download
  • Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, 9 October 2011 - 13 October 2011. RIS download Bibtex download
  • Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32) RIS download Bibtex download
  • Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) InGaAsN absorber for telecommunication wavelength APDs. 2010 Photonics Global Conference, PGC 2010 RIS download Bibtex download
  • Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707) RIS download Bibtex download
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660 RIS download Bibtex download
  • Hayat MM, Ong DSG, David JPR & Ng JS (2010) Sensitivity of high-speed receivers using InAlAs avalanche photodiodes. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127) RIS download Bibtex download
  • Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838 RIS download Bibtex download
  • Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681 RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424) RIS download Bibtex download
  • Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412) RIS download Bibtex download
  • Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726 RIS download Bibtex download
  • Green JE, Loh WS, David JPR, Tozer RC, Soloviev SI & Sandvik PM (2010) Characterisation of Low Noise 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol. 645-648 (pp 1081-1084) RIS download Bibtex download
  • Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355 RIS download Bibtex download
  • David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457) RIS download Bibtex download
  • Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447) RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298 RIS download Bibtex download
  • Chee HT, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7355 RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320 RIS download Bibtex download
  • Marshall ARJ, Tan CH & David JPR (2009) The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298 RIS download Bibtex download
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167) RIS download Bibtex download
  • Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234) RIS download Bibtex download
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294) RIS download Bibtex download
  • Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314) RIS download Bibtex download
  • Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210) RIS download Bibtex download
  • David JPR (2008) Low noise avalanche photodiodes. 2008 IEEE International Conference on Semiconductor Electronics, 25 November 2008 - 27 November 2008. RIS download Bibtex download
  • Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297) RIS download Bibtex download
  • Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113 RIS download Bibtex download
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113 RIS download Bibtex download
  • Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113 RIS download Bibtex download
  • Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322) RIS download Bibtex download
  • Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333) RIS download Bibtex download
  • Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348) RIS download Bibtex download
  • Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000) RIS download Bibtex download
  • Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400) RIS download Bibtex download
  • Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400) RIS download Bibtex download
  • Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516) RIS download Bibtex download
  • Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514) RIS download Bibtex download
  • Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342) RIS download Bibtex download
  • Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83) RIS download Bibtex download
  • Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298) RIS download Bibtex download
  • Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295) RIS download Bibtex download
  • Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194) RIS download Bibtex download
  • Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers RIS download Bibtex download
  • Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788) RIS download Bibtex download
  • Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790) RIS download Bibtex download
  • Aivaliotis P, Zibik E, Wilson LR, David JPR, Hopkinson M & Groves C (2006) Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications. Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110) RIS download Bibtex download
  • Liu HY, Sellers IR, Gutierrez M, Groom KM, Beanland R, Soong WM, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ & Skolnick MS (2005) Optimizing the growth of 1.3-mu m InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783) RIS download Bibtex download
  • David JPR (2005) Low noise avalanche photodiodes. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 368-369) RIS download Bibtex download
  • Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431) RIS download Bibtex download
  • Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304) RIS download Bibtex download
  • Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334) RIS download Bibtex download
  • Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321) RIS download Bibtex download
  • Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80) RIS download Bibtex download
  • Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2004) Avalanche multiplication and breakdown in 4H-SiC diodes. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, Vol. 457-460 (pp 1069-1072) RIS download Bibtex download
  • David JPR (2003) Physics & design of low noise avalanche photodiodes. CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 (pp 99-99) RIS download Bibtex download
  • David JPR (2003) Physics and design of low noise avalanche photodiodes - LEOS distinguished lecture 2003-2004. ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS (pp 170-170) RIS download Bibtex download
  • Rees G & David J (2003) Lonisation dead space and the super-APD. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 995-996) RIS download Bibtex download
  • Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266) RIS download Bibtex download
  • Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) High gain, low noise 4H-SiC UV avalanche photodiodes. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 355-358) RIS download Bibtex download
  • Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270) RIS download Bibtex download
  • Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774) RIS download Bibtex download
  • David J (2003) Low Noise Avalanche Photodiodes. Optics InfoBase Conference Papers (pp 19-20) RIS download Bibtex download
  • Groves C, Ghin R, Harrison CN, David JPR & Rees GJ (2002) Temperature dependence of avalanche multiplication in GaAs. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 226-230) RIS download Bibtex download
  • Yee M, Ng WK, David JPR & Houston PA (2002) Temperature dependence of In0.53Ga0.47As ionisation coefficients. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 316-320) RIS download Bibtex download
  • Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) Impact ionisation coefficients of In0.53Ga0.47As. IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228) RIS download Bibtex download
  • Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502) RIS download Bibtex download
  • Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 131-136) RIS download Bibtex download
  • Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9) RIS download Bibtex download
  • Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46) RIS download Bibtex download
  • Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518) RIS download Bibtex download
  • Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412) RIS download Bibtex download
  • Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3953 (pp 95-102) RIS download Bibtex download
  • Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38) RIS download Bibtex download
  • Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523) RIS download Bibtex download
  • Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102) RIS download Bibtex download
  • David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38) RIS download Bibtex download
  • Fry PW, Itskevich IE, Mowbray DJ, Sholnick MS, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M , Al-Khafaji M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152) RIS download Bibtex download
  • Chia CK, David JPR, Rees GJ, Plimmer SA & Grey R (1999) Avalanche multiplication in Al x Ga 1-x As/GaAs multilayer structures. Design, Fabrication, and Characterization of Photonic Devices RIS download Bibtex download
  • Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235) RIS download Bibtex download
  • Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298) RIS download Bibtex download
  • Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) Monte Carlo estimation of excess noise factor in thin p(+)-i-n(+) avalanche photodiodes. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 631-634) RIS download Bibtex download
  • Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low noise avalanche photodetectors. Conference on Lasers and Electro-Optics Europe - Technical Digest (pp 383) RIS download Bibtex download
  • Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394) RIS download Bibtex download
  • Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 435-438) RIS download Bibtex download
  • Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 435-438) RIS download Bibtex download
  • Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro-Optics-Europe, 1998. RIS download Bibtex download
  • Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low Noise Avalanche Photodetectors. Conference on Lasers and Electro-Optics-Europe, 1998. RIS download Bibtex download
  • Sale TE, Roberts JS, David JPR, Grey R & Robson PN (1997) VCSELs for 640- to 1100-nm emission. Fabrication, Testing, and Reliability of Semiconductor Lasers II RIS download Bibtex download
  • Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038) RIS download Bibtex download
  • Ghin R, Dunn GM, Plimmer SA, David JPR, Rees GJ & Herbert DC (1997) Monte Carlo modelling of impact ionisation in GaAs. COMPOUND SEMICONDUCTORS 1996(155) (pp 629-632) RIS download Bibtex download
  • Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization effects in MSM photodetectors and MESFET's.. COMPOUND SEMICONDUCTORS 1996(155) (pp 659-662) RIS download Bibtex download
  • Sale TE, Roberts JS, David JPR, Grey R, Woodhead J & Robson PN (1997) Temperature effects in VCSELs. Vertical-Cavity Surface-Emitting Lasers RIS download Bibtex download
  • Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542) RIS download Bibtex download
  • Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588) RIS download Bibtex download
  • Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146) RIS download Bibtex download
  • Li KF, Ong DS, David JPR, Robson PN, Tozer RC, Rees GJ & Grey R (1997) Avalanche photodiode (APD) noise dependence on avalanche region width. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 (pp 170-171) RIS download Bibtex download
  • Flitcroft RM, Houston PA, Lye BC, Button CC & David JPR (1997) Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors. EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 273-278) RIS download Bibtex download
  • David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574) RIS download Bibtex download
  • David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260) RIS download Bibtex download
  • Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1996) Electron and hole multiplication characteristics in short GaAs PINs. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 563-568) RIS download Bibtex download
  • Plimmer SA, David JPR, Herbert DC, Rees GJ, Houston PA, Robson PN, Grey R, Pate MA, Higgs AW & Wight DR (1996) Multiplication characteristics of thin AlxGa1-xAs (x=0 to 0.3) diodes. 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST (pp 44-45) RIS download Bibtex download
  • David JPR, Sale TE, Pabla AS, RodriquezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN & Skolnick MS (1995) Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 42-46) RIS download Bibtex download
  • Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16) RIS download Bibtex download
  • Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612) RIS download Bibtex download
  • HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302) RIS download Bibtex download
  • Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1995) Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes. 1995 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (EDMO) (pp 64-69) RIS download Bibtex download
  • FISHER TA, HOGG RA, WILLCOX ARK, WHITTAKER DM, SKOLNICK MS, MOWBRAY DJ, DAVID JPR, PABLA AS, REES GJ, GREY R , SANCHEZROJAS JL et al (1994) SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648) RIS download Bibtex download
  • Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Integrated Photonics Research, 1994. RIS download Bibtex download
  • DAVID JPR, KIGHTLEY P, CHEN YH, GOH TS, GREY R, HILL G & ROBSON PN (1994) LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 373-378) RIS download Bibtex download
  • DAVID JPR, ALLAM J, ROBERTS JS, GREY R, REES G & ROBSON PN (1994) AVALANCHE BREAKDOWN IN GAAS/ALXGA1-XAS MULTILAYERS AND ALLOYS. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 721-726) RIS download Bibtex download
  • SANCHEZROJAS JL, MUNOZ E, PABLA AS, DAVID JPR, REES GJ, WOODHEAD J & ROBSON PN (1994) OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 331-336) RIS download Bibtex download
  • DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406) RIS download Bibtex download
  • HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554) RIS download Bibtex download
  • Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Optics InfoBase Conference Papers (pp 260-262) RIS download Bibtex download
  • AARDVARK A, ALLOGHO GG, BOUGNOT G, DAVID JPR, GIANI A, HAYWOOD SK, HILL G, KLIPSTEIN PC, MANSOOR F, MASON NJ , NICHOLAS RJ et al (1993) DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 8(1) (pp S380-S385) RIS download Bibtex download
  • CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083) RIS download Bibtex download
  • PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 (pp 397-400) RIS download Bibtex download
  • Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes (pp 339-342) RIS download Bibtex download
  • David JPR () Physics and design of low noise avalanche photodiodes. Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715) RIS download Bibtex download
  • David JPR, Ghin R, Plimmer SA, Rees GJ & Grey R () Temperature dependence of avalanche breakdown in GaAs p-i-n diodes. HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) RIS download Bibtex download
  • Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 μm modulation grown by solid source MBE. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) RIS download Bibtex download
  • Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials RIS download Bibtex download
  • Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () Strain effects in InAsP/InP MQW modulators for 1.06 μm operation. Seventh International Conference on Indium Phosphide and Related Materials RIS download Bibtex download
  • Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () Varying strains in InAs/sub 1-x/P/sub x//InP multiple quantum well device structures. 1993 (5th) International Conference on Indium Phosphide and Related Materials RIS download Bibtex download
  • Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () Photoconductivity of a strained InAs/InP superlattice in the 1.0-1.5 mu m region. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels RIS download Bibtex download
  • Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy. [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials RIS download Bibtex download

Preprints

  • Singh R, O'Farrell T, Bui TC, Biagi M & David JPR (2019) Performance Evaluation of Frequency Domain Equalisation Based Colour Shift Keying Modulation Schemes Over Diffuse Optical Wireless Channels, arXiv. RIS download Bibtex download
  • Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors, arXiv. RIS download Bibtex download
  • Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector, arXiv. RIS download Bibtex download
  • Gamel M, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David J & Jamaludin MZ () Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm, Research Square Platform LLC. RIS download Bibtex download
Professional activities and memberships
  • Departmental Director of Admissions
  • Departmental International Student Advisor
  • USIC Faculty Link Tutor
Research students
Student Degree Status Primary/Secondary
Cheong JS PhD Graduated Primary
Goh YL PhD Graduated Primary
Groves C PhD Graduated Primary
Hasbullah NF PhD Graduated  Primary
Hunter CJO PhD Graduated Primary
Ker PJ PhD Graduated Primary
Loh WS PhD Graduated Primary
Massey DJ PhD Graduated Primary
Richards RD PhD Graduated Primary
Singh R PhD Graduated Primary
Soong WM PhD Graduated Primary
Tan JJL PhD Graduated Primary
Tan SL PhD Graduated Primary
Vines P PhD Graduated Primary
Auckloo SMA PhD Graduated Secondary
Cao Y PhD Graduated  Secondary
Chen S PhD Graduated Secondary
Dimler SJ PhD Graduated Secondary
Green JE PhD Graduated Secondary
Greenwood PDL PhD Graduated  Secondary
Hobbs MJ PhD Graduated Secondary
Lei H PhD Graduated  Secondary
Li KF PhD Graduated  Secondary
Marshall ARJ PhD Graduated Secondary
Mohmad ARB PhD Graduated Secondary
Ong DSG PhD Graduated  Secondary
Ong SL PhD Graduated Secondary
Ray S PhD Graduated Secondary
White BS PhD Graduated Secondary
Zaitev A  PhD Graduated Secondary