Dr Elisa M Sala
Department of Electronic and Electrical Engineering
Research Fellow
Semiconductor Materials and Devices Research Group
+44 114 222 5212
Full contact details
Department of Electronic and Electrical Engineering
- Qualifications
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I graduated in Solid State Physics at the University of Milano-Bicocca (Italy) in 2012.
In 2018 I earned my PhD in Solid State Physics at the Technical University of Berlin (Germany), under the supervision of Prof. D. Bimberg, with a thesis entitled “Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories”.
- Research interests
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In year 2012 she carried out experimental training on MBE (Molecular Beam Epitaxy) growth and characterization of III-V semiconductor nanostructures at L-NESS, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (Como, Italy), as part of her master’s degree.
In 2013 she was enrolled in a PhD program within the project HOFUS (Hoch-Funktionale-Speicher – high functional memory architecture) in Bimberg’s group, funded by the German Ministry for Education and Research (BMBF), aiming to demonstrate the feasibility of a quantum-dot-based memory as a novel memory architecture (also named QD-Flash).
During her PhD research studies, she investigated the MOVPE (Metal Organic Vapor Phase Epitaxy) growth, the optical and morphological characterization of a novel type of III-V semiconductor quantum dots, and their use as storage unit for the QD-Flash.
Her investigations demonstrated that the QD capture cross-section can be engineered by a fine-tuning of the growth parameters, which led to the storage record of 1 hour at room temperature for MOVPE-grown QDs so far, thus paving the way for an ultimate QD-based nanomemory.
In July 2018 she joined the EPSRC National Epitaxy Facility of the University of Sheffield as Research Associate in MOVPE.
Here she is dealing with the epitaxy and the characterization of various III-V semiconductor materials, in particular arsenides and phosphides, with a special focus on quantum dots as building blocks for novel optoelectronic devices.
- Publications
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Journal articles
- Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity. Scientific Reports, 14(1). View this article in WRRO
- Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters. ACS Applied Nano Materials.
- Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer. Nanotechnology, 33(6).
- On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001). New Journal of Physics, 23.
- Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. Light: Science & Applications, 10(1).
- InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy. physica status solidi (RRL) – Rapid Research Letters, 14(8), 2000173-2000173.
- Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. Physical Review B, 100(19). View this article in WRRO
- MOVPE‐growth of InGaSb/AlP/GaP(001) quantum dots for nanoscale memory applications. physica status solidi (b), 255(12). View this article in WRRO
- Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001). Applied Physics Letters, 109(10). View this article in WRRO
- 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier. Applied Physics Letters, 106(4), 042102-042102.
- Ordered array of Ga droplets on GaAs(001) by local anodic oxidation. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 32(6). View this article in WRRO
- Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots. Applied Physics Letters, 104(12). View this article in WRRO
- Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. New Journal of Physics.
- Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications. physica status solidi (RRL) – Rapid Research Letters.
- Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in MOVPE. physica status solidi (RRL) – Rapid Research Letters.
Preprints
- On the importance of antimony for temporal evolution of emission from
self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001), arXiv.
- Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity. Scientific Reports, 14(1). View this article in WRRO