Dr Robert Airey
BSc, MSc, PhD
Department of Electronic and Electrical Engineering
Research Associate
Research Associate responsible for device processing, within the UK Engineering and Physical Science Research Council National Epitaxy Facility.
r.airey@sheffield.ac.uk
+44 114 222 5820
+44 114 222 5820
George Porter Building
Full contact details
Dr Robert Airey
Department of Electronic and Electrical Engineering
George Porter Building
Wheeldon Street
Sheffield
S3 7HQ
Department of Electronic and Electrical Engineering
George Porter Building
Wheeldon Street
Sheffield
S3 7HQ
- Profile
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B.Sc., 1988, Physical Electronics, University of Bradford. M.Sc., 1989, Medical Electronics, University of London. Ph.D., 1995, Physics, University of Cranfield for the thesis "Second-Harmonic generation in Langmuir-Blodgett films." Medical Physicist, Freeman Hospital, Newcastle upon Tyne. 1989-1991, Research into the effect prostate removal has on bladder control. Teaching Company Associate, University of Lancaster and Oxley Developments. 1995-1997, Development of microstructures using deep X-ray lithography. Research Assistant, Department of Electronic Engineering, University of Sheffield. 1997-1998, Fabrication and chracterisation of Vertical Cavity Surface Emitting Lasers (VCSELs). Research Associate, Department of Physics, University of Sheffield and the Medical Physics department at the Weston Park Hospital, Sheffield. 1998-2000, Development of CVD diamond as a radiation detector for use in radiotherapy.
- Publications
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Journal articles
- W line shape in the resistively detected nuclear magnetic resonance. Journal of Physics: Condensed Matter, 27(27).
- Gain spectrum measurement using the segmented contact method with an integrated optical amplifier. Journal of Applied Physics, 115(16), 163105-163105. View this article in WRRO
- Controlling radiative loss in quantum well solar cells. Journal of Physics D: Applied Physics, 46(26), 264007-264007.
- Electrical modulation of the optical properties of mid-infrared metamaterials. Applied Physics Letters, 101(25).
- Spin injection in n-type resonant tunneling diodes.. Nanoscale Res Lett, 7(1), 592-592. View this article in WRRO
- Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes. Semiconductor Science and Technology, 27(1).
- Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, 520(7), 3064-3070.
- Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter, 407(15), 2960-2963.
- Simulations of nanograting-assisted light coupling in GaN planar waveguide. Optical and Quantum Electronics, 42(9-10), 619-629.
- Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers. IEEE J SEL TOP QUANT, 17(5), 1334-1342.
- O-band excited state quantum dot bilayer lasers. Applied Physics Letters, 99(5), 051101-051101. View this article in WRRO
- Excited State Bilayer Quantum Dot Lasers at 1.3 µm. Japanese Journal of Applied Physics, 50(4S), 04DG10-04DG10.
- Excited State Bilayer Quantum Dot Lasers at 1.3 mu m. JPN J APPL PHYS, 50(4).
- Circular polarization in a non-magnetic resonant tunneling device. NANOSCALE RES LETT, 6. View this article in WRRO
- 1.52 [micro sign]m electroluminescence from GaAs-based quantum dot bilayers. Electronics Letters, 47(1), 44-44.
- Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films.
- Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes. Applied Physics Letters, 99(23).
- Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells. IEEE Journal of Photovoltaics.
- Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter.
- Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers. IEEE Journal on Selected Topics in Quantum Electronics.
- Bilayer for extending the wavelength of QD lasers. Journal of Physics: Conference Series, 245, 012083-012083.
- Using randomly distributed charges to create quantum dots. PHYS REV B, 81(3).
- In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region. IEEE Photonics Technology Letters, 21(14), 966-968.
- Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching. Journal of Electronic Materials, 38(5), 635-639.
- Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions.. Phys Rev Lett, 101(22), 226807.
- The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. J PHYS D APPL PHYS, 41(9).
- Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. J PHYS D APPL PHYS, 41(9).
- Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes. APPL PHYS LETT, 92(14).
- Fingerprints of spatial charge transfer in quantum cascade lasers. J APPL PHYS, 102(11).
- Magnetic field tuning of hot electron resonant capture in a semiconductor device. Applied Physics Letters, 91(14), 142104-142104.
- Tuning the photoresponse of quantum dot infrared photodetectors across the 8-12 mu m atmospheric window via rapid thermal annealing. APPL PHYS LETT, 91(14).
- Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. APPL PHYS LETT, 91(5).
- GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101(9), 093110-093110.
- InGaAs/AlAsSb/InP strain compensated quantum cascade lasers. APPL PHYS LETT, 90(15).
- InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 mu m. APPL PHYS LETT, 90(2).
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
- InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
- Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. APPL PHYS LETT, 89(8).
- 1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density. Electronics Letters, 42(16), 923-923.
- Intersubband spectroscopy of quantum cascade lasers under operating conditions. APPL PHYS LETT, 88(13).
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers. J APPL PHYS, 98(8).
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- InGaAs/AlAsSb quantum cascade lasers. APPL PHYS LETT, 85(18), 3992-3994.
- InGaAs-AlAsSb quantum cascade structures emitting at 3.1 mu m. ELECTRON LETT, 40(14), 874-875.
- lambda similar to 4-5.3 mu m intersubband emission from InGaAs-AlAsSb quantum cascade structures. APPL PHYS LETT, 84(9), 1447-1449.
- Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes. J APPL PHYS, 94(4), 2631-2637.
- Quantum cascade lasers grown by metalorganic vapor phase epitaxy. APPL PHYS LETT, 82(24), 4221-4223.
- Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates. J ELECTRON MATER, 32(5), 350-354.
- Tuneable optoelectronic bandpass filtering using a simple self-pulsating two-section laser. OPT EXPRESS, 11(2), 151-157.
- Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE T ELECTRON DEV, 49(12), 2349-2351. View this article in WRRO
- Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. ELECTRON LETT, 38(24), 1539-1541.
- Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. APPL PHYS LETT, 80(20), 3769-3771.
- Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors. J PHYS D APPL PHYS, 35(7), 595-598.
- Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. Applied Physics Letters, 80(20), 3769-3771.
- Dispersive line shape in the vicinity of theν=1quantum Hall state: Coexistence of Knight-shifted and unshifted resistively detected NMR responses. Physical Review B, 88(24).
- Classical percolation fingerprints in the high temperature regime of the quantum Hall effect. New Journal of Physics, 15(8), 083027-083027.
- Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. Physical Review B, 75(15).
- Magnetophonon oscillations in the negative differential conductance of dilute nitrideGaAs1−xNxsubmicron diodes. Physical Review B, 75(11).
- Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well. Physical Review B, 74(19).
Conference proceedings papers
- Quantum dot-based optically pumped VCSELs with high-contrast periodic gratings. 2019 24th Microoptics Conference (MOC), 17 November 2019 - 20 November 2019.
- Absorption and single-pass gain measurements in bilayer quantum dot laser structure. 2013 Saudi International Electronics, Communications and Photonics Conference, 27 April 2013 - 30 April 2013.
- Multiple quantum well top cells for multijunction concentrator solar cells. 2011 37th IEEE Photovoltaic Specialists Conference, 19 June 2011 - 24 June 2011.
- Strain engineered bilayers for extending the operating wavelength of quantum dot lasers. IET Optoelectronics, Vol. 5(3) (pp 100-104)
- Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7953
- The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247(7) (pp 1761-1763)
- Gain spectra analysis of bilayer quantum dot lasers beyond 1.3μm. 2010 Photonics Global Conference, 14 December 2010 - 16 December 2010.
- Towards 1.55 µm GaAs based lasers using quantum dot bilayers. 22nd IEEE International Semiconductor Laser Conference, 26 September 2010 - 30 September 2010.
- Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. JOURNAL OF CRYSTAL GROWTH, Vol. 311(10) (pp 2857-2859)
- Determination of the Landau level shape via the transition to the spin polarized state in the integer quantum Hall effect. Physica E: Low-dimensional Systems and Nanostructures, Vol. 40(5) (pp 1200-1201)
- Hot carriers in strain balanced quantum well solar cells. 2008 33rd IEEE Photovolatic Specialists Conference, 11 May 2008 - 16 May 2008.
- Short-wavelength quantum cascade lasers - art. no. 69090V. NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, Vol. 6909 (pp V9090-V9090)
- Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 689-694)
- Magnetic-field-induced Stoner transition in a quantum Hall ferromagnet at high filling factors. AIP Conference Proceedings
- Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure. 2007 Conference on Lasers and Electro-Optics (CLEO), 6 May 2007 - 11 May 2007.
- InGaAs-AlAsSb Quantum Cascade Lasers: Towards 3 mu m Emission. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 492-493)
- Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
- Improved AIN buffer layer technologies for UV-LEDs. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 1, Vol. 4(1) (pp 120-124)
- Efficiency Enhancement of Single Junction GAAS Solar Cells using Strain-Balanced Quantum Well Structures Under Concentration. 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 7 May 2006 - 12 May 2006.
- Dilute nitride-based 1.3μm high performance lasers. Semiconductor Lasers and Laser Dynamics II
- Probing the electronic and optical properties of quantum cascade lasers under operating conditions. Optical Methods in the Life Sciences, Vol. 6386 (pp U86-U93)
- InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
- InGaAs-AlAsSb-InP quantum cascade lasers: Performance and prospects. 2005 International Conference on Indium Phosphide and Related Materials (pp 76-77)
- Gated spin relaxation in (110)-oriented quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 23(3-4) (pp 309-314)
- Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors. JOURNAL OF ELECTRONIC MATERIALS, Vol. 33(5) (pp 400-407)
- MOVPE grown quantum cascade lasers. Physica E: Low-dimensional Systems and Nanostructures, Vol. 21(2-4) (pp 863-866)
- The effect of dielectric stress on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 130-135)
- GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. International Conference on Molecular Bean Epitaxy
- W line shape in the resistively detected nuclear magnetic resonance. Journal of Physics: Condensed Matter, 27(27).
- Professional activities and memberships
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- Chemical Vapour Deposition Epitaxy - Characterisation of CVD diamond using the thermally stimulated current technique. The development of an in-shoe sensor to measure the shear forces exerted on the foot whilst walking, with the aim to predict and identify areas on the sole of the foot that are likely to ulcerate.