Professor Chee Hing Tan
PhD, BEng
School of Electrical and Electronic Engineering
Professor of Opto-Electronic Sensors
Theme Lead for Materials and Devices
+44 114 222 5144
Full contact details
School of Electrical and Electronic Engineering
- Profile
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I started as an undergraduate at the School of Electrical and Electronic Enginering at The University of Sheffield in September 1996.
I was awarded a 1st class BEng in Electronic Engineering - Communications, and was fortunate to be given a full scholarship to pursue a PhD degree at EEE.
The PhD in Electronic Engineering significantly broadened my knowledge in Engineering and stimulated my desire to learn and research. In particular, I gained deep understanding of how optical and electronic device properties can be modified by carefully optimised semiconductor crystals.
The ability to select different atoms to be combined in new semiconductor materials has led to many breakthroughs in transistors, lasers, solar cell and detectors.
EEE has provided a wonderful environment for me to explore fundamental engineering questions, advance research to generate lasting impacts and to share my experience with students and researchers.
I have always felt at home because of the strong support from academics, when I was a student, and from colleagues across the department since I became an academic in 2003.
My career has progressed with great support from many great colleagues and students, whom I considered my “extended family”. The welcoming environment and strong research and teaching culture in EEE have helped to enrich my experience in work and in life.
In February 2019 I was appointed Head of Department for EEE, a position of responsibility which I took until Sept 2024. At present I am the Academic Line Manager for academics within the Semiconductor Materials and Devices. We are excited to continue the strong tradition of research and innovation in semiconductor technologies.
- Research interests
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- Avalanche photodiodes with electron-only ionisation for “noiseless” avalanche process (F<2) and extremely high gain-bandwidth product (>500 GHz).
- Design, modelling and characterisation of single photon avalanche diode (Si, GaAs, InAlAs, AlGaAsSb)
- High speed avalanche photodiodes for optical fiber communication, utilizing very thin avalanche region for improved excess noise and bandwidth (InP, InAlAs, AlGaAsSb lattice matched to InP)
- Novel multi-colour detectors for radiation thermometry
- High sensitivity detectors for infrared wavelengths bands NIR, SWIR, MWIR, LWIR and VLWIR
- Improving energy resolution of soft X-ray detection using avalanche photodiodes
- Publications
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Journal articles
- Low excess noise Al0.8In0.2As0.31Sb0.69 avalanche photodiodes lattice matched to InAs. IEEE Transactions on Electron Devices, 1-7. View this article in WRRO
- Sensitivity improvement of 2.5 Gb/s receivers using AlGaAsSb avalanche photodiodes. Applied Sciences, 15(22). View this article in WRRO
- InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. View this article in WRRO
- Room temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode. IEEE Photonics Journal, 17(2). View this article in WRRO
- High-performance room temperature 2.75 µm cutoff In0.22Ga0.78As0.19Sb0.81/Al0.9Ga0.1As0.08Sb0.92 avalanche photodiode. Optica, 11(12), 1632-1638. View this article in WRRO
- Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11(11), 4846-4853. View this article in WRRO
- An extremely low noise-equivalent power photoreceiver using high-gain InGaAs/AlGaAsSb APDs. Journal of Lightwave Technology. View this article in WRRO
- GaAsSb/AlGaAsSb avalanche photodiode with high gain-linearity. IEEE Transactions on Electron Devices, 71(10), 6161-6165. View this article in WRRO
- Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25). View this article in WRRO
- Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices, 71(5), 3039-3044. View this article in WRRO
- Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 71(3), 1994-1998. View this article in WRRO
- Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31(20), 33141-33149. View this article in WRRO
- Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1141. View this article in WRRO
- Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4). View this article in WRRO
Conference proceedings
- InGaAs/AlGaAsSb Avalanche Photodiodes with sub 100fW/√Hz noise equivlent power at 22 to 52 °C. Proceedings of 2025 IEEE 10th Optoelectronics Global Conference (OGC) (pp 121-125). Shenzhen, China, 9 September 2025 - 9 September 2025. View this article in WRRO
- Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Optical Components and Materials XXII (pp 34-34), 25 January 2025 - 31 January 2025.
- Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
- Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
- Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
Datasets
- Low excess noise Al0.8In0.2As0.31Sb0.69 avalanche photodiodes lattice matched to InAs. IEEE Transactions on Electron Devices, 1-7. View this article in WRRO
- Teaching activities
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- Teaching: EEE337, EEE348 and EEE6216
- Undergraduate tutoring and project supervision
- Professional activities and memberships
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- Senior Member of IEEE
- Co-founder of Phlux Technology