Professor Chee Hing Tan

PhD, BEng

School of Electrical and Electronic Engineering

Professor of Opto-Electronic Sensors

Theme Lead for Materials and Devices

c.h.tan@sheffield.ac.uk
+44 114 222 5144

Full contact details

Professor Chee Hing Tan
School of Electrical and Electronic Engineering

Profile: I started as an undergraduate at the School of Electrical and Electronic Enginering at The University of Sheffield in September 1996.

I was awarded a 1st class BEng in Electronic Engineering - Communications, and was fortunate to be given a full scholarship to pursue a PhD degree at EEE.

The PhD in Electronic Engineering significantly broadened my knowledge in Engineering and stimulated my desire to learn and research. In particular, I gained deep understanding of how optical and electronic device properties can be modified by carefully optimised semiconductor crystals.

The ability to select different atoms to be combined in new semiconductor materials has led to many breakthroughs in transistors, lasers, solar cell and detectors.

EEE has provided a wonderful environment for me to explore fundamental engineering questions, advance research to generate lasting impacts and to share my experience with students and researchers.

I have always felt at home because of the strong support from academics, when I was a student, and from colleagues across the department since I became an academic in 2003.

My career has progressed with great support from many great colleagues and students, whom I considered my “extended family”. The welcoming environment and strong research and teaching culture in EEE have helped to enrich my experience in work and in life.

In February 2019 I was appointed Head of Department for EEE, a position of responsibility which I took until Sept 2024. At present I am the Academic Line Manager for academics within the Semiconductor Materials and Devices. We are excited to continue the strong tradition of research and innovation in semiconductor technologies.

Qualifications

PhD (Electronic Engineering), University of Sheffield 2002
BEng (Electronic Engineering - Communications), University of Sheffield 1998

Research interests

Avalanche photodiodes with electron-only ionisation for “noiseless” avalanche process (F<2) and extremely high gain-bandwidth product (>500 GHz).
Design, modelling and characterisation of single photon avalanche diode (Si, GaAs, InAlAs, AlGaAsSb)
High speed avalanche photodiodes for optical fiber communication, utilizing very thin avalanche region for improved excess noise and bandwidth (InP, InAlAs, AlGaAsSb lattice matched to InP)
Novel multi-colour detectors for radiation thermometry
High sensitivity detectors for infrared wavelengths bands NIR, SWIR, MWIR, LWIR and VLWIR
Improving energy resolution of soft X-ray detection using avalanche photodiodes

Publications

Journal articles

Blain T, Veitch J, Shulyak V, Han IS, Hopkinson M, Ng JS & Tan CH (2025) InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. View this article in WRRO
Taylor-Mew J, Li L, Blain T, Tan CH & Ng JS (2025) Room temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode. IEEE Photonics Journal, 17(2). View this article in WRRO
Jin X, Zhao S, Craig AP, Tian Q, Gilder L, Yi X, Carmichael M, Golding T, Tan CH, Marshall ARJ & David JPR (2024) High-performance room temperature 2.75 µm cutoff In0.22Ga0.78As0.19Sb0.81/Al0.9Ga0.1As0.08Sb0.92 avalanche photodiode. Optica, 11(12), 1632-1638. View this article in WRRO
Tao X, Jin X, Gao S, Yi X, Liu Y, Rockett TBO, Bailey NJ, Harun F, Adham NA, Tan CH , Richards RD et al (2024) Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11(11), 4846-4853. View this article in WRRO
Sheridan B, Collins X, Taylor-Mew J, White B, Ng JS & Tan CH (2024) An extremely low noise-equivalent power photoreceiver using high-gain InGaAs/AlGaAsSb APDs. Journal of Lightwave Technology. View this article in WRRO
Cao Y, Blain T, Li L, Veitch JD, Collins XD, Ng JS & Tan CH (2024) GaAsSb/AlGaAsSb avalanche photodiode with high gain-linearity. IEEE Transactions on Electron Devices, 71(10), 6161-6165. View this article in WRRO
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25). View this article in WRRO
Blain T, Shulyak V, Han IS, Hopkinson M, Ng JS & Tan CH (2024) Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices, 71(5), 3039-3044. View this article in WRRO
Taylor-Mew J, Collins X, White B, Tan CH & Ng JS (2024) Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 71(3), 1994-1998. View this article in WRRO
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH & David JPR (2023) Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31(20), 33141-33149. View this article in WRRO
Hadfield RH, Leach J, Fleming F, Paul DJ, Tan CH, Ng JS, Henderson RK & Buller GS (2023) Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1141. View this article in WRRO
Gandan S, Pinel LLG, Morales JSD, Ng JS, Tan CH & Ochalski T (2023) Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4). View this article in WRRO
Cao Y, Blain T, Taylor-Mew JD, Li L, Ng JS & Tan CH (2023) Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122(5). View this article in WRRO
Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm. Materials Science in Semiconductor Processing, 153, 107135-107135.
Petticrew J, Ji Y, Han IS, White B, Evirgen A, Reverchon J-L, Hopkinson M, Tan CH & Ng JS (2023) Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38(2). View this article in WRRO
Osman T, Lim LW, Ng JS & Tan CH (2022) Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30(12), 21758-21758. View this article in WRRO
Taylor-Mew JD, Petticrew JD, Tan CH & Ng JS (2022) Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 30(11), 17946-17952. View this article in WRRO
Cao Y, Osman T, Clarke E, Patil PK, Ng JS & Tan CH (2022) A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology, 40(14), 4709-4713. View this article in WRRO
Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker DL, Tan CH , Ong DS et al (2022) Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 28(2: Optical Detectors), 1-8.
Taylor-Mew J, Shulyak V, White B, Tan CH & Ng JS (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33(20), 1155-1158. View this article in WRRO
Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12(1).
Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35(9). View this article in WRRO
Petticrew J, Dimler S, Tan CH & Ng JS (2020) Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology, 38(4), 961-965. View this article in WRRO
Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics, 13(10), 683-686. View this article in WRRO
Sharpe MK, Marko IP, Duffy DA, England J, Schneider E, Kesaria M, Fedorov V, Clarke E, Tan CH & Sweeney SJ (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 126(12). View this article in WRRO
Lim L, Tan CH, Ng J, Petticrew J & Krysa A (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37(10), 2375-2379. View this article in WRRO
Tan CH, Velichko A, Lim LW & Ng JS (2019) Few-photon detection using InAs avalanche photodiodes. Optics Express, 27(4), 5835-5842. View this article in WRRO
Hobbs M, Zhu C, Grainger M, Tan CH & Willmott J (2018) Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26(19), 24904-24916. View this article in WRRO
Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8(1). View this article in WRRO
Lu Q, Zhou X, Krysa A, Marshall A, Carrington P, Tan C-H & Krier A (2018) InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 degrees C. Solar Energy Materials and Solar Cells, 179, 334-338. View this article in WRRO
Baladés N, Sales DL, Herrera M, Tan CH, Liu Y, Richards RD & Molina SI (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM.. Nanoscale Research Letters, 13(1).
Pinel LLG, Dimler SJ, Zhou X, Abdullah S, Zhang S, Tan CH & Ng JS (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 26(3), 3568-3576. View this article in WRRO
Hobbs MJ, Grainger MP, Zhu C, Tan CH & Willmott JR (2018) Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26(3), 3188-3198. View this article in WRRO
Petticrew JD, Dimler SJ, Zhou X, Morrison AP, Tan CH & Ng JS (2018) Avalanche breakdown timing statistics for silicon single photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
Abdullah S, Tan CH, Zhou X, Zhang S, Pinel L & Ng JS (2017) Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25(26), 33610-33616. View this article in WRRO
Zhou X, Pinel L, Dimler S, Zhang S, Ng J & Tan C (2017) Thin GaAsSb diodes with low excess noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-5. View this article in WRRO
Zhou X, Tan CH, Zhang S, Moreno M, Xie S, Abdullah S & Ng JS (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4, 170071-170071. View this article in WRRO
Zhou X, White B, Meng X, Zhang S, Gutierrez M, Robbins M, Rojas LG, Nelms N, Tan CH & Ng JS (2017) Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25(3), 2818-2825. View this article in WRRO
Velichko AV, Kudrynskyi ZR, Di Paola DM, Makarovsky O, Kesaria M, Krier A, Sandall IC, Tan CH, Kovalyuk ZD & Patanè A (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18). View this article in WRRO
Xie S, Zhou X, Zhang S, Thomson DJ, Chen X, Reed GT, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24(21), 24242-24247. View this article in WRRO
Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) Avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 quaternary alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
Auckloo A, Cheong JS, Meng X, Tan CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
Meng X, Xie S, Zhou X, Calandri N, Sanzaro M, Tosi A, Tan CH & Ng JS (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.. Royal Society Open Science, 3(3). View this article in WRRO
Butera S, Vines P, Tan CH, Sandall I & Buller GS (2016) Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. Electronics Letters, 52(5), 385-386.
White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) High-Gain InAs Planar Avalanche Photodiodes. Journal of Lightwave Technology, 34(11). View this article in WRRO
Meng X, Zhou X, Zhang S, Lees J, Tan CH & Ng JS (2015) InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10(10). View this article in WRRO
White BS, Sandall IC, David JPR & Tan CH (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62(9), 2928-2932. View this article in WRRO
Xie S, Zhang S & Tan CH (2015) InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation. IEEE Photonics Technology Letters, 27(16), 1745-1748. View this article in WRRO
Zhou X, Meng X, Krysa AB, Willmott JR, Ng JS & Tan CH (2015) InAs Photodiodes for 3.43 mu(text)m Radiation Thermometry. IEEE Sensors Journal, 15(10), 5555-5560. View this article in WRRO
Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) InAs/GaSb Type-II Superlattice for Radiation Thermometry. IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
Velichko AV, Patanè A, Capizzi M, Sandall IC, Giubertoni D, Makarovsky O, Polimeni A, Krier A, Zhuang Q & Tan CH (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106(2).
Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
Ng JS, Meng X, Lees JE, Barnett A & Tan CH (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. View this article in WRRO
Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) Demonstration of InAsBi photoresponse beyond 3.5 μ m. Applied Physics Letters, 104(17).
Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9.
Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electron Devices, 61(3), 838-843.
Sandall IC, Zhang S & Tan CH (2013) Linear array of InAs APDs operating at 2 µm.. Opt Express, 21(22), 25780-25787.
Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
Xie J, Ng JS & Tan CH (2013) An InGaAs/AlAsSb avalanche photodiode with a small temperature coefficient of breakdown. IEEE Photonics Journal, 5(4).
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2013) Temperature dependence of impact ionization in InAs.. Opt Express, 21(7), 8630-8637.
Hobbs MJ, Tan CH & Willmott JR (2013) Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry. JOURNAL OF INSTRUMENTATION, 8.
Ker PJ, David JPR & Tan CH (2012) Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Optics Express, 20(28), 29568-29576.
Forsyth AJ, Jia C, Wu D, Tan CH, Dimler S, Yang Y & Bailey W (2012) Cryogenic converter for superconducting coil control. Iet Power Electronics, 5(6), 739-746.
Xie J, Xie S, Tozer RC & Tan CH (2012) Excess noise characteristics of thin AlAsSb APDs. IEEE Transactions on Electron Devices, 59(5), 1475-1479.
Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452.
Sandall I, Tan CH, Smith A & Gwilliam R (2012) Planar InAs photodiodes fabricated using He ion implantation. Optics Express, 20(8), 8575-8583.
Hong BH, Rybchenko SI, Itskevich IE, Haywood SK, Tan CH, Vines P & Hugues M (2012) Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Journal of Applied Physics, 111(3).
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067.
Zhou X, Ng S & Tan H (2012) A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(8).
Tan CH, Xie S & Xie J (2012) Low noise avalanche photodiodes incorporating a 40 nm ALASSB avalanche region. IEEE Journal of Quantum Electronics, 48(1), 36-41.
Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 310-313.
Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
Wahra A, Tan CH, Xie J, Vines P & Beanland R (2011) Three-dimensional measurement of composition changes in InAs/GaAs quantum dots. Journal of Physics Conference Series, 326(1).
Sandall IC, Xie S, Xie J & Tan CH (2011) High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.. Opt Lett, 36(21), 4287-4289.
Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.. Opt Express, 19(23), 23341-23349.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH, Babazadeh N & Gomes RB (2011) The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Xie SY & Tan CH (2011) AlAsSb Avalanche Photodiodes with a Sub-mV/K Temperature Coefficient of Breakdown Voltage. IEEE J QUANTUM ELECT, 47(11), 1391-1395.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE J QUANTUM ELECT, 47(8), 1123-1128.
Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE J QUANTUM ELECT, 47(6), 858-864.
Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors. Infrared Physics and Technology, 54(3), 228-232.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods. IEEE J QUANTUM ELECT, 47(5), 607-613.
Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47(2), 190-197.
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomes RB (2010) Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomez RB (2010) Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Marshall ARJ, David JPR & Tan CH (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57(10), 2631-2638.
Hong BH, Rybchenko SI, Itskevich IE, Haywood SK, Tan CH, Vines P & Hugues M (2010) Modeling of intraband absorption for quantum dot-in-well structures with low computational cost. Journal of Physics Conference Series, 242.
Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571.
Helme JP, Houston PA & Tan CH (2009) Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s. IEEE J QUANTUM ELECT, 45(7), 833-839.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE PHOTONIC TECH L, 21(13), 866-868.
Tan LJJ, Ng JS, Tan CH & David JPR (2008) Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. APPL PHYS LETT, 93(11).
Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. J APPL PHYS, 104(1).
David JPR & Tan CH (2008) Material considerations for avalanche photodiodes (Invited paper). IEEE J SEL TOP QUANT, 14(4), 998-1009.
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
Tan CH, Ng JS, Rees GJ & David JPR (2007) Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Ng JS, Tan CH, Rees GJ & David JPR (2007) Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end. MEAS SCI TECHNOL, 17(7), 1941-1946.
Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414.
Ng JS, Tan CH, David JPR & Rees GJ (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE T ELECTRON DEV, 52(7), 1527-1534.
Ng WK, Tan CH, Houston PA & Krysa A (2005) High current InP/InGaAs evanescently coupled waveguide phototransistor. IEE P-OPTOELECTRON, 152(2), 140-144.
Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) Impact ionization in submicron silicon devices. J APPL PHYS, 95(10), 5931-5933.
Ng WK, Tan CH, Houston PA, Krysa A & Tahraoui A (2004) Surface passivation of InP/InGaAs heterojunction bipolar transistors. SEMICOND SCI TECH, 19(6), 720-724.
Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. Journal of Modern Optics, 51(9-10), 1315-1321.
Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE T ELECTRON DEV, 50(10), 2021-2026.
Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905.
Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function. J LIGHTWAVE TECHNOL, 21(1), 155-159.
Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.

Conference proceedings

Yi X, Jin X, Liang BL, Lewis H, Tian Q, Tan CH, Xie S, Li Q, Yan Z, Buller G & David JPR (2025) Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Optical Components and Materials XXII (pp 34-34), 25 January 2025 - 31 January 2025.
Blain T, Basta G, Tan CH & Ng JS (2024) Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
Collins X, Sheridan BS, Price DM, Cao Y, Blain T, Ng JS, Tan CH & White BS (2023) Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. Optical Components and Materials XX, Vol. 12417 (pp 124170k-124170k). San Francisco, California, United States, 28 January 2023 - 28 January 2023. View this article in WRRO
Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. Optical Components and Materials XIX (pp 19-19), 22 January 2022 - 28 February 2022.
Collins X, White B, Cao Y, Osman T, Taylor-Mew J, Ng JS & Tan CH (2022) Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. Optical Components and Materials XIX, Vol. 11997 (pp 1199709). San Francisco, California, United States, 22 January 2022 - 22 January 2022. View this article in WRRO
Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III (pp 18-18), 21 September 2020 - 25 September 2020.
Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation). Optical Components and Materials XVII (pp 13-13), 1 February 2020 - 6 February 2020.
Ng JS & Tan CH (2018) AlGaAsSb avalanche photodiodes. 2018 IEEE Photonics Conference (IPC). Reston, VA, USA, 30 September 2018 - 30 September 2018. View this article in WRRO
Pinel LLG, Tan CH & Ng JS (2018) Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, Vol. 10729 (pp 107290O). San Diego, California, United States, 19 August 2018 - 19 August 2018. View this article in WRRO
Zhang S, Abdullah S, Tan CH & Ng JS (2018) Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, Vol. 10729 (pp 107290f). San Diego, California, United State, 19 August 2018 - 19 August 2018. View this article in WRRO
Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Proceedings, Advanced Photon Counting Techniques XI, Vol. 10212. California, United States, 9 April 2017 - 9 April 2017. View this article in WRRO
Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988. Edinburgh View this article in WRRO
Zhou X, Xie S, Zhang S, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (pp 1-2), 26 June 2016 - 30 June 2016.
Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al<inf>0.85</inf>Ga<inf>0.15</inf>As<inf>0.56</inf>Sb<inf>0.44</inf> APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (pp 1-2), 26 June 2016 - 30 June 2016.
Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. Photonics (ICP), 2016 IEEE 6th International Conference on. Sarawak, Malaysia, 14 March 2016 - 14 March 2016. View this article in WRRO
Tan CH, Sandall IC, Zhou X & Krishna S (2016) InAs-QDIP hybrid broadband infrared photodetector. MRS Advances, Vol. 1(48) (pp 3301-3306)
Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al_0.85Ga_0.15As_0.56Sb_0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
White BS, Sandall IC & Chee Hing Tan (2015) Planar InAs avalanche photodiodes. 2015 IEEE Photonics Conference (IPC) (pp 454-455), 4 October 2015 - 8 October 2015.
Zhou X, Ng JS & Tan CH (2015) In As photodiode for low temperature sensing. SPIE Proceedings, Vol. 9639. Bellingham View this article in WRRO
Sandall I, White B & Chee Hing Tan (2014) InAs APD with solid state photomultiplier characteristics. 2014 IEEE Photonics Conference (pp 354-355), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference (pp 356-357), 12 October 2014 - 16 October 2014.
White BS, Sandall I & Chee Hing Tan (2014) Planar InAs p-i-n photodiodes fabricated using ion implantation. 2014 IEEE Photonics Conference (pp 352-353), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) Demonstration of an InAsBi photodiode operating in the MWIR. SPIE Proceedings
Auckloo A, Tozer R, David J & Tan CH (2014) A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) (pp 590-593), 7 December 2014 - 10 December 2014.
Ker PJ, Tan CH & David JPR (2013) High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics Icp 2013 Conference Proceeding (pp 78-80)
Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Sandall I, Tan CH, Smith A & Gwilliam R (2012) Planar InAs photodiodes fabricated using He ion implantation. 2012 IEEE Photonics Conference IPC 2012 (pp 165-166)
Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference IPC 2012 (pp 167-168)
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest 2012 17th Opto Electronics and Communications Conference Oecc 2012 (pp 220-221)
Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 31-32)
Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 276-277)
Tan CH, Xie S & Xie J (2011) Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors. IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 278-279)
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 706-707)
Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7838
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 421-424)
Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 409-412)
Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 187-190)
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7681
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. SPIE Proceedings, Vol. 7355 (pp 73550Z-73550Z)
Marshall ARJ, Tan CH & David JPR (2009) The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7320
Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS (pp 296-297)
Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference Conference Digest Drc (pp 79-80)
Houston PA, Helme J, Ng WK & Tan CH (2004) InP/InGaAs heterojunction phototransitors for optoelectronic receivers. 2004 IEEE International Conference on Semiconductor Electronics, Proceedings (pp A1-A5)
Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3953 (pp 95-102)
Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO (pp 230-235)
Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 295-298)

Patents

Tan CH () Ultra Low Noise InAs Avalanche Photodiodes. GB0723858.7 (UK). Appl. 01 Jan 1970.
Tan CH () High Gain-Bandwidth Product Avalanche Photodiode. (UK). Appl. 01 Jan 1970.

Software, code or databases

Petticrew J, Dimler S, Tan C & Ng J Software for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.

Datasets

Petticrew J, Dimler S, Tan C & Ng J Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
Tan C, Velychko A, Lim L & Ng J Few-photon detection using InAs avalanche photodiodes.
Abdullah S, Tan C, Ng J, Zhou X, Zhang S & Guerrero MM Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.
Tan C, Ng J, Zhang S, Zhou X, Pinel L & Dimler S Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise.

Other

Petticrew JD, Dimler SJ, Tan CH & Ng JS (2020) Modeling Temperature Dependent Avalanche Characteristics of InP (vol 38, pg 961, 2020). JOURNAL OF LIGHTWAVE TECHNOLOGY, 38(15), 4183-4183.
Tan PCH (2016) Guest Editorial: Selected Papers from the 29th Semiconductor and Integrated OptoElectronics (SIOE), 2015. IET Optoelectronics, 10(2), 33-33.
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum. Optics Express, 22(21), 25923-25923.
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum.. Opt Express, 22(21), 25923.
Lee KS, Prasad PN, Huyet G & Tan CH (2012) Feature issue introduction: Quantum dots for photonic applications. Optics Express, 20(10), 10721-10723.

Research group: Materials and Devices

Teaching activities

Teaching: EEE337, EEE348 and EEE6216
Undergraduate tutoring and project supervision

Professional activities and memberships

Senior Member of IEEE
Co-founder of Phlux Technology

Research students

Student	Degree	Status	Primary/Secondary
Das S D	PhD	Graduated	Primary
Gomes R B	PhD	Graduated	Primary
Hobbs M J	PhD	Graduated	Primary
Idris A S	PhD	Graduated	Primary
Liew Tat Mun S	PhD	Graduated	Primary
Marshall A R J	PhD	Graduated	Primary
Moreno Guerrero M A	MPhil	Graduated	Primary
Rowe M	MPhil	Graduated	Primary
White B S	PhD	Graduated	Primary
Xie J	PhD	Graduated	Primary
Xie S	PhD	Graduated	Primary
Zhou X	PhD	Graduated	Primary
GoH Y L	PhD	Graduated	Secondary
Goldberg G R	PhD	Graduated	Secondary
Ker P	PhD	Graduated	Secondary
Meng X	PhD	Graduated	Secondary
Tan S	PhD	Graduated	Secondary

School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor Chee Hing Tan

Journal articles

Conference proceedings

Patents

Software, code or databases

Datasets

Other

Links